The initial behaviour of freshly etched copper in moderately acid, aerated chloride solutions

When freshly etched samples of various types of copper were exposed in moderately acid, aerated chloride solutions, two phenomena were observed. First the corrosion potential and the pH of the solution decreased over a shorter time, then the potential increased over a long period (600-1500 min), following an s-shaped pattern. Increase in pH during the second stage was avoided using a pH-stat. The corrosion rate increased little or not at all over the entire period. A tentative interpretation of the short-term behaviour is presented with some reservation. The long-term development of the potential suggests phase formation or transformation following the Avrami pattern. By suitable derivations it was possible to fit the development of potentials to the Avrami equation. Subsequent examinations by Auger spectroscopy proved the presence of thin layers of Cu₂O on the copper surfaces, increasing in thickness with exposure time. The dissolution kinetics can be described in terms of two parallel electrochemical reactions and a simultaneous non-electrochemical dissolution reaction.     

Back‐channel‐etched thin‐film transistor using c‐axis‐aligned crystal In–Ga–Zn oxide

Our crystalline In–Ga–Zn oxide (IGZO) thin film has a c‐axis‐aligned crystal (CAAC) structure and maintains crystallinity even on an amorphous base layer. Although the crystal has c‐axis alignment, its a‐axis and b‐axis have random arrangement; moreover, a clear grain boundary is not observed. We fabricated a back‐channel‐etched thin‐film transistor (TFT) using the CAAC‐IGZO film. Using the CAAC‐IGZO film, more stable TFT characteristics, even with a short channel length, can be obtained, and the instability of the back channel, which is one of the biggest problems of IGZO TFTs, is solved. As a result, we improved the process of manufacturing back‐channel‐etched TFTs.     

一种新的激光刻蚀字符的识别方法

通过对铭牌字符结构特征和字符之间相对关系的分析,提出基于神经网络和隐马尔可夫模型的激光刻蚀字符的识别方法。提取字符图像中的端点、三叉点和四叉点,对传统三叉点的提取方法进行改进,并利用神经网络的方法计算出对应每个字符的概率值,再根据隐马尔可夫模型计算出状态转移的最大似然,从而识别整个字符串。实验表明上述方法适用于激光刻蚀铭牌字符的识别。     

Development of flexible displays using back‐channel‐etched In–Sn–Zn–O thin‐film transistors and air‐stable inverted organic light‐emitting diodes

We developed flexible displays using back‐channel‐etched In–Sn–Zn–O (ITZO) thin‐film transistors (TFTs) and air‐stable inverted organic light‐emitting diodes (iOLEDs). The TFTs fabricated on a polyimide film exhibited high mobility (32.9 cm²/Vs) and stability by utilization of a solution‐processed organic passivation layer. ITZO was also used as an electron injection layer (EIL) in the iOLEDs instead of conventional air‐sensitive materials. The iOLED with ITZO as an EIL exhibited higher efficiency and a lower driving voltage than that of conventional iOLEDs. Our approach of the simultaneous formation of ITZO film as both of a channel layer in TFTs and of an EIL in iOLEDs offers simple fabrication process.     

Effect of temperature and α-irradiation on gas permeability for polymeric membrane

In the present study the polyethersulphone (PES) membranes of thickness (35 ±2) μm were prepared by solution cast method. The permeability of these membranes was calculated by varying the temperature and by irradiation of α ions. For the variation of temperature, the gas permeation cell was dipped in a constant temperature water bath in the temperature range from 303–373 K, which is well below the glass transition temperature (498 K). The permeability of H₂ and CO₂ increased with increasing temperature. The PES membrane was exposed by a-source (₉₅Am₂₄₁) of strength (1 μ Ci) in vacuum of the order of 10⁻⁶ torr, with fluence 2.7 × 10⁷ ions/cm². The permeability of H₂ and CO₂ has been observed for irradiated membrane with increasing etching time. The permeability increases with increasing etching time for both gases. There was a sudden change in permeability for both the gases when observed at 18 min etching. At this stage the tracks are visible with optical instrument, which confirms that the pores are generated. Most of pores seen in the micrograph are circular cross-section ones.     

甘油浓度对高压腐蚀箔的性能影响

甘油作为缓蚀剂对铝电解电容器阳极腐蚀铝箔孔洞的生长有显著的抑制效果,随甘油浓度增加,孔洞长度和数目减少,孔洞均匀性明显改善,腐蚀箔的比电容先增大后减少。当甘油浓度为0.5 g/L时腐蚀箔的比电容达到最大值0.776μF/cm2。     

基于SOI材料的刻蚀光栅分波器的制作工艺

研究了基于绝缘材料上的硅（SOI）材料的平面波导刻蚀光栅分波器的主要制作工艺．利用电感耦合等离子体刻蚀（ICP）技术，在SOI材料上制作了垂直度大于89°的光滑的光栅槽面．氧化抛光后刻蚀侧壁的表面均方根粗糙度（RMS）有3nm的改善，达到7.27nm（采样面积6.2μm×26μm）．通过采用集成波导拐弯微镜代替弯曲波导使1×4分波器的器件尺寸仅为20mm×2.5mm．测试结果表明器件实现了分波功能．     

Smooth and Vertical Facet Formation for AlGaN-Based Deep-UV Laser Diodes

Using a two-step method of plasma and wet chemical etching, we demonstrate smooth, vertical facets for use in Al _x Ga_1−x N-based deep-ultraviolet laser-diode heterostructures where x = 0 to 0.5. Optimization of plasma-etching conditions included increasing both temperature and radiofrequency (RF) power to achieve a facet angle of 5 deg from vertical. Subsequent etching in AZ400K developer was investigated to reduce the facet surface roughness and improve facet verticality. The resulting combined processes produced improved facet sidewalls with an average angle of 0.7 deg from vertical and less than 2-nm root-mean-square (RMS) roughness, yielding an estimated reflectivity greater than 95% of that of a perfectly smooth and vertical facet.     

光刻伺服盘检测

光刻伺服盘系统作为新一代的磁盘伺服定位技术研究成功,通过检测实验,其质量已达到设计要求.     

IF钢原位加热再结晶受阻原因分析

采用带有原位加热装置的SEM对冷轧变形量ε为1．2的IF钢再结晶过程进行了观察，结果表明，当加热温度为该钢的再结晶温度650℃时，该钢再结晶过程受阻，加热过程中试样表面形成蚀沟，并随加热时间延长蚀沟不断加深，而试样表面未发生再结晶现象。对产生该现象的原因进行了深入分析。