有互感和电源的电容耦合电路的量子涨落

通过正则变换和幺正变换的方法研究了有互感和电源存在的情况下的介观电容耦合电路的量子涨落。结果表明电荷和电流的量子涨落与电源无关。当电路元件确定时，如果L1／L2的值很大或很小，耦合对涨落的影响很大。互感从有到无的过程中，回路1中电流的涨落和回路中2中电荷的涨落有明显的变化。换句话说，互感的有无对涨落的大小起着举足轻重的作用。     

Science in High Magnetic Fields: What Could Be Learned?

High magnetic fields are one of the most powerful tools available to scientists for the study, modification and control of matter. This includes the knowledge on correlations effects, interaction mechanisms, structural information and understanding of mesoscopic effects. In this context, a review of recent scientific achievements at the Grenoble High Magnetic Laboratory is given to illustrate, on specific examples, the power of the Magnetic Field probe.     

在经典极限下量子斯特林制冷机的优化

经济利润率是评价一个实际热力装置的主要指标之一。将有限时间热力学，非平衡量子统计理论和yong经济学相结合，导出了量子斯特林制冷机的最大利润率以及对应的性能界限，其结果与实际斯特林制冷机的优化设计和模型评估提供了一个最佳的预选方案。     

On the complexity of simulating space-bounded quantum computations

This paper studies the space-complexity of predicting the long-term behavior of a class of stochastic processes based on evolutions and measurements of quantum mechanical systems. These processes generalize a wide range of both quantum and classical space-bounded computations, including unbounded error computations given by machines having algebraic number transition amplitudes or probabilities. It is proved that any space s quantum stochastic process from this class can be simulated probabilistically with unbounded error in space O(s), and therefore deterministically in space O(s²).     

自发参量下转换制备双光子纠缠态在量子信息学中的应用

叙述了自发参量下转换制备双光子纠缠态技术的发展历程、技术原理以及在量子信息学中的应用，并介绍了国内这一领域的进展。     

分子振动态及其跃迁的激光相干控制

讨论了激光合成相干叠加态的原理及其性质 ,针对 XY2 型分子 ,证明了合成局域模振动的可行性 ,然后给出相干叠加态的跃迁几率特征 ,发现它仍表现出相干的特性 ,对之进行分析研究表明 ,分子的振动态具有可控性 ,态跃迁几率具有可控性。     

Power Dissipation in Spintronic Devices Out of Thermodynamic Equilibrium

Quantum limits of power dissipation in spintronic computing are estimated. A computing element composed of a single electron in a quantum dot is considered. Dynamics of its spin due to external magnetic field and interaction with adjacent dots are described via the Bloch equations. Spin relaxation due to magnetic noise from various sources is described as coupling to a reservoir. Resulting dissipation of energy is calculated and is shown to be much less than the thermal limit, ∼kT per bit, if the rate of spin relaxation is much slower than the switching rate. Clues on how to engineer an energy efficient spintronic device are provided.     

硅表面上的纳米量子点的自组织生长

纳米半导体量子点以其所具有的新颖光电性质与输运特性正在受到人们普遍重视。作为制备高质量纳米量子点的工艺技术 ,自组织生长方法倍受材料物理学家的青睐。而如何制备尺寸大小与密度分布可控的纳米量子点更为人们所注目。因为这是关系到纳米量子点最终能否器件实用化的关键。文中以此为主线 ,着重介绍了各种 Si表面 ,如常规表面、氧化表面、台阶表面以及吸附表面上 ,不同纳米量子点的自组织生长及其形成机理 ,并展望了其未来发展前景     

Optical and structural properties of MOVPE grown GaxIn1−xAs/InP strained multiple quantum well atructures

This paper presents a study of the structural and optical properties of strained GaInAs/ InP multiple quantum well (MQW) structures fabricated by LP-MOVPE. The composition of the Ga _x In_1−x As films ranged fromx = 0.17 tox = 1.0 and was determined by sputtered neutral mass spectrometry (SNMS) on thick layers. The structures of the MQW samples with well widths from 1.5 to 5 nm were investigated by high resolution x-ray diffraction (HR-XRD). Simulations of the diffraction patterns showed that transition layers of approximately 2 monolayer (ML) thickness with high lattice mismatch exist at the interfaces. Photoluminescence (PL) measurements indicate well widths of a multiple of a monolayer with local variations of one monolayer. The PL peak energies vary smoothly with the Ga concentration. These results were confirmed by optical absorption measurements.     

Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part I. Simulation Programs

The suitability of the semiconductor-device modeling program PC-1D for high-accuracy simulation of silicon photodiodes is discussed. A set of user interface programs optimized to support high-accuracy batch-mode operation of PC-1D for modeling the internal quantum efficiency of photodiodes is also described. The optimization includes correction for the dark current under reverse- and forward-bias conditions before calculating the quantum efficiency, and easy access to the highest numerical accuracy available from PC-1D, neither of which is conveniently available with PC-1D’s standard user interface.