Specific emitter identification for satellite communication using probabilistic neural networks

Electromagnetic signal emitted by satellite communication (satcom) transmitters are used to identify specific individual uplink satcom terminals sharing the common transponder in real environment, which is known as specific emitter identification (SEI) that allows for early indications and warning (I&W) of the targets carrying satcom furnishment and furthermore the real time electromagnetic situation awareness in military operations. In this paper, the authors are the first to propose the identification of specific transmitters of satcom by using probabilistic neural networks (PNN) to reach the goal of target recognition. We have been devoted to the examination by exploring the feasibility of utilizing the Hilbert transform to signal preprocessing, applying the discrete wavelet transform to feature extraction, and employing the PNN to perform the classification of stationary signals. There are a total of 1000 sampling time series with binary phase shift keying (BPSK) modulation originated by five types of satcom transmitters in the test. The established PNNs classifier implements the data testing and finally yields satisfactory accuracy at 8 dB(±1 dB) carrier to noise ratio, which indicates the feasibility of our method, and even the keen insight of its application in military.     

一种高性能的新结构IGBT

提出了一种低功率损耗的新结构IGBT.该新结构的创新点在于其复合耐压层结构,该耐压层包括深扩散形成的n型缓冲层和硼注入形成的透明背发射区两部分.虽然在正常工作条件下,该新结构IGBT工作于穿通状态,但器件仍具有非穿通IGBT(NPT-IGBT)的优良特性.该新结构IGBT具有比NPT-IGBT更薄的芯片厚度,从而可以获得更好的通态压降和关断功耗之间的折衷.实验结果表明:与NPT-IGBT相比较,新结构IGBT的功率损耗降低了40%.     

Effect of epitaxial realignment on the leakage behavior of arsenic-implanted,as-deposited polycrystalline Si-on-single crystal Si diodes

When dopants are indiffused from a heavily implanted polycrystalline silicon film deposited on a silicon substrate, high thermal budget annealing can cause the interfacial “native” oxide at the polycrystalline silicon-single crystal silicon interface to break up into oxide clusters, causing epitaxial realignment of the polycrystalline silicon layer with respect to the silicon substrate. Anomalous transient enhanced diffusion occurs during epitaxial realignment and this has adverse effects on the leakage characteristics of the shallow junctions formed in the silicon substrate using this technique. The degradation in the leakage current is mainly due to increased generation-recombination in the depletion region because of defect injection from the interface.     

热场致发射电子源曝光系统的技术现状和应用前景

高亮度、长寿命的热场致发射(Thermal field emitter)阴极自七十年代中期已受到人们的关注和重视,历经十多年在理论分析、工艺制备和实验研究上做了大量工作之后,于1988年在电子束曝光机上的应用中取得了突破性进展。用晶向为(100)的钨和具有低逸出功的锆制成的(Zr/O/W)热场致发射阴极在四千小时的使用寿命下亮度值超过六硼化镧阴极一个数量级以上,最近的实验结果表明:在工件台上小束斑下能得到接近两千安培每平方厘米的束流密度,而且四十小时内束流稳定度接近千分之一。显然,这几个表征曝光系统综合技术性能的重要指标,说明多年困扰于各种电子束曝光系统(特别是高斯圆斑电子束系统)在高分辨率情况下生产率较低的技术难题已经得到了比较圆满的解决。 八十年代末期,当热场致发射电子源曝光系统的技术关键解决后,这项技术就成为技术发达国家,特别是美国和日本,在电子束曝光领域进行技术竞争的热点;九一年五月底在美国召开的国际三束会议上有关场致发射阴极和MEBES—4型机已经采用TFE的最新报道充分证实了这项技术在电子束曝光技术应用中的重要地位和发展潜力。     

基于多学习单元卷积神经网络的雷达辐射源信号识别

现有基于人工提取特征的复杂体制雷达辐射源信号识别方法时效性低,识别准确率不佳. 为此,提出了一种基于多学习单元卷积神经网络的识别方法. 首先对辐射源信号的模糊函数进行高斯平滑,以校正噪声带来的毛刺与畸变;然后提取其正交切片作为进一步的特征提取对象;最后构建多学习单元卷积神经网络,学习和提取正交切片深层、泛在的特征,并通过softmax分类器进行分类识别. 仿真实验结果表明,所提方法在信噪比为-2 dB时对6类典型雷达信号的整体平均识别率均保持在99.86%以上,即便是在-6 dB环境中,雷达信号的识别率也可达到88.50%,在极低信噪比条件下具有良好的性能和可行性.     

复杂体制雷达辐射源信号特征的集对分析

为解决复杂体制雷达辐射源信号特征的评价问题,提出了基于集对分析理论的复杂体制雷达辐射源信号特征分析模型.首先对复杂体制雷达辐射源信号特征评价指标体系的指标权重作层次分析,再通过集对分析理论对复杂体制雷达辐射源信号特征评估的决策矩阵进行同一度分析,最后联合指标权重矩阵和决策同一度矩阵对复杂体制雷达辐射源信号特征进行综合评判.仿真结果表明,该模型是有效、可行的,能够更好地实现对复杂体制雷达辐射源信号特征的分析和评估.     

Self-aligned fabrication of single crystal diamond gated field emitter array

This paper describes a self-aligned fabrication process for diamond gated field emitter array (FEA). Utilizing the non-conformal coverage sputtering conditions of silicon oxide, an interesting “sphere on cone” structure is formed on diamond nano tip array, which is the key point of gate hole opening process. This structure causes shadowing at certain regions of side-wall during Ti / Au gate metal deposition. Removal of “sphere” by wet etching leads to the successful fabrication of a single crystalline diamond gated FEA. Scanning electron microscope observations reveal the fabrication of a uniform emitter array with tip radius of curvature (20 nm) and gate hole (1.4 μm). We also confirmed that no noticeable physical damage exists on tip. In field emission characteristics of the fabricated single crystal diamond gated FEA, gate voltage control of field emission current is realized.     

红外光通信装置的设计与实现

介绍2013年大学生电子设计竞赛F题红外光通信装置的设计与实现。整个系统采用两个LM567（PLL）音频锁相环集成电路来完成红外光通信,性价比高,结构简单。     

黄河水滴灌系统灌水器结构-泥沙淤积-堵塞行为的相关关系研究

传统的黄河水沉淀-过滤系统存在沉沙池建设成本高、过滤器频繁反冲洗能耗高等问题,让更多的细颗粒泥沙随水流排出灌水器体外是解决黄河水滴灌系统灌水器堵塞的新思路,而摸清泥沙在黄河水滴灌系统内部的淤积特性以及灌水器结构-淤积泥沙特性-堵塞特性参数间的相关关系是探索其排沙能力的前提和基础。为此,本文在河套灌区开展了黄河水滴灌系统灌水器堵塞原位试验,系统分析了6种内镶贴片式灌水器内部细颗粒泥沙含量及粒径分布动态变化特征,探索了三者间的级联关系。结果表明：进入灌水器内部的泥沙99%以上可以排出体外,淤积在灌水器内部的泥沙以粉粒为主、砂粒次之、黏粒最少。随着灌水器堵塞加剧,内部淤积泥沙的黏粒、粉粒比例相对降低,而砂粒比例相对增加,泥沙进入灌水器后存在聚集等行为,使得灌水器内部淤积泥沙粒径明显高于毛管入口。泥沙比表面积淤积量、粉粒比例、砂粒比例、D₅₀、D₉₅对黄河水滴灌系统Dra、克里斯琴森均匀系数CU影响显著（p<0.05）,不同灌水器淤积泥沙粒径明显不同,D₅₀与灌水器结构无量纲参数（流道宽深比W/D、面积长度比A^1/2/L）及断面平均流速v显著（p<0.05）相关。本研究对引黄滴灌灌水器设计及灌溉系统过滤配置具有指导意义。     

雷达辐射源识别技术研究进展

雷达辐射源识别技术是雷达对抗侦察系统中的关键技术之一,是雷达对抗信息处理研究的重要内容。鉴于特征提取和分类识别是雷达辐射源识别的两大关键技术,综述了这两个关键技术的研究进展,从理论上分析了当前研究现状下存在的问题,并对未来的研究进行了展望,为进一步研究雷达辐射源识别技术提供了参考。