Study of Pb-based and Pb-free perovskite solar cells using Cu-doped Ni1-xO thin films as hole transport material

SCAPS solar cell simulation program was applied to model an inverted structure of perovskite solar cells using Cu-doped Ni_1-xO thin films as hole transport layer. The Cu-doped Ni_1-xO film were made by co-sputtering deposition under different deposition conditions. By increasing the amount of the Cu-dopant, the film crystallinity enhanced whereas the bandgap energy decreased. The transmittance of the thin films decreased significantly by increasing the sputtering power of copper. High quality, uniform, compact, and pin-hole free films with low surface roughness were achieved. The structural, chemical, surface morphology, optical, electrical, and electronic properties of the Cu doped Ni_1-xO films were used as input parameters in the simulation of Pb-based (MAPbI_3-xCl_x) and Pb-free (MAGeI₃) perovskite solar cells. Simulation results showed that the performance of both Pb-based and Pb-free perovskite solar cell devices significantly enhanced with Cu-doped Ni_1-xO film. The highest power conversion efficiency (PCE) for the Pb-free perovskite solar cell is 8.9% which is lower than the highest PCE of 17.5% for the Pb-based perovskite solar cell.     

Modulation of electrical transport in calcium cobaltite ceramics and thick films through microstructure control and doping

Ca₃Co₄O₉ is a promising p-type thermoelectric oxide material having intrinsically low thermal conductivity. With low cost and opportunities for automatic large scale production, thick film technologies offer considerable potential for a new generation of micro-sized thermoelectric coolers or generators. Here, based on the chemical composition optimized by traditional solid state reaction for bulk samples, we present a viable approach to modulating the electrical transport properties of screen-printed calcium cobaltite thick films through control of the microstructural evolution by optimized heat-treatment. XRD and TEM analysis confirmed the formation of high-quality calcium cobaltite grains. By creating 2.0 at% cobalt deficiency in Ca_2.7Bi_0.3Co₄O_9+δ, the pressureless sintered ceramics reached the highest power factor of 98.0 μWm^?1 K^-2 at 823 K, through enhancement of electrical conductivity by reduction of poorly conducting secondary phases. Subsequently, textured thick films of Ca_2.7Bi_0.3Co_3.92O_9+δ were efficiently tailored by controlling the sintering temperature and holding time. Optimized Ca_2.7Bi_0.3Co_3.92O_9+δ thick films sintered at 1203 K for 8 h exhibited the maximum power factor of 55.5 μWm^?1 K^-2 at 673 K through microstructure control.     

Diluted chemical bath deposition of CdZnS as prospective buffer layer in CIGS solar cell

In this study, dilute chemical bath deposition technique has been used to deposit CdZnS thin films on soda-lime glass substrates. The structural, morphological, optoelectronic properties of as-grown films have been investigated as a function of different Zn²⁺ precursor concentrations. The X-ray diffractogram of CdS thin-film reveals a peak corresponding to (002) plane with wurtzite structure, and the peak shift has been observed with the increase of the Zn²⁺ concentration upon formation of CdZnS thin film. From morphological studies, it has been revealed that the diluted chemical bath deposition technique provides homogeneous distribution of film on the substrate even at a lower concentration of Zn²⁺. Optical characterization has shown that the transparency of the film is influenced by Zn²⁺ concentration and when the Zn²⁺ concentration is varied from 0 M to 0.0256 M, bandgap values of resulting films range from 2.42 eV to 3.90 eV while. Furthermore, electrical properties have shown that with increasing zinc concentration the resistivity of the film increases. Finally, numerical simulation validates and suggests that CdZnS buffer layer with composition of 0.0032 M Zn²⁺ concentration would be a promising candidate in CIGS solar cell.     

Large domain-wall currents in epitaxial Au/BiFeO3/SrRuO3 thin-film capacitors with modulated oxygen vacancy and wall densities

Large domain wall (DW) conductivity in an insulating ferroelectric plays an important role in the future nanosensors and nonvolatile memories. However, the wall current was usually too small to drive high-speed memory circuits and other agile nanodevices requiring high output-powers. Here, a large domain-wall current of 67.8 μA in a high on/off ratio of ~4460 was observed in an epitaxial Au/BiFeO₃/SrRuO₃ thin-film capacitor with the minimized oxygen vacancy concentration. The studies from read current-write voltage hysteresis loops and piezo-response force microscope images consistently showed remaining of partially unswitched domains after application of an opposite poling voltage that increased domain wall density and wall current greatly. A theoretical model was proposed to explain the large wall current. According to this model, the domain reversal occurs with the appearance of head-to-head and tail-to-tail 180° domain walls (DWs), resulting in the formation of highly conductive wall paths. As the applied voltage increased, the domain-wall number increased to enhance the on-state current, in agreement with the measurements of current-voltage curves. This work paves a way to modulate DW currents within epitaxial Au/BiFeO₃/SrRuO₃ thin-film capacitors through the optimization of both oxygen vacancy and domain wall densities to achieve large output powers of modern domain-wall nanodevices.     

Photophysical investigation of the formation of defect levels in P doped ZnO thin films

Zinc oxide (ZnO) offers a major disadvantage of asymmetry doping in terms of reliability, stability, and reproducibility of p-type doping, which is the main hindrance in realization of optoelectronic devices. The problem is even more complicated due to formation of various native defects in unintentionally doped n-type ZnO. The realization of p-type conductivity in doped ZnO requires an in-depth understanding of the formation of an effective shallow acceptor, as well as donor-acceptor compensation. Photophysical properties such as photoconductivity along with photoluminescence (PL) studies have unprecedentedly and effectively been utilized in this work to monitor the evolution of various in-gap defects. Phosphorus (P) doped ZnO thin films have been grown by RF magnetron sputtering under various Ar to O₂ gas ratios to investigate the effect of O₂ on the donor-acceptor compensation by comprehensive photoconductivity measurements supported by the PL studies. Initial elemental analyses indicate presence of abundant zinc vacancies (V_Zn) in O-rich ambience. The results predict that P sits in the zinc (Zn) site rather than the oxygen (O) site causing the formation of P_Zn–2V_Zn acceptor-like defects, which compensates the donor defects in P doped ZnO films. Photocurrent spectra uniquely reveal presence of more oxygen vacancies (V_O) defects states in lower O₂ flow, which gets compensated with an increase in the O₂ flow. Successive photocurrent transients indicate probable presence of more V_O in the films grown with lower O₂ flow and more V_Zn in higher O₂ flow. Overall the photosensitivity measurements clearly present that O-rich ambience expedites the formation of acceptor defects which are compensated, thereby lowering the dark current and enhancing the ultraviolet photosensitivity.     

Gyrotactic microorganisms bioconvection in combined convective magnetohydrodynamic Casson nanofluid flow over a vertically surfaced saturated porous media with variable viscosity

The current article focuses on mass and thermal transfer analysis of a two-dimensional immovable combined convective nanofluid flow including motile microorganisms with temperature-dependent viscosity on top of a vertical plate through a porous medium, and a model has been developed to visualize the velocity slip impacts on a nonlinear partial symbiotic flow. The governed equations include all of the above physical conditions, and suitable nondimensional transfigurations are utilized to transfer the governed conservative equations to a nonlinear system of differential equations and obtain numerical solutions by using the Shooting method. Numerical studies have been focusing on the effects of intricate dimensionless parameters, namely, the Casson fluid parameter, Brownian motion parameter, thermophoresis parameter, Peclet number, bioconvection parameter, and Rayleigh number, which have all been studied on various profiles such as momentum, thermal, concentration, and density of microorganisms. The concentration boundary layer thickness and density of microorganisms increased as the Casson fluid parameter, Brownian and thermophoresis parameters increased, whereas the bioconvection parameter, Peclet number, and Rayleigh number increased. The thermal boundary layer thickness, concentration boundary layer thickness, and density of microorganisms all decreased. The velocity distribution decreases as the Peclet number, bioconvection, and thermophoresis parameters rise but rises as the Rayleigh number, Brownian motion parameter, and Casson fluid parameter rise. These are graphed via plots along with divergent fluid parameters.     

基于改进SOA-VMD的磁声发射信号去噪算法

磁声发射（MAE）是铁磁性材料磁化过程中产生的声发射信号，在构件应力检测和微观损伤检测中有着广泛的应用。针对MAE信号非稳态、复杂性、衰减性等特点，提出海鸥算法结合变分模态分解（SOA-VMD）的去噪方法，为克服海鸥算法求解过程中易陷入局部最优解问题，利用柯西变异算子产生随机迭代过程，使改进算法即柯西变异海欧算法（CVSOA）跳出早熟收敛。采用以幅值谱熵为适应度函数，优化VMD算法中分解模态个数K和二次惩戒因子α两个参数，将含噪声的MAE信号进行VMD分解重构。经仿真信号和实际检测信号分析表明，改进后的CVSOA-VMD算法全局寻优能力和去噪性能优于传统的SOA-VMD算法，降噪后的MAE信号特征值对于不同应力下均方根、偏斜度特征值的重复性更好，可靠性更高。     

毫米波三维异质异构集成技术的进展与应用

三维异质异构集成技术是实现电子信息系统向着微型化、高效能、高整合、低功耗及低成本方向发展的最重要方法,也是决定信息化平台中微电子和微纳系统领域未来发展的一项核心高技术。文章详细介绍了毫米波频段三维异质异构集成技术的优势、近年来的发展趋势以及面临的挑战。利用硅基MEMS 光敏复合薄膜多层布线工艺可实现异质芯片的低损耗互连,同时三维集成高性能封装滤波器、高辐射效率封装天线等无源元件,还能很好地处理布线间的电磁兼容和芯片间的屏蔽问题。最后介绍了一款新型毫米波三维异质异构集成雷达及其在远距离生命体征探测方面的应用。     

The influence of FeNi nanoparticles on the microstructures and soft magnetic properties of FeSi soft magnetic composites

In this work, a new type of FeSi/FeNi soft magnetic powder core (SMPC) was successfully fabricated by coating FeNi nanoparticles on the surface of FeSi micrometer powder. The effects of different contents of FeNi nanoparticles on the micromorphology, internal structures, and soft magnetic properties of SMPCs were studied. The results show that FeNi nanoparticles adhere to the surface of FeSi powder, which can effectively fill the air gap between FeSi powder and is beneficial to the compaction of the powder cores during the pressing process. Thus, the density of the SMPCs is increased. Compared to FeSi SMPCs, the comprehensive soft magnetic properties of FeSi/FeNi SMPCs have been greatly improved. When adding 15 wt% FeNi nanoparticles, the SMPCs exhibit excellent magnetic properties with high effective permeability (increased by 43.8 %) and low core loss (decreased by 22.1 %). The high performance FeSi/FeNi SMPCs prepared in this work are expected to be widely used in power choke coils, uninterruptible power supplies, and boosts and inverter inductors.