Electrical Breakdown Properties and Space Charge Formation in High Temperature Region in Ultraviolet Ray Irradiated PVC

Polyvinyl chloride (PVC) is the most popular insulating material for electric wiring instruments. However, an exothermic reaction above 150 °C may cause deterioration of the insulating properties of PVC. Therefore, it is important to clarify the heat degradation in PVC, not only to investigate the ignition of electrical wiring products but also to use electrical products safely. It is known that ultraviolet (UV) irradiation causes chemical deterioration of PVC and an increase in its conductivity. Generally, it has been thought that the electrical breakdown properties, electrical conduction, and insulating performance are affected by space charge accumulation in an insulating material. A high temperature pulsed electroacoustic (PEA) system usable up to 250 °C has been developed, and the PEA system can measure the space charge distribution and conduction current in the high temperature range simultaneously. In this investigation, the space charge distribution and conduction current were measured up to electrical breakdown in a non‐UV irradiated sample (normal PVC) and in 353 nm and 253 nm UV‐irradiated PVC samples in the range from room temperature to 200 °C in a DC electric field. In the short wavelength UV irradiated PVC sample (253 nm, 300 h), a deterioration of breakdown strength at 90 °C to 150 °C and negative packet‐like charges were observed at 60 °C and 100 °C, a positive charge accumulated in front of both the anode and cathode above 90 °C, and a higher electric field near the cathode side because the positive charge of the cathode side was greater.     

Studies on high density polyethylene (HDPE) functionalized by ultraviolet irradiation and its application

The structure and properties of high density polyethylene (HDPE) functionalized by ultraviolet irradiation at different light intensities in air were studied by electron analysis, FTIR spectroscopy, contact angle with water, differential scanning calorimetry and mechanical properties measurement. The results show that oxygen‐containing groups such as C?O, C—O and C(?O)O were introduced onto the molecular chain of HDPE following irradiation, and the rate and efficiency of HDPE functionalization increased with enhancement of irradiation intensity. After irradiation, the melting temperature, contact angle with water and notched impact strength of HDPE decreased, the degree of crystallinity increased, and their variation amplitude increased with irradiation intensity. Compared with HDPE, the yield strength of HDPE irradiated at lower light intensity (32 W m^?2 and 45 W m^?2) increases monotonically with irradiation time, and the yield strength of HDPE irradiated at higher light intensity (78 W m^?2) increases up to 48 h and then decreased with further increase in irradiation time. The irradiated HDPE behaved as a compatibilizer in HDPE/polycarbonate (PC) blends, and the interface bonding between HDPE and PC was ameliorated. After adding 20 wt% HDPE irradiated at 78 W m^?2 irradiation intensity for 24 h to HDPE/PC blends, the tensile yield strength and notched Izod impact strength of the blend were increased from 26.3 MPa and 51 J m^?1 to 30.2 MPa and 158 J m^?1, respectively. Copyright © 2003 Society of Chemical Industry     

一种新型火焰安全监控系统的设计与实现

介绍了一种新型火焰安全监控系统，并详述了系统实现的方法及火焰检测部分的软硬件设计．为燃烧器的管理和燃料安全提供了一种很好的方法。     

1/f noise in large-area Hg<Subscript>1−x</Subscript>Cd<Subscript>x</Subscript>Te photodiodes

The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg_1−xCd_xTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of 1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The 1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density in the mid-10⁻¹⁵A/Hz^1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth i_n(f = 1 Hz, V_d = −60 mV, and Δf = 1 Hz) to dark current I_d(V_d = −60 mV) was α_SW-d = i_n/I_d ∼ 1 × 10⁻³. The SWIR detectors measured at 0 mV under illuminated conditions had median α_SW-P = i_n/I_ph ∼ 7 × 10⁻⁶. For mid-wave infrared (MWIR) detectors, α_MW-d = i_n/I_d ∼ 2 × 10⁻⁴, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under illuminated conditions at 98 K and −60 mV bias resulted in α_MW-P = i_n/I_ph = 4.16 ± 1.69 × 10⁻⁶. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias, with a noise-current-to-photocurrent ratio, α_MW-P, in the mid 10⁻⁶ range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, α_LW-d = i_n/I_d ∼ 6 × 10⁻⁶, for the best performers. The majority of the LWIR detectors exhibited α_LW-d on the order of 2 × 10⁻⁵. The photo-induced 1/f noise had α_LW-P = i_n/I_ph ∼ 5 × 10⁻⁶. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular bias. The 1/f noise was not a direct function of the applied bias.     

30.4 nm光电成像系统分辨率的初步实验研究

本文基于微通道板MCP(Microchannel Plate)探测器件设计一套成像系统，用于对波长为30．4nm的极紫外EUV(Extreme Ultraviolet)光进行成像．结果获得了一宽度为3mm的狭缝的像，实验测得490μm的成像系统的空间分辨率，并分析了影响系统分辨率的各种因素及为提高系统分辨率所应采取的措施．     

Using ion implantation to adjust the transition temperature of superconducting films

We summarize a continuing investigation into using ion implantation to alter the transition temperature of superconducting thin films. The primary motivation for the work presented here was to study the feasibility of using magnetic ion doping to replace the bi-layer T_c control process currently used for certain cryogenic detector applications at National Institute for Standards and Technology. The results from work with various ion species implanted into aluminum, molybdenum, titanium and tungsten host films are presented.     

Pool boiling on a superhydrophilic surface

Titanium Dioxide, TiO₂, is a photocatalyst with a unique characteristic. A surface coated with TiO₂ exhibits an extremely high affinity for water when exposed to UV light and the contact angle decreases nearly to zero. Inversely, the contact angle increases when the surface is shielded from UV. This superhydrophilic nature gives a self-cleaning effect to the coated surface and has already been applied to some construction materials, car coatings and so on. We applied this property to the enhancement of boiling heat transfer. An experiment involving the pool boiling of pure water has been performed to make clear the effect of high wettability on heat transfer characteristics. The heat transfer surface is a vertical copper cylinder of 17 mm in diameter and the measurement has been done at saturated temperature and in a steady state. Both TiO₂-coated and non-coated surfaces were used for comparison. In the case of the TiO₂-coated surface, it is exposed to UV light for a few hours before experiment and it is found that the maximum heat flux (CHF) is about two times larger than that of the uncoated surface. The temperature at minimum heat flux (MHF) for the superhydrophilic surface is higher by 100 K than that for the normal one. The superhydrophilic surface can be an ideal heat transfer surface. Copyright © 2002 John Wiley & Sons, Ltd.     

New developments in CdTe and CdZnTe detectors for X and γ-ray applications

There has been considerable recent progress in II-VI semiconductor material and in methods for improving performance of the associated radiation detectors. New high resistivity CdZnTe material, new contact technologies, new detector structures, new electronic correction methods have opened the field of nuclear and x-ray imaging for industrial and medical applications. The purpose of this paper is to review new developments in several of these fields. In addition, we will present some recent results at LETI concerning first the CdTe 2-D imaging system (20 × 30 mm² with 400 × 600 pixels) for dental radiology and second the CdZnTe fast pulse correction method applied to a 5 × 5 × 5 mm³ CdZnTe detector (energy resolution = 5% for detection efficiency of 85% at 122 keV) for medical imaging.     

Room temperature characterization of Hg1-xCdxTe P-on-n heterostructure photodiodes

Measurements of 77K R_oA and 300K reverse bias dynamic impedance (R_dA) products at one volt reverse bias has been carried out to assess the degree of correlation of this figure of merit. Planar P-on-n heterostructures were grown on near lattice-matched CdZnTe substrates with Hg_1-xCd_xTe (0.20< x <0.30) by molecular beam epitaxy. These devices were passivated with CdTe and doped with indium and arsenic as n- and p-type dopants, respectively. Current-voltage characteristic of these devices exhibit thermally generated dark currents at small and modest reverse bias. We have observed that R_oA values of these long wavelength infrared P-on-n heterostructure photodiodes at 77K correlate with room temperature R_dA values. Diode arrays with high room temperature R_dA values at one volt reverse bias also have high R_oA values at 77K. Similarly, low R_dA values at room temperature indicate poor performance at 77K where deviation from diffusion current occurs at reverse bias of 0.2 to 1 volt at room temperature. The results presented here, for a small samples of devices, demonstrate that room temperature measurements of current-voltage characteristics to evaluate Hg_1-xCd_xTe (0.22< x <0.28) diode performance and array uniformity at lower temperatures can be used. This provides an acceptable criteria for further study at lower temperatures.     

被动累积~(222)Rn-~(222)Rn探测器

本文采用 2只扩散杯 ,一只选择渗透率较大的滤膜 ,使2 2 2 Rn和2 2 0 Rn能很容易的进入。另一只选择渗透率较小的滤膜 ,该滤膜只允许2 2 2 Rn进入 ,半衰期较短的2 2 0 Rn被阻挡在外面。通过不同滤膜扩散率的差异 ,改变探测器的空气交换率 ,从而达到同时测量2 2 2 Rn和2 2 0 Rn的目的