Electrical characterization of homoepitaxial diamond p–n junction

Electrical properties of homoepitaxial diamond p–n⁺ junction of boron (B)-doped p-type layer and phosphorus-doped n-type layer on Ib (111) diamond single crystal have been characterized. Current–voltage characteristics show a clear rectifying property with rectification ratio of over 10⁵ at ± 10 V. From capacitance–voltage characteristics, it is found that a spatial distribution of space-charge density N_i of the p–n⁺ junction is not uniform and N_i at a middle region of the space-charge layer formed at zero bias voltage is higher than that of other region of the space-charge layer. This peculiar characteristic can be explained by superposition of two effects; one is the deep dopant effect due to B atoms in the p-type layer, which makes to reduce N_i at around the edge of the space-charge layer formed at zero bias voltage. The other is the compensation of B acceptors by impurity atoms diffusing during the p–n⁺ interface and incorporating during the growth of p-type layer, which makes to reduce N_i at the vicinity of the p–n⁺ interface.     

实现照明 LED 用 p-ZnO 中 Ag-2N高共掺粒子数分数机理

基于密度泛函理论的第一性原理方法,对六方纤锌矿结构的Zn O晶体,N、Ag分别掺杂Zn O,以及Ag-2N共掺杂Zn O晶体的几何结构分别进行了比较研究,在此基础上计算得到了未掺杂Zn O晶体和不同掺杂情况下Zn O晶体的能带结构、总体态密度、分波态密度和电荷布居数.结果显示:Ag-2N共掺杂Zn O具有较稳定的结构,能有效提高载流子粒子数分数,更容易得到稳定的p型Zn O.     

A single-phase p-type ac–ac converter with reduced components count and high boost factor

This paper proposes a new single-phase direct step-up ac–ac converter by modifying the p-type impedance source. It provides a high boost factor as well as high efficiency, while only six parts are required to design it, involving just two bidirectional power switches. A safe commutation method has been applied to power switches to make the converter snubber-free and high efficient. Input and output harmonic filters are no longer required since input and output currents variate continuously with small ripple and low total harmonic distortion (THD). The proposed topology only modulates the output voltage amplitude, not the phase and frequency, so the output frequency is identical to the input frequency and constant. Thus, it can be utilized in step-up conversion applications, like inductive power transmission from low ac voltage sources. Input and output have the same ground, which is a good protective feature. In this paper, the operating principle of the converter is demonstrated. Experimental results have been represented to evaluate the performance of the converter. For this purpose, an experimental prototype has been fabricated. Results are investigated and compared with other previous step-up ac–ac converters. Results confirm the theory, operating principle, and performance of the converter.     

氮化铟薄膜的p型掺杂和铁磁性研究进展

Ⅲ族氮化物半导体材料(InN、GaN、AlN)由于能带结构的特殊性,使其在光电器件与微波等领域得到广泛应用。其中,研究和发展InN材料及器件已被公认是占领光电信息技术领域战略至高点的重要途径,InN材料的p型导电以及室温铁磁性研究更是成为Ⅲ族氮化物中新颖的研究课题。首先简单介绍InN的晶体结构和制备方法,并分析其目前所遇到的挑战,然后重点阐述国际上关于InN在p型掺杂以及铁磁性领域的研究进展,同时介绍本课题组在该方面的研究,最后进行了简要总结和展望。     

p型透明导电氧化物薄膜的研究进展

p型透明导电膜是近来发现的一种新型的材料,在透明有源器件、传感器、透明电极和电路等方面具有广泛的潜在应用.近来在这方面的研究取得了一些突出的进展.本文主要综述了关于p型透明导电膜在材料、沉积工艺以及相关器件方面的研究进展.     

Radiation tolerant nano-FED biosensing for space application

A p-type polysilicon nanowire and silicon nano-channel combination based biosensor was developed, which has the potential to detect pathogens and thus protect crew safety aboard long-term manned flight programmes in high radiation space flights. This study outlines structures, which compose the biosensor, and demonstrates that the nano-device utilised herein is total dose radiation hardened. Highly doped polysilicon nanowires (30–100?nm) in nano-field-effect device (FED) were fabricated on silicon/silicon dioxide wafers and insulated with a thin polyimide layer. When the targeted gene, Escherichia coli DH5 alpha 16S rRNA, incubated on the device surface, the constant overall impedance increased or decreased depending on the electronic charge, mass and composition of the target molecule. All measurements were carried under 25 MeV S-Band linear accelerator followed by impedance measurements. Current sets of experiments show these nano-FED can form the basis of a robust, very sensitive handheld tool for pathogen detection in space application.     

电子束蒸发制备CuAlO2透明导电膜及光学性质

利用烧结的CuAlO2靶材运用电子束蒸发法沉积了p型CuAlO2薄膜样品.在空气中1000℃退火之后,薄膜样品出现了(006)定向结晶,且铜铝原子比满足化学计量.CuAlO2薄膜呈现了很好的透明性,500nm厚的薄膜样品在可见光范围透射率超过了80%.利用光谱分析,CuAlO2薄膜的光学禁带约为3.80eV,其平均折射率约为1.54,同其它方法制备的该薄膜的性能相近.薄膜样品室温电导率约为0.08S/cm.     

高功率脉冲磁控溅射制备ZnO薄膜的研究进展

氧化锌薄膜材料由于具有高电导率、良好的光学透过率、原料储存丰富、成本低廉的特点,被认为是最具有潜力的透明导电薄膜.特别是其宽禁带(3.37eV)和高达60meV的激子束缚能,使其在环境温度制备同质结发光器件、太阳能电池电子传输层具有巨大的应用前景.然而,传统制备方法难以实现薄膜质量的综合调控,存在p-ZnO稳定性差、制...     

高阻p型硅大面积四象限探测器的研制

采用PIN结构,研制出高阻p型硅大面积四象限探测器。详细介绍了器件结构设计和制作工艺。对器件响应时间、象限串扰、暗电流和响应度等参数进行了计算与分析。实验结果表明,器件响应度达到0.45A/W（λ=1.06μm）,暗电流小于50nA（Vr=135V）,象限间串扰低于2.5%。     

p型ZnO薄膜制备的研究进展

ZnO是一种性能优异的"低温蓝光工程"宽带隙Ⅱ-Ⅵ族半导体材料,但因本征施主缺陷和施主杂质引起的自补偿效应等使ZnO很难有效地实现n型向p型导电的转变。为此,阐述了ZnO薄膜的p型掺杂机理,介绍了国内外研究者在抑制自补偿、提高受主掺杂元素固溶度及寻求合适的受主掺杂元素等方面p型ZnO薄膜的最新研究进展。研究表明:增加ZnO材料中N原子固溶度的各种办法如施主-受主共掺杂、超声雾化气相淀积及本征ZnO薄膜在NH3气氛下后退火等和选择IB族中的Ag为受主掺杂元素是实现ZnO薄膜p型导电的有效措施。期望通过本综述能为国内ZnO基器件应用的p型ZnO薄膜的制备提供新思路。