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排序方式: 共有1276条查询结果,搜索用时 265 毫秒
1.
Changbai Long Ning Ji Li Yang Wenjie Zhou Kun Zheng Wei Ren Laijun Liu 《Journal of the European Ceramic Society》2021,41(6):3369-3378
With co-substitution of (Li0.5Sm0.5) at A site and W at B site, the electrical properties of modified Ca0.92(Li0.5Sm0.5)0.08Bi2Nb2-xWxO9 [(CLS)BN-xW, x = 0, 0.015 and 0.03] piezoceramics with ultrahigh Curie temperature (TC) of > 930 °C were enhanced dramatically. The increased resistivity induced by the co-substitution ensure them to be polarized under an enough high field. Combined with the increase of spontaneous ferroelectric polarization (PS), the significant enhancements in the piezoelectric, dielectric and ferroelectric properties can be obtained in the composition x = 0.015. Furthermore, the piezoelectric activity (d33) and bulk resistivity (ρb) of (CLS)BN-0.015 W can be further enhanced at an appropriate sintering temperature. This optimum composition sintered at 1170 °C shows ultrahigh TC of ~948 °C, d33 of ~17.3 pC/N and ρb of ~6.9 MΩ cm at 600 °C, which are comparable to those of the reported high-temperature Aurivillius piezoceramics with TC > 850 °C. 相似文献
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The In-Sn-Ni alloys of various compositions were prepared and annealed at 160°C and 240°C. No ternary compounds were found;
however, most of the binary compounds had extensive ternary solubility. There was a continuous solid solution between the
Ni3Sn phase and Ni3In phase. The Sn-In/Ni couples, made of Sn-In alloys with various compositions, were reacted at 160°C and 240°C and formed
only one compound for all the Sn-In alloys/Ni couples reacted up to 8 h. At 240°C, Ni28In72 phase formed in the couples made with pure indium, In-10at.%Sn and In-11at.%Sn alloys, while Ni3Sn4 phase formed in the couples made of alloys with compositions varied from pure Sn to In-12at.%Sn. At 160°C, except in the
In/Ni couple, Ni3Sn4 formed by interfacial reaction. 相似文献
5.
YOSHIHARU KARIYA TADATOMO SUGA 《Fatigue & Fracture of Engineering Materials & Structures》2007,30(5):413-419
This paper details the deformation mechanism and low‐cycle fatigue life of eutectic solder alloys at high temperature (around 0.8Tm). Grain boundary sliding generally nucleates a wedge‐type cavity that reduces the low‐cycle fatigue life of metals. In this study, grain boundary sliding has promoted intergranular failure contributing to the reduction in fatigue life of Sn–Ag–Cu alloy. However, grain boundary sliding has exerted no deleterious effects on fatigue resistance of eutectic Pb–Sn and Bi–Sn alloys. The phase boundary sliding with very fine microstructure induces exceptional ductility in these alloys leading to superior low‐cycle fatigue endurance for theses eutectic Pb–Sn and Bi–Sn alloys. 相似文献
6.
T. YAMAMOTO M. IWATA M. SAKANE Y. TSUKADA H. NISHIMURA 《Fatigue & Fracture of Engineering Materials & Structures》2007,30(5):376-386
This paper describes the creep‐fatigue life of Sn–8Zn–3Bi under push–pull loading. Creep‐fatigue tests were carried out using Sn–8Zn–3Bi specimens in fast–fast, fast–slow, slow–fast, slow–slow and hold–time strain waveforms. Creep‐fatigue lives in the slow–slow and hold‐time waveforms showed a small reduction from the fast–fast lives but those in the slow–fast and fast–slow waveforms showed a significant reduction from the fast–fast lives. Conventional creep‐fatigue life prediction methods were applied to the experimental data and the applicability of the methods was discussed. Creep‐fatigue characteristics of Sn–8Zn–3Bi were compared with those of Sn–3.5Ag and Sn–37Pb. 相似文献
7.
低熔封接玻璃组成及其发展 总被引:25,自引:2,他引:23
综述了低熔封接玻璃的组成特点,给出了大量低熔玻璃组成实例,批出了低熔封接玻璃的封接低温化和无铅化发展方向,磷酸盐玻璃是首选组成之一。新的制备工艺和新的玻璃形成体系将对封接玻璃发展起着十分重要的作用。 相似文献
8.
The reaction between the Sn-Ag-Cu solders and Ni at 250°C for 10 min and 25 h was studied. Nine different Sn-Ag-Cu solders,
with the Ag concentration fixed at 3.9 wt.% and Cu concentrations varied between 0.0–3.0 wt.%, were used. When the reaction
time was 10 min, the reactions strongly depended on the Cu concentration. At low-Cu concentrations (≦0.2 wt.%), only a continuous
(Ni1−xCux)3Sn4 layer formed at the interface. When the Cu concentration increased to 0.4 wt.%, a continuous (Ni1−xCux)3Sn4 layer and a small amount of discontinuous (Cu1−yNiy)6Sn5 particles formed at the interface. When the Cu concentration increased to 0.5 wt.%, the amount of (Cu1−yNiy)6Sn5 increased and (Cu1−yNi6)6Sn5 became a continuous layer. Beneath this (Cu1−yNiy)6Sn5 layer was a very thin but continuous layer of (Ni1−xCux)3Sn4. At higher Cu concentrations (0.6–3.0 wt.%), (Ni1−xCux)3Sn4 disappeared, and only (Cu1−yNiy)6Sn5 was present. The reactions at 25 h also depended strongly on the Cu concentration, proving that the strong concentration
dependence was not a transient phenomenon limited to a short reaction time. The findings of this study were rationalized using
the Cu-Ni-Sn isotherm. This study shows that precise control over the Cu concentration in solders is needed to produce consistent
results. 相似文献
9.
综述了环氧树脂基的PCB与无铅化组装的兼容性问题。经过大量试验表明,常规的FR-4基材和双氰胺固化的高Tg基材是不能满足无铅化组装要求的,而采用酚醛固化的中等-Tg的环氧树脂基材是可能成为无铅化组装用基材的。同时,PCB制造过程也起着重要的作用。PCB设计和再(回)流焊的加热梯度也影响着无铅化的性能。 相似文献
10.
W. J. PLUMBRIDGE Y. KARIYA 《Fatigue & Fracture of Engineering Materials & Structures》2004,27(8):723-734
With continuing miniaturisation, increased performance demands and the requirement to remove lead from solder alloys, the challenges to structural integrity and reliability of electronic equipment are substantial and increasing. This paper outlines typical features in electronic equipment of which the structural integrity community may be generally unaware. Potential failure modes in service are described, and the problems of scale and material characteristics are considered. Progress in the application of fracture mechanics to the life prediction of interconnections is reviewed. The limited evidence available suggests that the crack growth resistance of silver‐containing lead‐free solders is superior to that of the traditional Sn‐37Pb under cycle‐controlled conditions but there is no difference when time‐dependent conditions prevail. In several respects, it is contended that the electronics sector is faced with challenges at least equivalent to those encountered in gas turbines and nuclear power generation. 相似文献