Activation of LSCF–YSZ interface by cobalt migration during electrolysis operation in solid oxide electrolysis cells

High-temperature water electrolysis through solid oxide electrolysis cells (SOEC) will play a key role in building a hydrogen economy in the future. However, the delamination between the air electrode and the electrolyte remains a critical issue to be addressed. Previously, it was hypothesized that Co migration may improve the catalytic activity of the SrZrO₃ second phase at the LSCF-YSZ interface, eventually leading to the delamination. In this work, the LSCF-YSZ interfaces sintered at different temperatures were examined in detail. The activation behaviors of the LSCF electrodes upon application with electrolysis current were characterized under different conditions. Further, samples containing purposely added SrZrO₃ interlayer with and without cobalt were fabricated and compared. The activation process is less significant for the sample with cobalt-added SrZrO₃ interlayer than the sample with pure SrZrO₃ layer, supporting the hypothesis that Co migration may lead to the activation behavior.     

Large domain-wall currents in epitaxial Au/BiFeO3/SrRuO3 thin-film capacitors with modulated oxygen vacancy and wall densities

Large domain wall (DW) conductivity in an insulating ferroelectric plays an important role in the future nanosensors and nonvolatile memories. However, the wall current was usually too small to drive high-speed memory circuits and other agile nanodevices requiring high output-powers. Here, a large domain-wall current of 67.8 μA in a high on/off ratio of ~4460 was observed in an epitaxial Au/BiFeO₃/SrRuO₃ thin-film capacitor with the minimized oxygen vacancy concentration. The studies from read current-write voltage hysteresis loops and piezo-response force microscope images consistently showed remaining of partially unswitched domains after application of an opposite poling voltage that increased domain wall density and wall current greatly. A theoretical model was proposed to explain the large wall current. According to this model, the domain reversal occurs with the appearance of head-to-head and tail-to-tail 180° domain walls (DWs), resulting in the formation of highly conductive wall paths. As the applied voltage increased, the domain-wall number increased to enhance the on-state current, in agreement with the measurements of current-voltage curves. This work paves a way to modulate DW currents within epitaxial Au/BiFeO₃/SrRuO₃ thin-film capacitors through the optimization of both oxygen vacancy and domain wall densities to achieve large output powers of modern domain-wall nanodevices.     

Organic Semiconducting Luminophores for Near-Infrared Afterglow,Chemiluminescence, and Bioluminescence Imaging

Optical imaging has played a pivotal role in deciphering in vivo bioinformatics but is limited by shallow penetration depth and poor imaging performance owing to interfering tissue autofluorescence induced by concurrent photoexcitation. The emergence of near-infrared (NIR) self-luminescence imaging independent of real-time irradiation has timely addressed these problems. There are two main kinds of self-luminescent agents, namely inorganic and organic luminophores. Inorganic luminophores usually suffer from long-term biotoxicity concerns resulting from potential heavy-metal ions leakage and nonbiodegradability, which hinders their further translational application. In contrast, organic luminophores, especially organic semiconducting luminophores (OSLs) with good biodegradable potential, tunable design, and outstanding optical properties, are preferred in biological applications. This review summarizes the recent progress of OSLs used in NIR afterglow, chemiluminescence, and bioluminescence imaging. Molecular manipulation and nanoengineering approaches of OSLs are discussed, with emphasis on strategies that can extend the emission wavelength from visible to NIR range and amplify luminescence signals. This review concludes with a discussion of current challenges and possible solutions of OSLs in the self-luminescence field.     

Revealing Electrical-Poling-Induced Polarization Potential in Hybrid Perovskite Photodetectors

Despite recent rapid advances in metal halide perovskites for use in optoelectronics, the fundamental understanding of the electrical-poling-induced ion migration, accounting for many unusual attributes and thus performance in perovskite-based devices, remain comparatively elusive. Herein, the electrical-poling-promoted polarization potential is reported for rendering hybrid organic–inorganic perovskite photodetectors with high photocurrent and fast response time, displaying a tenfold enhancement in the photocurrent and a twofold decrease in the response time after an external electric field poling. First, a robust meniscus-assisted solution-printing strategy is employed to facilitate the oriented perovskite crystals over a large area. Subsequently, the electrical poling invokes the ion migration within perovskite crystals, thus inducing a polarization potential, as substantiated by the surface potential change assessed by Kelvin probe force microscopy. Such electrical-poling-induced polarization potential is responsible for the markedly enhanced photocurrent and largely shortened response time. This work presents new insights into the electrical-poling-triggered ion migration and, in turn, polarization potential as well as into the implication of the latter for optoelectronic devices with greater performance. As such, the utilization of ion-migration-produced polarization potential may represent an important endeavor toward a wide range of high-performance perovskite-based photodetectors, solar cells, transistors, scintillators, etc.     

Diffuse color patterning using blended electrochromic polymers for proof‐of‐concept adaptive camouflage plaques

A study using three different pairs of electrochromic polymers (ECPs) synthesized onto plaques by means of a modified vapor phase polymerization (VPP) technique is presented. Restriction of the respective polymerization times, allowed both faster and slower polymerizing monomers to be controlled, and produced blended plaques with visually diffuse interfaces. The ECPs within the blended plaques retain their individual electrochromic behavior and when encapsulated into an electrochromic device, show outstanding optical switching performance with little degradation evident over 10,000 cycles, coupled with a switching time of the order of 1 second. Blends also allow multiple diffuse color changes within an electrochromic device, due to the difference in oxidation potentials of the individual ECPs, making them candidates for adaptive camouflage use. © 2015 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2015 , 132, 42158.     

大口径光学元件装夹转运结构设计及分析

为了实现大口径光学元件的安全装夹、转运,通过光学元件开槽与不开槽两种装夹方式的分析,得出开槽夹紧转运方式将带来微裂纹、应力集中、成本高等缺陷,提出了利用摩擦力克服光学零件的重力和惯性力的低应力装夹转运方案。通过对光学元件低应力夹紧结构设计,并利用有限元分析方法,得到不开槽装夹方式下,光学元件的最大主应力为1.11 MPa,最大切应力为0.73 MPa,远低于光学元件破坏的强度极限,且受力均匀,无应力集中现象。     

Impedance matching optimization of SiCf/Si3N4–SiOC composites for excellent microwave absorption properties

SiC fiber reinforced ceramic matrix composites (SiC_f-CMCs) are considered to be one of the most promising materials in the electromagnetic (EM) stealth of aero-engines, which is expected to achieve strong absorption and broad-band performance. Multiscale structural design was applied to SiC_f/Si₃N₄–SiOC composites by construction of micro/nanoscale heterogeneous interfaces and macro double-layer impedance matching structure. SiC_f/Si₃N₄–SiOC composites were fabricated by using SiC fibers with different conductivities and SiOC–Si₃N₄ matrices with gradient impedance structures to improve impedance matching effectively. Owing to its unique structure, SiC_f/Si₃N₄–SiOC composites (A3-composites) achieved excellent EM wave absorption performance with a minimum reflection coefficient (RC_min) of ?25.1 dB at 2.45 mm and an effective absorption bandwidth (EAB) of 4.0 GHz at 2.85 mm in X-band. Moreover, double-layer SiC_f/Si₃N₄–SiOC with an improved impedance matching structure obtained an RC_min of ?56.9 dB and an EAB of 4.2 GHz at 3.00 mm, which means it can absorb more than 90% of the EM waves in the whole X-band. The RC is less than ?8 dB at 2.6–2.8 mm from RT to 600 °C in the whole X-band, displaying excellent high-temperature absorption performance. The results provide a new design opinion for broad-band EM absorbing SiC_f-CMCs at high temperatures.     

以用户为中心的可见光通信协作传输中训练资源分配算法

以用户为中心的可见光通信协作传输是近年来出现的新架构,这导致虚拟小区之间出现重叠。为避免导频污染问题,每个虚拟小区中的光接入点(AP)或者虚拟小区中选择相同AP的用户发送的训练序列应该是正交的。针对可见光通信中以用户为中心的协作网络,研究训练资源的正交分配问题,提出了一种新的导频分配算法,联合导频分配和用户选择问题,以期最大限度地增加虚拟小区内可被接入的用户数。分析和仿真结果表明,该导频分配方案可以有效改善导频污染问题,提高训练资源利用率,并且相比已有的导频分配方案,性能有所改进。