Fabrication of oxide-based near infrared-shielding coatings for a smart window to prevent infrared-induced photoaging in human skin

Oxide-based near infrared (IR)-shielding coatings consisting of quarter‐wave stacks of oxygen-deficient tantalum oxide (Ta₂O_5?x) and silicon oxide (SiO₂) multilayers and tin-doped indium oxide (In₂O₃) (ITO) films with the thicknesses of 200–600 nm can block the passage of IR-A (wavelength: 760–1400 nm) and IR-B (wavelength: 1400–3000 nm) radiation, respectively. In this study, the optical properties and microstructure of these oxide-based IR-shielding coatings were investigated. Transmission electron microscopy images indicated that amorphous Ta₂O_5?x/amorphous SiO₂ multilayers were uniform and dense. ITO films were found to be highly crystalline and show carrier concentrations of up to 7.1 × 10²⁰ cm^?3, resulting in the strong IR-B optical absorption due to the plasma excitation of the free carriers. Oxide-based IR-shielding coatings with an ITO thickness of 420 nm were found to have near-IR shielding rates of >90% and an average visible light transmittance of >70%. The effects of IR on human keratinocytes were studied to evaluate the IR-induced photoaging in human skin. It was found that the downregulation of cellular proliferation and the enhancement of senescence-associated β-galactosidase activity induced by IR irradiation were significantly inhibited by oxide-based IR-shielding coatings. Thus, this study provides a facile method for the development of coatings for smart windows with high IR-shielding ability and high visible light transmittance.     

Electrosprayed and selenized Cu/In metal particle films

Nano-particulate copper and indium metal layers of 1-2 μm have been deposited by non-vacuum techniques such as doctor blade, screen printing and electrospray using alcoholic suspension pastes. Electrospray showed a high efficiency of material usage and yielded the most uniform morphology. The metal precursor layers were subjected to a thermal treatment (500-600 °C) in selenium vapor to convert the porous metal layers into CuInSe₂ compound layers. The chemical conversion, investigated by X-ray diffraction, showed the presence of the In₂O₃ impurity phase in the precursor as well as in the selenized layers.     

Improvement of the optical properties of electrodeposited CuInSe2 thin films by thermal and chemical treatments

Cu, In and Se have been codeposited in thin films by potentiostatic one-step electrodeposition. The as-deposited material has shown direct optical transitions attributable to the CuInSe₂ semiconductor, but also additional absorption corresponding to another semimetallic phase. The secondary phases are selenium and copper selenide compounds which have been determined by composition measurements. In order to eliminate the semimetallic phases and to improve the semiconductor behaviour of the electrodeposited material, thermal and chemical treatments have been performed. After heat-treatment of the samples at 400°C in flowing argon, elemental selenium loss has been detected together with an enhancement of the allowed direct optical transition. The subsequent chemical etching of the layers in a KCN solution has showed to be successful in eliminating the copper selenide phases which were responsible of the remaining sub-bandgap absorption.     

D_2EHDTPA萃取铟的热力学研究

报道了用二 (2 乙基己基 )二硫代磷酸为萃取剂 ,以正庚烷为稀释剂萃取铟的热力学研究。在In2 (SO4 ) 3+Na2 SO4 +D2 EHDTPA +n C7H1 6 +H2 O体系中 ,在温度 2 78.15～ 3 0 3 .15K和离子强度 0 .1～ 2 .0mol·kg- 1 范围内 ,以Na2 SO4 为支持电解质 ,测定了萃取平衡水相中In3+浓度和pH值。计算了萃取反应的标准平衡常数K0 ,并得到经验公式logK0 =43 .93 -5 3 68.5 4 T -0 .0 699T ,同时计算了萃取反应的其他热力学量 ,并指出了焓和熵都是此萃取过程的推动力     

Change in the decomposition mode of 1-propanamine due to the presence of cations in MFI zeolite

The adsorption and thermal analysis of 1-propanamine has been compared over MFI zeolites which contain H, Ga, and In cations. In the case of H⁺-containing materials, NH₃ and propene are simultaneously desorbed above 600 K. This behavior, is well known and characteristic of the Hofmann elimination reaction. However, a distinctly different mode of reaction is observed in the case of Ga and In containing materials. NH₃ is released below 600 K, propene and other products are released above 600 K, and a stable residue remains above 800 K. It is suggested that such behavior results from Lewis acid interactions of Ga or In cations with propanamine.On leave from the Bulgarian Academy of Sciences, Institute of Organic Chemistry.     

Characterization of CuInS2 thin films for solar cells prepared by spray pyrolysis

We have made a study of the chemical composition, the electrical, the optical and the structural properties of polycrystalline CuInS₂ thin films prepared by spray pyrolysis to be used for thin film solar cells. These films were deposited starting from aqueous solutions with different chemical compositions ([Cu]/[In] and [S]/[Cu] ratios) and at different substrate temperatures. In all cases, the material is p-type with grains preferentially oriented in the (112) direction of the sphalerite structure. The electro-optical properties show a very strong dependence on the [Cu]/[In] ratio in the solution. Films with copper excess have smaller resistivity and better crystallinity than those which are stoichiometric or have indium excess. The results obtained in this work show the possibility of having CuInS₂ thin films with a wide range of resistivity, a fact that could be important for making solar cells based on this material.     

热处理对制备纳米氧化铟锡(ITO)粉末的影响

以共沸蒸馏工艺辅助的共沉淀法制备了纳米氧化铟-氧化锡（ITO）粉体，研究了不同热处理温度对制备粉体的影响，结果表明，随着热处理温度的提高，粉体发生从四方结构向体心立方结构转变，晶粒出现长大现象，比表面积变化明显，化学组分保持高纯状态，综合比较，在700～800℃进行热处理可以得到尺寸均匀，晶形完整的纳米级粉体。     

Electrochemical behaviour of indium ions in molten equimolar CaCl2–NaCl mixture at 550 ∘C

The stability of indium chloride and oxide as well as the electrochemical behaviour of indium ions have been studied in the equimolar CaCl2–NaCl melt at 550 C by X-ray diffraction (XRD) and different electrochemical techniques, using molybdenum and tungsten wires as working electrodes. Voltammetric and chronopotentiometric studies showed signals attributed to the presence of three oxidation states of indium, i.e. 0, i and iii. The standard potential of the redox couples, as well as the solubility products of indium oxides have been determined, showing that In(iii) ions are completely reduced to monovalent indium by the indium metal according to the reaction: In () + 2 In 3 In () and that In₂O is a strong oxide donor according to the reaction: In₂O(s) 2 In() + O^2- These results have allowed the construction of E-pO2– equilibrium diagrams summarising the properties of In–O compounds. The electrodeposition of indium was uncomplicated at Mo and W electrodes. Very good adherence of liquid indium to the electrode materials was observed, with the formation of Na–In alloys at highly reducing potentials, and there was no evidence of indium dissolution into the melt. Moreover, the voltammograms corresponding to the electrochemical In(iii)/In(i) exchange were well defined. The two electrochemical steps were found to be quasi-reversible, and the values of the kinetic parameters, ko and , for both reactions, as well as the diffusion coefficients, DIn(III) and DIn(I) were calculated.     

不同Li/Nb摩尔比In∶Fe∶LiNbO_3晶体的生长及其光学性能

在Li NbO3(LN)中掺摩尔分数为1%的In和掺质量分数为0.03%的Fe,用提拉法技术生长具有不同n(Li)/n(Nb)[n(Li)/n(Nb)=0.94,1.05,1.20,1.38]的In∶Fe∶LN晶体。测试不同n(Li)/n(Nb)的In∶Fe∶LN晶体的吸收光谱、抗光致散射能力和指数增益系数,并计算晶体的有效载流子浓度。结果表明晶体样品随着n(Li)/n(Nb)增加,吸收光谱的吸收边发生紫移,抗光致散射能力增加,指数增益系数和有效载流子浓度增大。采用n(Li)/n(Nb)=1.38的In∶Fe∶LN晶体作记录介质,n(Li)/n(Nb)=1.05的In∶Fe∶LN晶体作位相共轭镜进行全息关联存储实验。实验表明存储系统具有实时处理,成像质量好,信噪比高和能反复使用等优点。     

粒径均匀的氧化铟粉末的研制

以金属铟，硫酸，氨水为原料，通过工艺条件的选择，制备出过滤性良好的氢氧化铟沉淀物。该沉淀物经过干燥，煅烧不需将氧化物粉碎就可以得到粉末状氧化铟。最佳工艺条件为：反应液中铟离子初始浓度调节在70g/L以下，碱添加量为铟含量的3－4倍；沉淀反应温度控制在90℃以上。