The Effect of Aluminum Ions on the DC Etching of Aluminum Foil

A study has been made of the electrochemical etching of 99.99% aluminum foils at a current density of 50 mA cm^–2in AlCl₃–HCl solutions (1 m Cl^–) at 80 °C. The solutions were made by dissolving metallic aluminum into 1m HCl solution, to give a Cl^– concentration of 1 m. The number density of etch tunnels and the homogeneity of tunnel length decreased, and the mean pit size and its standard deviation increased with increasing Al³⁺ concentration. The results were discussed based on potential transients at a current density of 50 mA cm^–2, current–potential curves at a scan rate of 10 m Vs^–1 and electrochemical impedance spectra.     

等离子硅刻蚀及其工艺参数的多尺度优化

用CFD-ACE+和CFD-TOPO分别对容性耦合等离子体反应腔室放电和等离子硅刻蚀过程进行仿真,讨论不同射频电压和腔室条件对等离子体特性的影响.结果表明:随着射频电压的升高,离子的通量增大;在低射频电压时,离子通量随腔室压强的升高而减小,而在高射频电压时趋势则相反.用Kriging模型对影响刻蚀形貌的参数(腔室压强和射频电压)进行优化,结果表明该优化方法可以为工艺条件相近的刻蚀机设备的设计提供参考.     

Low-Cost,High-Speed Domain Refinement without Damage to Insulative Coatings

Rolling large- diameter hardened steel balls over the surface of high- permeability grain- oriented electri-cal steel allows lines of plastic deformation to be laid down. Choice of proper Young’s modulus and ball diameter enables artificial grain boundaries to be created, producing appropriate domain refinement and loss reduction.     

高纯度纳米碳管的低温合成

以甲醇为碳源，在负载于CaO上的Co催化剂的催化作用下，利用微波等离子体化学气相沉积法低温合成了较高纯度的纳米碳管。经分析认为，等离子体中因甲醇裂解产生的氧离子及含氧基团对无定形碳具有很强的选择性刻蚀能力，为低温合成纳米碳管时提高其纯度创造了条件。     

浅析余热锅炉循环水加药处理

转炉烟道冷却壁经常开裂 ,据分析 ,开裂的主要原因为 :水质、水处理系统及其运行过程中在锅炉系统的内部产生点蚀及局部结垢后 ,部位具有较高的热阻 ,锅炉管外壁温度不均匀 ;同时 ,冷却壁急冷急热现象频繁 ,容易在冷却壁的最薄弱处产生裂纹。处理方式为在锅炉系统中增设加药计量泵 ,连续定量加入除氧缓蚀剂及阻垢剂 ,避免锅炉管内结垢及产生点蚀 ,进而避免了锅炉管外壁温度不均匀现象的产生 ,从根本上解决了烟道冷却壁经常开裂的问题     

低功率刻蚀工艺均匀度研究

在二氧化硅刻蚀工艺中,有时为了控制氧化膜的损伤,需要采用低功率刻蚀工艺。文中研究了在低射频功率条件下,通过改变磁场强度、暖机条件及反应气体的组成,对刻蚀均匀度的影响。实验结果表明,在低功率条件下,改变磁场强度和暖机条件对刻蚀均匀度的改变有限,但当向主刻蚀气体中加入氧气后,能较大程度地改变刻蚀均匀度。     

4H-SiC无线无源高温压力传感器设计

高温压力传感器研制的主要目的是解决高温恶劣环境下的压力测量问题,SiC是制造高温压力传感器的理想材料,结合薄膜技术与陶瓷厚膜技术,提出了一种新型的4H-SiC无线无源电容式高温压力传感器设计方案。应用Ansys有限元分析软件进行仿真,600℃时灵敏度为2.65 MHz/bar,说明传感器在高温下具有较高的灵敏度,对制备过程中的关键工艺——SiC深刻蚀进行了验证,刻蚀深度达到124μm,满足传感器制备要求。     

利用ICP设备制备图形化蓝宝石基底的工艺控制

该文对利用感应耦合等离子体(ICP)刻蚀设备来制作图形化蓝宝石基底(PSS)的工艺控制进行了研究。在工艺制作过程中,选用了C轴(0001)取向的100 mm蓝宝石平片作为实验样品,通过光刻工艺和ICP刻蚀工艺控制,制作出了具有圆锥状图形结构的图形化蓝宝石基底。借助扫描电子显微镜,对该图形化蓝宝石基底进行了测量和分析。测量结果显示,基底表面上的单粒圆锥状图形结构的底部直径为(3.45±0.25) μm,刻蚀高度/深度为(1.75±0.25) μm,整个图形化蓝宝石基底成品片的均匀性控制在3%以内。     

Challenges for plasma etch integration of ferroelectric capacitors in FeRAM's and DRAM's

Abstract

The plasma etch process requirements are different for etching 2μm ferroelectric capacitor structures in FeRAM's (SRAM) vs. the smaller capacitor sizes (0.2–0.5 μm) of DRAM's. Plasma etch integration of ferroelectric capacitors presents three major differences between FeRAM's and DRAM's. The first difference is in the ferroelectric capacitor structure. FeRAM's use planar capacitors with top side metal contacts to vias while DRAM's use vertical capacitor structures with bottom side contact to a poly post structure. The second major difference is in material selected and thickness of layers. FeRAM's use thicker electrodes of Pt or Ir and a thicker PZT or Y1 dielectric layer. FeRAM's use a thick bottom electrode (and a thin top electrode) consisting of Pt, Ru or Ir and a thin BST dielectric layer. The third major difference is the plasma etch process requirements for the two devices. FeRAM's require a clean etch process and no corrosion. Profile is not critical but should be maintained at greater than 60° for 2μm bottom post electrode. An HRe^? (Highly Density Reflected Electron) etch system is used to develop process trends for ferroelectric capacitor applications.     

SF6/O2气氛中SiC ICP刻蚀的微沟槽效应

本文采用SF6 + O2作为刻蚀气体,对单晶6H-SiC 材料的感应耦合等离子体( ICP) 刻蚀工艺进行了研究。着重分析了ICP 功率、偏置电压、气体混合比等工艺参数对微沟槽效应的影响。结果表明,O2的加入对于微沟槽的形成起到了极其重要的作用,微沟槽是加入氧气后形成的SiFxOy中间层的充电造成的。ICP功率与偏置电压的增大会增强微沟槽效应,进一步促进微沟槽的形成,另外入射离子的角度分布也会影响微沟槽的形成.