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排序方式: 共有234条查询结果,搜索用时 15 毫秒
1.
Effects of different carbon sources and C/N values on nonvolatile taste components of Pleurotus eryngii 下载免费PDF全文
Wen Li Xiaobei Li Yan Yang Feng Zhou Yanfang Liu Shuai Zhou Hailong Yu 《International Journal of Food Science & Technology》2015,50(11):2360-2366
Pleurotus eryngii, the second largest industrial cultivation mushroom in China, is usually cultivated on substrates mainly consisting of sawdust and corncob. In this study, experiments were performed to determine the effects of different carbon sources and C/N values on nonvolatile taste components of P. eryngii. The effects of different carbon sources on nonvolatile taste components levels revealed that sawdust was beneficial to high levels of crude protein, amino acids, 5′‐nucleotides and equivalent umami concentration, while corncob was beneficial to high contents of carbohydrate, polysaccharides and trehalose. At the similar C/N values, relatively higher sawdust content was beneficial to umami amino acid production, while relatively higher corncob content was beneficial to high contents of carbohydrate, polysaccharides and mannitol. Higher C/N value was beneficial to high levels of crude protein, amino acids, 5′‐nucleotides and equivalent umami concentration, while lower C/N value was beneficial to high contents of carbohydrate, polysaccharides and trehalose. These results provided information for P. eryngii fruit body industrial cultivation to obtain specific nonvolatile taste components with high levels. 相似文献
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四种国民常用饮水中非挥发性有机物及其致突变活性的比较研究 总被引:1,自引:0,他引:1
比较我国居民常用饮水种类自来水、净化水(自来水经净水器过滤)、凉开水(自来水经煮沸后冷却)、纯净水(自来水经以反渗透为主的多重工艺处理)的非挥发性有机物(NOP)污染状况及其致突变活性。结果表明,四种水中检测到的NOP种类分别为自来水39种,净化水40种,凉开水20种,纯净水8种;毛细色谱显示的NOP总丰面积值依次为5.62×109,5.57×109,2.65×109,1.87×109。四种水的移码型及碱基置换型致突变活性依次为:自来水>净化水>凉开水>纯净水,其中自来水在相当1L、2L、4L水量的剂量均为阳性致突变活性,而纯净水在同样的剂量均为阴性。 相似文献
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提出了一种适用于无源射频识别RFID电子标签中多次可编程MTP非易失性存储器NVM的新型电流灵敏放大器结构。该电路在不增加面积的情况下具有低功耗、高速度、高可靠性和高灵敏度的优越性能。基于GSMC 0.13μm CMOS工艺下的仿真结果表明,新型灵敏放大器在-40℃~80℃的环境下具有很高的读取速度,且能够工作在低电压(0.8 V)下。在1.2 V工作电压、27℃室温下电路的读出延时是10.5 ns,平均功耗为6.1 μW@25MHz,分辨率可达到33 nA。 相似文献
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Flexible Nonvolatile Transistor Memory with Solution‐Processed Transition Metal Dichalcogenides 下载免费PDF全文
Richard Hahnkee Kim Jinseong Lee Kang Lib Kim Suk Man Cho Dong Ha Kim Cheolmin Park 《Small (Weinheim an der Bergstrasse, Germany)》2017,13(20)
Nonvolatile field‐effect transistor (FET) memories containing transition metal dichalcogenide (TMD) nanosheets have been recently developed with great interest by utilizing some of the intriguing photoelectronic properties of TMDs. The TMD nanosheets are, however, employed as semiconducting channels in most of the memories, and only a few works address their function as floating gates. Here, a floating‐gate organic‐FET memory with an all‐in‐one floating‐gate/tunneling layer of the solution‐processed TMD nanosheets is demonstrated. Molybdenum disulfide (MoS2) is efficiently liquid‐exfoliated by amine‐terminated polystyrene with a controlled amount of MoS2 nanosheets in an all‐in‐one floating‐gate/tunneling layer, allowing for systematic investigation of concentration‐dependent charge‐trapping and detrapping properties of MoS2 nanosheets. At an optimized condition, the nonvolatile memory exhibits memory performances with an ON/OFF ratio greater than 104, a program/erase endurance cycle over 400 times, and data retention longer than 7 × 103 s. All‐in‐one floating‐gate/tunneling layers containing molybdenum diselenide and tungsten disulfide are also developed. Furthermore, a mechanically‐flexible TMD memory on a plastic substrate shows a performance comparable with that on a hard substrate, and the memory properties are rarely altered after outer‐bending events over 500 times at the bending radius of 4.0 mm. 相似文献
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Ferroelectrically Gated Atomically Thin Transition‐Metal Dichalcogenides as Nonvolatile Memory 下载免费PDF全文
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Simple,Inexpensive, and Rapid Approach to Fabricate Cross‐Shaped Memristors Using an Inorganic‐Nanowire‐Digital‐Alignment Technique and a One‐Step Reduction Process 下载免费PDF全文
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LiNbO_3∶Fe∶Ni晶体非挥发全息存储研究 总被引:1,自引:2,他引:1
采用三种不同的双光记录方案进行了LiNbO3∶Fe∶Ni晶体全息存储实验,详细研究了饱和衍射效率、固定衍射效率、动态范围和记录灵敏度,以及退火条件对记录的影响。结果表明,氧化LiNbO3∶Fe∶Ni晶体的饱和衍射效率、固定衍射效率和记录灵敏度比其他报道的双掺杂LiNbO3晶体高。结合掺杂能级图,理论分析了LiNbO3双掺杂晶体深陷阱中心能级的相对位置及其微观光学参量对全息记录性能的影响。LiNbO3∶Fe∶Ni晶体有望成为一种新的高效率非挥发全息存储材料。 相似文献
10.
n metal oxide semiconductor (MOS)capacitors fabricated by the former method, which are much better than 4.6 Ⅴ and no window remaining after one year observed in the latter. The former method is compatible with conventional CMOS technology. 相似文献