Syntactic mismatches in machine translation

This paper addresses one of the central problems arising at the transfer stage in machine translation: syntactic mismatches, that is, mismatches between a source-language sentence structure and its equivalent target-language sentence structure. The level at which we assume the transfer to be carried out is the Deep-Syntactic Structure (DSyntS) as proposed in the Meaning-Text Theory (MTT). DSyntS is abstract enough to avoid all types of divergences that result either from restricted lexical co-occurrence or from surface-syntactic discrepancies between languages. As for the remaining types of syntactic divergences, all of them occur not only interlinguistically, but also intralinguistically; this means that establishing correspondences between semantically equivalent expressions of the source and target languages that diverge with respect to their syntactic structure is nothing else than paraphrasing. This allows us to adapt the powerful intralinguistic paraphrasing mechanism developed in MTT for purposes of interlinguistic transfer.     

Robust Space Time Receiver for CDMA-based Antenna Arrays

In this paper, we propose a new robust code division multiple access (CDMA) receiver of which weight vector is obtained by projecting the effective spatio-temporal signature waveform onto the signal subspace of the data covariance matrix. We verified our proposed algorithm by the field measured data obtained with a custom-built wideband CDMA test-bed. It will be shown that the proposed algorithm is robust to the signal mismatch.     

Effects of crack size and weld metal mismatch on the has cleavage toughness of wide plates

The heat affect zone (HAZ) is in many cases considered to be the most critical part of a weldment. In this paper, the effect of crack size and weld metal mismatch on the HAZ cleavage toughness of wide plate specimens with X-groove has been investigated by the J-Q-M theories and a simple micromechanism for cleavage fracture. Two crack sizes have been studied (a/w = 0.1 and 0.3). In the analyses, the HAZ yield strength is assumed to be higher than the base metal. For each crack size, weld metal local overmatch and local evenmatch with respect to the HAZ are considered. For a given global strain, the results indicate that weld metal overmatch and evenmatch yield the same crack tip loading in terms of J-integral for a/w = 0.3. For a/w = 0.1, overmatch gives lower crack tip loading than evenmatch. For a given crack tip loading, weld metal local evenmatch in general results in less effective crack tip loading than the overmatch. Overmatch is detrimental to HAZ toughness, but this detrimental effect becomes less significant when the crack size decreases.     

Studies on nucleation kinetics of InxGa1−xN/GaN heterostructures

Nucleation kinetics during the growth of In_xGa_1−xN on a GaN substrate have been studied. The behavior of nonequilibrium between the In_xGa_1−xN and the GaN substrate has been analyzed, and hence, the expression derived for the stress-induced supercooling/superheating has been numerically evaluated. The maximum amount of stress-induced supercooling is found to be 1.017 K at x=0.12. These values are incorporated in the classical heterogeneous nucleation theory. Using the regular solution model, the interfacial tension between the nucleus and substrate and, hence, the interfacial tension between nucleus and mother phase and thermodynamical potential of the compounds have been calculated. The amount of driving force available for the nucleation has been determined for different compositions and degrees of supercooling. It has been shown that the value of the interaction parameter of InN-GaN plays a dominant role in nucleation and growth kinetics of In_xGa_1−xN on a GaN substrate. These values have been used to evaluate the nucleation parameters. It is shown that the nucleation barrier for the formation of a In_xGa_1−xN nucleus on a GaN substrate is minimum in the range of x=0.12 to x=0.17, and it has been qualitatively proved that good quality In_xGa_1−xN on GaN can be grown only in the range 0<x≤0.2.     

NiTi形状记忆合金的相变温度滞后

用透射电镜、正电子湮没和电阻测量,研究了NiTi形状记忆合金的组织结构与相变滞后的关系结果表明,经不同制度时效处理的组织,其相变温度滞后大小的顺序是:片状马氏体>R相>束状马氏体。Ti_(11)Ni_(14)相质点周围的共格应力场对这些相的可逆转变起障碍作用。正电子湮没Doppler展宽能谱S参数值与试样的温度滞后值之间存在线性关系,从而确认Ti_(11)Ni_(14)相析出的错配位错密度及由此而建立的晶体中弹性应力场分布是决定NiTi合金相变温度滞后的主要因素。     

Creep-induced local lattice parameter changes in a monocrystalline nickel-base superalloy

The γ-γ lattice mismatch of specimens of the monocrystalline nickel-base superalloy SRR 99 has been measured by a high-resolution X-ray diffraction technique for the undeformed state and after high-tem-perature creep deformation. During creep deformation beyond the minimum creep rate (total strain =0.5%), the lattice mismatches, measured in and perpendicular to the [001] stress axis, respectively, un-dergo changes in opposite directions. This reflects the buildup of a complex deformation-induced triaxial state of internal stress in the phases y and γ. The overall resolved shear stresses that act in γ and y due to the combined action of the external and internal stresses are estimated, and the conditions under which cutting of the γ phase by dislocations should occur are discussed.     

Effect of MgO Addition on the Bondability and Interfacial Reaction between Dielectric and Glass-Ceramics for the Fabrication of Multi-Component Ceramic Substrates

Bondability and interfacial reaction between dielectric and insulator layers have been examined to obtain a basic understanding of bonding mechanisms. Lead-containing complex perovskite was used as a dielectric material. Two kinds of glass-ceramics were used as insulator material; lead borosilicate glass containing Al_2O3 (insulator A) and the same containing Al₂O₃ and M_gO (insulator B). Dielectric and insulator layers did not bond when insulator A was used. When insulator B was used, however, strong bonding was achieved between the two layers by firing the powder compacts at temperatures between 800° and 1000°C. Addition of M_gO to lead borosilicate glass increased the thermal expansion coefficient to that of the dielectric and enhanced the formation of reaction layers, resulting in good bonding. Two reaction layers were identified. The main reaction products were enstatite and bredigite for one layer contacting the dielectric, and enstatite and a compound with the same diffraction pattern as that of faujasite for the other layers contacting insulator B.     

CMOS图像传感器中分段电容DAC非理想因素研究

CMOS图像传感器信号处理中通常采用分段电容DAC产生斜坡参考电压。研究了分段电容DAC精确的电容失配及寄生与其转换精度的关系式。基于对分段电容DAC工作原理的研究,导出了电容失配及寄生模型;针对其分数桥接电容失配、各二进制电容间的失配及寄生电容问题进行了理论分析;对分段电容DAC进行非理想因素仿真,设计了一个采用分段电容DAC的10位单斜ADC并对其进行测试,仿真和测试结果均验证了理论分析的正确性。上述理论分析结果可作为分段电容DAC的设计指导。     

Carrier leakage and I/Q mismatch calibrated technique

The carrier leakage and I/Q mismatch calibrated technique based on the digital baseband for the direct conversion transmitter is described. The proposed technique only needs a calibration chain to detect mismatches, and then transmits them to the digital baseband, which completes the calibrated task. The proposed method is very simple in reducing die areas and power dissipation. Under TSMC 013μm CMOS technology simulation, the calibrated error of carrier leakage is less than 15％ and the error of I/Q mismatch is less than 65％．The measurement results indicate that I/Q amplitude mismatch is reflected at twice the input frequency. The calibrated chain gain range is 15dB with a 5dB step, and the bandwidth is 20MHz.