Waveguide external cavity narrow linewidth semiconductor lasers

Narrow linewidth light source is a prerequisite for high-performance coherent optical communication and sensing.Waveguide-based external cavity narrow linewidth semiconductor lasers(WEC-NLSLs)have become a competitive and attractive candidate for many coherent applications due to their small size,volume,low energy consumption,low cost and the ability to integrate with other optical components.In this paper,we present an overview of WEC-NLSLs from their required technologies to the state-of-the-art progress.Moreover,we highlight the common problems occurring to current WEC-NLSLs and show the possible approaches to resolving the issues.Finally,we present the possible development directions for the next phase and hope this review will be beneficial to the advancements of WEC-NLSLs.     

应变纤锌矿ZnO/MgxZn1-xO量子点中离子施主束缚激子的光学性质

Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong built-in electric field(BEF) in strained wurtzite Zn O/Mg0:25Zn0:75O quantum dots(QDs), the optical properties of ionized donor-bound excitons(D+, X)are investigated theoretically using a variational method. The computations are performed in the case of finite band offset. Numerical results indicate that the optical properties of(D+, X) complexes sensitively depend on the donor position, the QD size and the BEF. The binding energy of(D+, X) complexes is larger when the donor is located in the vicinity of the left interface of the QDs, and it decreases with increasing QD size. The oscillator strength reduces with an increase in the dot height and increases with an increase in the dot radius. Furthermore, when the QD size decreases, the absorption peak intensity shows a marked increment, and the absorption coefficient peak has a blueshift. The strong BEF causes a redshift of the absorption coefficient peak and causes the absorption peak intensity to decrease remarkably. The physical reasons for these relationships have been analyzed in depth.     

Gamma ray irradiation induced point defects in BaF2

There are some original nonmagnetic point defects in the BaF2 crystallite powder,such as interstitial and vacant F^- which can become paramagnetic centers by γ-ray-irradiation at room temperature,Afterγ-ray irradiation the paramagnetic point defects Vk,H,F and M centers,have been observed in the sample with experiment of electron spin resonance(ESR).Frenkel exciton,a nonmagnetic point defect,can also be induced by the γ-ray irradiation in the sample at room temperature,the existence of the Frenkel exciton is affirmed by an anomalous change of the ESR signal of Vk center with temperature,The signals of the ESR of the H,F and M centers weaken and vanish with the temperature increasing monotonously,But the ESR signal of the Vk enhances when the temperature goes up about 127℃,then weakens and vanishes.An increase in the Vk center follows an annihilation of the Frenkel exciton with heating.     

非掺杂InP的低温光致发光研究

研究了2K低温下非有意掺杂InP单晶的光致发光谱,对近带边的辐射跃迁进行了仔细分析,报道了InP单晶在大功率光激发时束缚于中性施主的激子跃迁发光相对减弱、而束缚于中性受主的激子跃迁发光相对增强的现象,并探讨了其机制,确认了材料中存在Mg、Zn等残余受主杂质,并计算得到Mg受主的离化能为41.5meV.     

光刻技术及其新进展

介绍了用于制作半导体集成电路的光刻工艺的概念、分类及发展过程，阐述了当前光刻工艺的主流，并重点介绍了极紫外光刻、X射线光刻、电子束光刻、离子束光刻、纳米图形转印等下一代光刻技术的特点及其面临的挑战。     

高功率窄线宽可调谐 1 064 nm 环形腔激光

文章采用了三镜环形腔内插入标准具获取高功率窄线宽可调谐1064 nm 激光。对环形腔的单向运行、标准具压窄线宽与调谐波长及激光大基模体积运转进行了理论分析与计算,结合实验优化了腔镜曲率与输出耦合率。在808 nm 半导体激光泵浦功率151 W 条件下,获得输出功率33.7 W、光束质量因子 M 2＝1.28、线宽0.1 GHz 的单向1064 nm 激光输出,相应的光转换效率22.3%。采用高精度控温仪对标准具进行精确温控,实现激光波长的精密调谐。改变标准具温度获得1064 nm 波长调谐范围72.6 GHz,调谐精度为220 MHz。波长调谐过程中1064 nm 激光输出功率变化约10%。整个系统稳定可靠,而且相对简单,较易实现,为获得可调谐窄线宽1064 nm 激光提供了实用有效的技术手段。     

New features of the Mott-Hubbard insulator gap of parent HTS compounds found by resonance Raman scattering and UV-excited ordinary Raman scattering

Optical absorption at the insulating gap in the parent phase of cuprate superconductors shows a broad exciton-like peak near 1.7 eV, followed by a gradual decrease in absorption persisting 1 eV above the gap. By using ultraviolet laser lines to excite Raman spectra, we have found a Raman peak 0.2 eV below the first absorption peak in insulating cuprates. The Raman peak is much narrower than the absorption peak and hasA _2g symmetry. We assign it to an exciton consisting of a hole transition from Cu to a linear combination of Cud _xy and nearest neighbor Op orbitals. We have also studied the resonance Raman profile for two-magnon Raman scattering in the same samples. We find a sharp resonance feature at about 2.7 eV, and little Raman intensity for photon energies at the 1.7 eV absorption peak. The state created at the peak must therefore be an inappropriate intermediate state for the double spin-flip Raman process.     

Ultraefficient Non-Doped Deep Blue Fluorescent OLED: Achieving a High EQE of 10.17% at 1000 cd m−2 with CIEy<0.08

The pursuit for efficient deep blue material is an ever-increasing issue in organic optoelectronics field. It is a long-standing challenge to achieve high external quantum efficiency (EQE) exceed 10% at brightness of 1000 cd m⁻² with a Commission International de L'Eclairage (CIE_y) <0.08 in non-doped organic light-emitting diodes (OLEDs). Herein, this study reports a deep blue luminogen, PPITPh, by bonding phenanthro[9,10-d]imidazole moiety with m-terphenyl group via benzene bridge. The non-doped OLED based on PPITPh exhibits an exceptionally high EQE of 11.83% with a CIE coordinate of (0.15, 0.07). The EQE still maintains 10.17% at the brightness of 1000 cd m⁻², and even at a brightness as high as 10000 cd m⁻², an EQE of 7.5% is still remained, representing the record-high result among non-doped deep-blue OLEDs at 1000 cd m⁻². The unprecedented device performance is attributed to the reversed intersystem crossing process through hot exciton mechanism. Besides, the maximum EQE of orange phosphorescent OLED with PPITPh as host is 32.02%, and remains 31.17% at the brightness of 1000 cd m⁻². Such minimal efficiency roll-off demonstrates that PPITPh is also an excellent phosphorescent host material. The result offers a new design strategy for the enrichment of high-efficiency deep blue luminogen.     

Indirect Exciton–Phonon Dynamics in MoS2 Revealed by Ultrafast Electron Diffraction

Transition metal dichalcogenides layered nano-crystals are emerging as promising candidates for next-generation optoelectronic and quantum devices. In such systems, the interaction between excitonic states and atomic vibrations is crucial for many fundamental properties, such as carrier mobilities, quantum coherence loss, and heat dissipation. In particular, to fully exploit their valley-selective excitations, one has to understand the many-body exciton physics of zone-edge states. So far, theoretical and experimental studies have mainly focused on the exciton–phonon dynamics in high-energy direct excitons involving zone-center phonons. Here, ultrafast electron diffraction and ab initio calculations are used to investigate the many-body structural dynamics following nearly- resonant excitation of low-energy indirect excitons in MoS₂. By exploiting the large momentum carried by scattered electrons, the excitation of in-plane K- and Q- phonon modes are identified with 𝑬^′ symmetry as key for the stabilization of indirect excitons generated via near-infrared light at 1.55 eV, and light is shed on the role of phonon anharmonicity and the ensuing structural evolution of the MoS₂ crystal lattice. The results highlight the strong selectivity of phononic excitations directly associated with the specific indirect- exciton nature of the wavelength-dependent electronic transitions triggered in the system.