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排序方式: 共有2946条查询结果,搜索用时 15 毫秒
1.
Nonlinearity in regulating the metal to insulator transition of ReNiO3 towards low temperature range
《Ceramics International》2022,48(21):31995-32000
Among the existing material family of the correlated oxides, the rare earth nickelates (ReNiO3) exhibit broadly adjustable metal to insulator transition (MIT) properties that enables correlated electronic applications, such as thermistors, thermochromics, and logical devices. Nevertheless, how to accurately control the critical temperature (TMIT) of ReNiO3 via the co-occupation of the rare-earth elements is yet worthy to be further explored. Herein, we demonstrate the non-linearity in adjusting the TMIT of ReNiO3 towards lower temperatures via introducing Pr co-occupation within ReNiO3 (e.g., PrxNd1-xNiO3 and PrxSm1-xNiO3) as synthesized by KCl molten-salt assisted high oxygen pressure reaction approach. Although the TMIT is effectively reduced via Pr substitution, it does not strictly follow a linear relationship, in particular, when there is large difference in the ionic radius of the co-occupation rare-earth elements. Furthermore, the most significant deviation in TMIT from the expected linear relationship appears at an equal co-occupation ratio of the two different rare-earth elements, while the abruption in the variation of resistivity across TMIT is also reduced. The present work highlights the importance to use adjacent rare-earth elements with co-occupation ratio away from 1:1 for achieving more linear adjustment in designing the metal to insulator transition properties for ReNiO3. 相似文献
2.
We propose all printed and highly stable organic resistive switching device (ORSD) based on graphene quantum dots (G-QDs) and polyvinylpyrrolidone (PVP) composite for non-volatile memory applications. It is fabricated by sandwiching G-QDs/PVP composite between top and bottom silver (Ag) electrodes on a flexible substrate polyethylene terephthalate (PET) at ambient conditions through a cost effective and eco-friendly electro-hydrodynamic (EHD) technique. Thickness of the active layer is measured around 97 nm. The proposed ORSD is fabricated in a 3 × 3 crossbar array. It operates switching between high resistance state (HRS) and low resistance state (LRS) with OFF/ON ratio ∼14 for more than 500 endurance cycles, and retention time for more than 30 days. The switching voltage for set/reset of the devices is ±1.8 V and the bendability down to 8 mm diameter for 1000 cycles are tested. The elemental composition and surface morphology are characterized by XPS, FE-SEM, and microscope. 相似文献
3.
Luca Pietrobon Lorenzo Fallarino Andreas Berger Andrey Chuvilin Flix Casanova Luis E. Hueso 《Small (Weinheim an der Bergstrasse, Germany)》2015,11(47):6295-6301
Graphene has been predicted to develop a magnetic moment by proximity effect when placed on a ferromagnetic film, a promise that could open exciting possibilities in the fields of spintronics and magnetic data recording. In this work, the interplay between the magnetoresistance of graphene and the magnetization of an underlying ferromagnetic insulating film is studied in detail. A clear correlation between both magnitudes is observed but through a careful modeling of the magnetization and the weak localization measurements, that such correspondence can be explained by the effects of the magnetic stray fields arising from the ferromagnetic insulator is found. The results emphasize the complexity arising at the interface between magnetic and 2D materials. 相似文献
4.
5.
Takashi Yamazaki Yoichi Takino Ryosuke Matsuoka Susumu Ito 《Electrical Engineering in Japan》1993,113(8):26-36
According to the recent analysis results of temporary ac overvoltage in the ac system connected with a frequency converter station, large-magnitude over-voltages were confirmed to occur under some special system conditions. Most of the station insulators currently used cannot withstand such overvoltages according to an evaluation based on the data obtained earlier. The necessity of tests to be done to evaluate such performance more accurately was recognized. Both power frequency and switching impulse overvoltage flashover tests were made on contaminated insulators by the method well simulating the natural wetting condition. Switching impulse flashover voltage with the waveshape having a long wavefront time of 2 ms can be well correlated with the flashover voltage characteristics of temporary ac overvoltage. Higher flashover voltage characteristics were obtained by a clean fog test method compared with those obtained by equivalent fog test method. 相似文献
6.
复合绝缘子耐电腐蚀特点及其电蚀老化区域性的差异 总被引:6,自引:0,他引:6
为了了解复合绝缘子外绝缘材质电蚀老化状态和区域性的差异,对Al(OH)3耐电腐蚀机理、外绝缘材质中Al(OH)3颗粒分布状态和环境污湿因素的实际情况进行了研究。Al(OH)3颗粒分解成水蒸气、析出白色粉末状氧化铝,并催化生成二氧化碳,将使外绝缘材质逐渐微观减薄和加大表面的粗糙度,而引起电蚀老化的污湿环境因素,近期不可能得到改善,因此必然引起其电蚀老化出现区域性差异。此外,外绝缘憎水表面污珠场强变化引起的电晕也是促使电蚀老化的重要因素。 相似文献
7.
8.
Xiang Lu S. Sundar Kumar Iyer Jin Lee Brian Doyle Zhineng Fan Paul K. Chu Chenming Hu Nathan W. Cheung 《Journal of Electronic Materials》1998,27(9):1059-1066
We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII)
for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high
cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation
of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous
buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO2 interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique
is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant
in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen
induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure
combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force
which is sufficient to overcome the silicon fracture resistance. 相似文献
9.
钙铁硅铁磁体微晶玻璃热处理制度的研究 总被引:4,自引:2,他引:2
使用XRD、DTA、VSM等分析测试手段对在还原气氛下含少量B2O3、P2O5钙铁硅微晶玻璃的热处理制度进行了较深入的研究。研究发展,预核化处理对于钙铁硅微晶玻璃的晶化无明显作用。900℃作为钙铁硅微晶玻璃的晶化温度较适宜,晶化时间宜8h以上。 相似文献
10.