综放高瓦斯矿井煤层瓦斯涌出量综合预测

为了成功预测竹林山煤矿综放高瓦斯矿井大采高工作面煤层瓦斯涌出量,以主采3号煤层为主要研究对象,针对3号煤层以往开采情况,通过布设测点测量其煤层瓦斯含量和了解相邻矿井瓦斯含量,采用分源预测法、回归法及统计法等预测方法得到了3号煤层瓦斯含量的分布规律,并绘制了3号煤层的瓦斯含量等值线图。对矿井不同生产时期的瓦斯含量进行预测,得到了生产前期、中期及后期采区的最大绝对瓦斯涌出量和最大相对瓦斯涌出量,说明了竹林山煤矿各个时期均属于高瓦斯矿井。     

Electrochemically induced asymmetrical etching in InAlAs/InGaAs heterostructures for MODFET gate-groove fabrication

We have achieved a self-controlled asymmetrical etching in metalorganic chemical vapor deposition-grown InAlAs/InGaAs heterostructures, which can be suitable for fabricating modulation-doped field-effect transistors (MODFETs) with gate-groove profiles for improved performance. The technology is based on electrochemical etching phenomena, which can be effectively controlled by using different surface metals for ohmic electrodes. When surface metals of Pt and Ni are deposited on the source and the drain, respectively, the higher electrode potential of Pt results in slower etching on the source side than on the drain side. Thus, asymmetry of gate grooves can be formed by wet-chemical etching with citric-acid-based etchant. This represents a new possibility to conduct “recess engineering” for InAlAs/InGaAs MODFETs.     

导向钻井系统在多目标大井斜定向井中的应用

详细介绍了C-D井在钻进过程中井眼轨迹的控制过程,总结了在C-D井中使用导向钻井系统的成功经验。用1根导向马达、2套钻具组合、3只牙轮钻头顺利地完成了定向、增斜、稳斜及降斜,7个目标点一次击中,且最小靶心距仅0.99m。用15d完成了这口斜深2287.09m、井斜58.40°、水平位移903.11m的多目标定向井,钻穿目标点之多、实钻井眼剖面符合率之高、施工难度之大、速度之快,在目前国内都处于领先地位。     

掺杂InGaAs／InAlAs单量子阱中电子对称态和反对称态磁输运研究

利用变温Hall测量研究了重掺杂InGaAs／InAlAs单量子阱中二维电子气，发现在量子阱中由于存在电子对称态和反对称态导致纵向电阻出现拍频现象。通过分析拍频节点位置，得到电子对称态和反对称态之间的能级间距为4meV。此外，通过迁移率谱方法和多载流子拟合过程研究了不同迁移率电子的浓度和迁移率随温度的变化关系。     

In-situ monitoring and control for MOCVD growth of AlGaAs and InGaAs

We have used spectroscopic ellipsometry to perform real-time monitoring during metalorganic chemical vapor deposition growth of AlGaAs (on GaAs) and InGaAs (on GaAs and InP). Optical constants for these materials were obtained up to growth temperatures of 600 to 700°C. This information permits real-time extraction of composition and layer thickness from the raw ellipsometric data at sample rates on the order of 0.5 Hz. We describe closed-loop control of composition and total layer thickness on AlGaAs-based structures, including Bragg reflectors. In-situ data obtained on double-heterostructure quantum-well laser structures demonstrate that spectroscopic ellipsometry is an extremely powerful monitoring and quality-control tool, giving important real-time information on complex structures that would be difficult and time-consuming to obtain after growth.     

In_（0．2）Ga_（0．8）As／GaAs应变多量子阱结构的光调制反射和热调制反射谱的研究

对Ｉｎ（０．２）Ｇａ（０．８）Ａｓ／ＧａＡｓ应变多量子阱在７７Ｋ下的光调制反射谱（ＰＲ）和热调制反射谱（ＴＲ）进行了实验研究．对ＰＲ结果的线形拟合指认了应变多量子阱中子能级的跃迁，并与理论计算结果作了比较．实验对比确认ＰＲ中１１Ｈ、１３Ｈ等跃迁结构为非耦合态、具有电场调制机构的一阶微商性质．而１１Ｌ、３１Ｈ、２２Ｈ等跃迁结构为阶间耦合态，对这些隧穿耦合的低场调制产生三阶微商特性．     

单片InGaAs／InP PIN PD阵列

文章简要地介绍了ＩｎＧａＡｓ／ＩｎＰ ＰＩＮ ＰＤ阵列的制作现状及其应用和发展趋势。     

Atmospheric and low pressure shadow masked MOVPE growth of InGaAs(P)/InP and (In)GaAs/(Al)GaAs heterostructures and quantum wells

The shadow masked growth technique is presented as a tool to achieve thickness and bandgap variations laterally over the substrate during metalorganic vapor phase epitaxy. Lateral thickness and bandgap variations are very important for the fabrication of photonic integrated circuits, where several passive and active optical components need to be integrated on the same substrate. Several aspects of the shadow masked growth are characterized for InP based materials as well as for GaAs based materials. Thickness reductions are studied as a function of the mask dimensions, the reactor pressure, the orientation of the masked channels and the undercutting of the mask. The thickness reduction is strongly influenced by the mask dimensions and the reactor pressure, while the influence of the orientation of the channels and the amount of undercutting is only significant for narrow mask windows. During shadow masked growth, there are not only thickness variations but also compositional variations. Therefore, we studied the changes in In/Ga and As/P ratios for InGaAs and InGaAsP layers. It appears that mainly the In/Ga-ratio is responsible for compositional changes and that the As/P-ratio remains unchanged during shadow masked growth.     

高非线性光纤及其应用

介绍了各种高非线性光纤的原理，并对其在超连续（SC）脉冲的产生和波长变换上的应用作了讨论。     

某军用直流电源的RET方法研究

可靠性强化试验(RET)是一种新兴的试验技术,它使用在产品的设计阶段,用于快速暴露产品的缺陷和薄弱环节。以某军用直流电源为例介绍了可靠性试验方法,并对可靠性强化试验方法的优越性进行了讨论。