纳米加工和纳米电子器件

介绍了电子束曝光技术、EUV光刻技术和X射线光刻技术的进展;对各种纳米电子器件如单电子器件、共振隧穿器件和分子电子器件的研究现状及面临的主要挑战进行了讨论。     

基于原子力显微镜的碳纳米管焊接

在利用碳纳米管（CNT）制作纳米电子器件时,碳纳米管与金属电极的接触特性将决定器件性能.为此本文提出了一种利用原子力显微镜（AFM）进行碳纳米管焊接的新方法.仿真研究了探针电场的强度与分布,解释了焊接中电场产生的机理,进一步分析了偏压、探针-样品距离与探针悬臂梁偏转位移之间的关系;并通过这些优选的相关实验参数进行了焊接实验验证.实验结果表明,碳纳米管与电极间的接触电阻由2.86×106Ω减小至7.14×105Ω,并可实现碳纳米管在电极上的良好固定.     

碳纳米管的制备、修饰及其应用

简要介绍了碳纳米管的制备及其纯化技术，以及近年来碳纳米管修饰、管内填充方面的研究，并概述了碳纳米管在复合材料、发光材料、纳米器件方面的应用及其在固体基片上的定向组装。     

Towards Fully Quantum Mechanical 3D Device Simulations

We present a simulator for calculating, in a consistent manner, the realistic electronic structure of three-dimensional heterostructure quantum devices under bias and its current density close to equilibrium. The electronic structure is calculated fully quantum mechanically, whereas the current is determined by employing a semiclassical concept of local Fermi levels that are calculated self-consistently. We discuss the numerical techniques employed and present illustrative examples that are compared with quantum transport calculations. In addition, the simulator has been used successfully to study shape-dependent charge localization effects in self-assembled GaAs/InGaAs quantum dots.