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1.
采用直流磁控溅射和后退火氧化工艺在p型GaAs单晶衬底上成功制备了n-VO_2/pGaAs异质结,研究了不同退火温度和退火时间对VO_2/GaAs异质结性能的影响,并分析其结晶取向、化学组分、膜层质量以及光电特性。结果表明,在退火时间2 h和退火温度693 K下能得到相变性能最佳的VO_2薄膜,相变前后电阻变化约2个数量级。VO_2/GaAs异质结在308 K、318 K和328 K温度下具有较好的整流特性,对应温度下的阈值跳变电压分别为6.9 V、6.6 V和6.2 V,该结果为基于VO_2相变特性的异质结光电器件的设计与应用提供了可行性。 相似文献
2.
Numerical simulation, using SILVACO-TCAD, is carried out to explain experimentally observed effects of different types of deep levels on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates. Two diodes were grown on (311)A and (211)A oriented GaAs substrates using Molecular Beam Epitaxy (MBE). Although, deep levels were observed in both structures, the measured capacitance–voltage characteristics show a negative differential capacitance (NDC) for the (311)A diodes, while the (211)A devices display a usual behaviour. The NDC is related to the nature and spatial distribution of the deep levels, which are characterized by the Deep Level Transient Spectroscopy (DLTS) technique. In the (311)A structure only majority deep levels (hole traps) were observed while both majority and minority deep levels were present in the (211)A diodes. The simulation, which calculates the capacitance–voltage characteristics in the absence and presence of different types of deep levels, agrees well with the experimentally observed behaviour. 相似文献
3.
A strongly electron deficient and high triplet energy host for blue emitters was developed by decorating a dibenzofuran modified biphenyl backbone structure with multiple CN units. Two hosts, 6,6′-bis(6-cyanodibenzo[b,d]furan-4-yl)-[1,1′-biphenyl]-3,3′-dicarbonitrile(CNDBF1) and 2,2′-bis(6-cyanodibenzo[b,d]furan-4-yl)-[1,1′-biphenyl]-4,4′-dicarbonitrile(CNDBF2), were derived from the CN decoration strategy for application in blue organic light-emitting diodes requiring high triplet energy host. They showed high triplet energy above 2.79 eV and acted as the electron transport type host based on the strong electron deficiency. The mixture of the CNDBF1 and CNDBF2 hosts with a hole transport type 3,3′-di(9H-carbazol-9-yl)-1,1′-biphenyl host performed as the exciplex host of a blue phosphor and accomplished high external quantum efficiency of 22.7% in the blue phosphorescent organic light-emitting diodes. 相似文献
4.
Dvoryankin V. F. Dikaev Yu. M. Kudryashov A. A. Sokolovskii A. A. 《Measurement Techniques》2003,46(8):806-809
A method is described for determining the instantaneous effective energy of x-ray tube brehmsstrahlung by means of two semiconductor detectors employing epitaxial GaAs structures and a measurement circuit, which together determine the effective energy with an error of 5% in the range 20–80 keV in the presence of nonlinearity in the detector response. 相似文献
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6.
Toshiharu Makino Hiromitsu Kato Sung-Gi Ri Yigang Chen Hideyo Okushi 《Diamond and Related Materials》2005,14(11-12):1995
Electrical properties of homoepitaxial diamond p–n+ junction of boron (B)-doped p-type layer and phosphorus-doped n-type layer on Ib (111) diamond single crystal have been characterized. Current–voltage characteristics show a clear rectifying property with rectification ratio of over 105 at ± 10 V. From capacitance–voltage characteristics, it is found that a spatial distribution of space-charge density Ni of the p–n+ junction is not uniform and Ni at a middle region of the space-charge layer formed at zero bias voltage is higher than that of other region of the space-charge layer. This peculiar characteristic can be explained by superposition of two effects; one is the deep dopant effect due to B atoms in the p-type layer, which makes to reduce Ni at around the edge of the space-charge layer formed at zero bias voltage. The other is the compensation of B acceptors by impurity atoms diffusing during the p–n+ interface and incorporating during the growth of p-type layer, which makes to reduce Ni at the vicinity of the p–n+ interface. 相似文献
7.
Chihiro J. Uchibori Y. Ohtani T. Oku Naoki Ono Masanori Murakami 《Journal of Electronic Materials》1997,26(4):410-414
Significant reduction of the contact resistance of In0.7Ga0.3As/Ni/W contacts (which were previously developed by sputtering in our laboratory) was achieved by depositing a W2N barrier layer between the Ni layer and W layer. The In0.7Ga0.3 As/Ni/W2N/W contact prepared by the radio-frequency sputtering technique showed the lowest contact resistance of 0.2 Ωmm after annealing
at 550°C for 10 s. This contact also provided a smooth surface, good reproducibility, and excellent thermal stability at 400°C.
The polycrystalline W2N layer was found to suppress the In diffusion to the contact surface, leading to improvement of the surface morphology and
an increase in the total area of the InxGa−As between metal and the GaAs substrate. These improvements are believed to reduce the contact resistance. 相似文献
8.
本文给出了一种新颖的微波有源滤波器的拓扑结构及综合方法,并对有源滤波电路进行了计算机模拟,结果表明本文给出的微波有源滤波器电路具有优良的的窄带滤波特性,通带内正向增益大于10dB,带外抑制大于30dB。 相似文献
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10.
A solar concentrator with one-axis tracking is being developed at our institute. This concentrator system achieves a high geometrical concentration ratio of 300 using a parabolic trough mirror and a three-dimensional second stage consisting of compound parabolic concentrators. The design of the system as well as the characterisation of the second stage is described in this paper. 相似文献