首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   13105篇
  免费   1143篇
  国内免费   1048篇
电工技术   249篇
综合类   479篇
化学工业   3449篇
金属工艺   1408篇
机械仪表   764篇
建筑科学   124篇
矿业工程   106篇
能源动力   308篇
轻工业   436篇
水利工程   38篇
石油天然气   95篇
武器工业   96篇
无线电   2208篇
一般工业技术   3459篇
冶金工业   289篇
原子能技术   184篇
自动化技术   1604篇
  2024年   31篇
  2023年   347篇
  2022年   473篇
  2021年   555篇
  2020年   500篇
  2019年   485篇
  2018年   484篇
  2017年   555篇
  2016年   566篇
  2015年   431篇
  2014年   674篇
  2013年   738篇
  2012年   702篇
  2011年   1030篇
  2010年   648篇
  2009年   861篇
  2008年   682篇
  2007年   758篇
  2006年   741篇
  2005年   540篇
  2004年   504篇
  2003年   447篇
  2002年   443篇
  2001年   377篇
  2000年   271篇
  1999年   230篇
  1998年   191篇
  1997年   158篇
  1996年   146篇
  1995年   145篇
  1994年   128篇
  1993年   99篇
  1992年   82篇
  1991年   64篇
  1990年   49篇
  1989年   49篇
  1988年   26篇
  1987年   10篇
  1986年   18篇
  1985年   7篇
  1984年   15篇
  1983年   7篇
  1982年   8篇
  1981年   4篇
  1980年   5篇
  1979年   2篇
  1976年   2篇
  1972年   1篇
  1959年   2篇
  1951年   1篇
排序方式: 共有10000条查询结果,搜索用时 31 毫秒
1.
《Ceramics International》2021,47(19):27217-27229
Herein, an in-depth analysis of the effect of heat treatment at temperatures between 900 and 1500 °C under an Ar atmosphere on the structure as well as strength of Cansas-II SiC fibres was presented. The untreated fibres are composed of β-SiC grains, free carbon layers, as well as a small amount of an amorphous SiCxOy phase. As the heat-treatment temperature was increased to 1400 °C, a significant growth of the β-SiC grains and free carbon layers occurred along with the decomposition of the SiCxOy phase. Moreover, owing to the decomposition of the SiCxOy phase, some nanopores formed on the fibre surface upon heating at 1500 °C. The mean strength of the Cansas-II fibres decreased progressively from 2.78 to 1.20 GPa with an increase in the heat-treatment temperature. The degradation of the fibre strength can be attributed to the growth of critical defects, β-SiC grains, as well as the residual tensile stress.  相似文献   
2.
《Ceramics International》2022,48(20):29959-29966
High-purity SiC ceramic devices are applied in semiconductor industry owing to their outstanding properties. Nevertheless, it is difficult to densify SiC ceramics without any sintering additive even by HP sintering. In this work, high-purity and dense SiC ceramics were fabricated by HP sintering with very low amounts of sintering aids. Residual B content was only 556 ppm and relative density was more than 99.5%. Furthermore, thermal conductivity of as-prepared SiC ceramics was improved from 155 W m?1 K?1 to 167 W m?1 K?1 by increasing holding time and their plasma corrosion resistance was promoted in the meantime. The as-prepared high-purity SiC ceramics have broad application prospects in the field of semiconductor industry.  相似文献   
3.
Femtosecond (fs) lasers have been proved to be reliable tools for high-precision and high-quality micromachining of ceramic materials. Nevertheless, fs laser processing using a single-mode beam with a Gaussian intensity distribution is difficult to obtain large-area flat and uniform processed surfaces. In this study, we utilize a customized diffractive optical element (DOE) to redistribute the laser pulse energy from Gaussian to square-shaped Flat-Top profile to realize centimeter-scale low-damage micromachining on single-crystal 4H–SiC substrates. We systematically investigated the effects of processing parameters on the changes in surface morphology and composition, and an optimal processing strategy was provided. Mechanisms of the formation of surface nanoparticles and the removal of surface micro-burrs were discussed. We also examined the distribution of subsurface defects caused by fs laser processing by removing a thin surface layer with a certain depth through chemical mechanical polishing (CMP). Our results show that laser-induced periodic surface structures (LIPSSs) covered by fine SiO2 nanoparticles form on the fs laser-processed areas. Under optimal parameters, the redeposition of SiO2 nanoparticles can be minimized, and the surface roughness Sa of processed areas reaches 120 ± 8 nm after the removal of a 10 μm thick surface layer. After the laser processing, micro-burrs on original surfaces are effectively removed, and thus the average profile roughness Rz of 2 mm long surface profiles decreases from 920 ± 120 nm to 286 ± 90 nm. No visible micro-pits can be found after removing ~1 μm thick surface layer from the laser-processed substrates.  相似文献   
4.
In this study, AA7075 aluminum matrix composites reinforced with the combination of SiC, Al2O3, and B4C particles were fabricated by the liquid metal infiltration method. The effects of the relative ratio of B4C and Al2O3 particles on the microstructural, wear, and corrosion features of the composite samples were analyzed using XRD, light metal microscopy, SEM, EDS, Brinell hardness, ball-on-disc type tribometer, and potentiodynamic polarization devices. It was determined that infiltration occurred more successfully, and homogenously distributed particles with reduced porosity were obtained as the amount of Al2O3 increased. Worn surface studies revealed that the specimens were predominantly worn by abrasion and adhesion. The increase in B4C/Al2O3 ratio caused a decrease in the hardness and wear strength, whereas it increased the corrosion resistance.  相似文献   
5.
《Ceramics International》2022,48(1):744-753
The heat-resistance of the Cansas-II SiC/CVI-SiC mini-composites with a PyC and BN interface was studied in detail. The interfacial shear strength of the SiC/PyC/SiC mini-composites decreased from 15 MPa to 3 MPa after the heat treatment at 1500 °C for 50 h, while that of the SiC/BN/SiC mini-composites decreased from 248 MPa to 1 MPa, which could be mainly attributed to the improvement of the crystallization degree of the interface and the decomposition of the matrix. Aside from the above reasons, the larger declined fraction of the interfacial shear strength of the SiC/BN/SiC mini-composites might also be related to the gaps in the BN interface induced by the volatilization of B2O3·SiO2 phase, leading to a significant larger declined fraction of the tensile strength of the SiC/BN/SiC mini-composites due to the obvious expansion of the critical flaws on the fiber surface. Therefore, compared with the CVI BN interface, the CVI PyC interface has better heat-resistance at high temperatures up to 1500 °C due to the fewer impurities in PyC.  相似文献   
6.
Laser ablation of high-temperature ceramic coatings results in thermal residual stresses due to which the coatings fail by cracking and debonding. Hence, the measurement of such residual stresses during laser ablation process holds utmost importance from the view of performance of coatings in extreme conditions. The present research aims at investigating the effect of laser parameters such as laser pulse energy, scanning speed and line spacing on thermal residual stresses induced in tantalum carbide-coated graphite substrates. Residual stresses were measured using micro-Raman spectroscopy and correlated with Raman peak shifts. Transient thermal analysis was performed using COMSOL Multiphysics to model the single ablated track and residual stresses were reported at low, moderate and high pulse energy regimes. The results showed that the initial laser conditions caused higher tensile residual stresses. Moderate pulse energy regime comprised higher compressive residual stresses due to off centre overlapping of the laser pulses. Higher pulse energy (250 μJ), higher scanning speed (1000 mm/s) and moderate line spacing (20 μm) caused accumulation of tensile residual stresses during the final stage of laser ablation. The deviation of experimental residual stresses from COMSOL numerical model was attributed to unaccounted additional stresses induced during thermal spraying process and deformation potentials in the numerical model.  相似文献   
7.
Ni-based alloys are believed to be the most suitable brazing fillers for SiC ceramic application in a nuclear environment. However, graphite, which severely deteriorates the mechanical property of the joint, is inevitable when Ni reacts with SiC. In this paper, Different amounts of Zr powders are mixed with Inconel 625 powders to braze SiC at 1400 °C. When Zr addition reaches 40 wt%, the brazed seam confirms the absence of graphite. This research proves that Zr can avoid the graphite’s formation by suppressing Ni’s activity. The room-temperature shear strength of the joint with graphite’s absence is tested to be 81.97 MPa, which is almost three times higher than that of the joint with graphite. The interfacial reaction process and mechanism of the SiC joint are investigated and explained in this paper using thermodynamic calculations.  相似文献   
8.
This paper reports an investigation on the structure-properties correlation of trivalent metal oxide (Al2O3)-doped V2O5 ceramics synthesized by the melt-quench technique. XRD patterns confirmed a single orthorhombic V2O5 phase formation with increasing strain on the doping of Al2O3 in place of V2O5 in the samples estimated by Williamson-Hall analysis. FTIR and Raman investigations revealed a structural change as [VO5] polyhedra converts into [VO4] polyhedra on the doping of Al2O3 into V2O5. The optical band gap was found in a wide semiconductor range as confirmed by UV–visible spectroscopy analysis. The thermal and conductivity behavior of the prepared samples were studied using thermal gravimetric analysis (TGA) and impedance analyzer, respectively. All the prepared ceramics exhibit good DC conductivity (0.22–0.36 Sm-1) at 400 ?C. These materials can be considered for intermediate temperature solid oxide fuel cell (IT-SOFC)/battery applications due to their good conductivity and good thermal stability.  相似文献   
9.
Laminated Si3N4/SiCw ceramics were successfully prepared by tape casting and hot-pressing. Its mechanical properties were measured and the impact resistance was discussed. The toughness of the laminated Si3N4/SiCw ceramics was 13.5 MPa m1/2, which was almost 1.6 times that of Si3N4/SiCw composite ceramics, namely 8.5 MPa m1/2. Moreover, the indentation strength of laminated Si3N4/SiCw ceramics was not sensitive to increasing indentation loads and exhibited a rising R-curve behaviour, indicating that the laminated Si3N4/SiCw ceramics had excellent impact resistance. The improved toughness and impact resistance of laminated Si3N4/SiCw ceramics was attributed to the residual stress caused by a thermal expansion coefficient mismatch between the different layers, resulting in crack deflection and bridging of SiC whiskers in the interface layer, thus consuming a large amount of fracture work.  相似文献   
10.
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号