dU/dt引发的MOSFET误导通分析

分析了MOSFET误导通产生的原因,分别从原理和理论推导两个方面作了分析,主要考虑了开关管中寄生参数对开关特性的影响。通过求解误导通发生的条件,得到哪些参数会导致误触发,最后给出了仿真。文中还提出如何避免MOSFET误导通产生,以及改进方法,对减少实际应用中MOSFET破坏性损坏有一定意义。     

Device-physics-based analytical model for SET pulse in sub-100 nm bulk CMOS Process

Through revising the process of charge collection for reversed drain-bulk junction,a bias-dependent SPICE model is proposed which includes the bipolar amplification effect that cannot be ignored in PMOS.The model can capture the plateau effect,and produce current and voltage pulse shapes and widths that are consistent with TCAD simulation.Considering the case of connecting load,it is still valid.For combination and sequential logic circuits,the SET pulsewidths and LET upset threshold from SPICE model are consistent with TCAD simulations.     

Design of the broadband microstrip array antenna for blast furnace surface monitoring

Aiming at the requirements of high-resolution imaging and high integration of the blast furnace radar,this paper presents a method for designing a wideband microstrip array antenna,which broadens the antenna bandwidth through the design of parasitic patches and air layers.By combining multi-input multi-output (MIMO) radar and synthetic aperture radar (SAR) imaging principles,a linear MIMO array is designed,and a near-field simulation imaging experiment is performed on the simulated feed line through the wave number domain imaging algorithm.Simulation results show that the gain of the main lobe of the antenna can reach 14.05 dBi,the reflection coefficient is less than -10 dB,the absolute bandwidth is 5.25 GHz,the operating frequency is 20.67~25.92 GHz,and the range resolution is increased to 3 cm compared with the existing blast furnace radar.The average error of the azimuth direction of the simulated material line imaging is 0.008 m,and the range direction is 0.0011 m.Compared with the traditional microstrip array antenna,this antenna effectively widens the bandwidth,and the range resolution is higher than that of the traditional blast furnace radar.It can accurately obtain the shape information on the simulated material line,and has an engineering application value for blast furnace surface monitoring.     

考虑寄生参数的隔离型双有源桥DC-DC变换器的开关开路故障分析与容错控制策略

双有源桥(DAB)DC-DC变换器开关管的驱动电路故障导致开关开路故障(OCSF),这使得DAB系统拓扑对称性缺失、高频电压和电流发生畸变和直流偏置,进而对系统的可靠性和长期运行稳定性造成不良影响.对此,研究DAB开关管和高频变压器寄生参数对OCSF后系统运行状态的影响,以完善DAB故障分析体系.针对OCSF问题,提出一种基于对称拓扑和对偶原理的故障容错策略,通过闭锁开关使系统运行拓扑恢复对称,并在此基础上提出一种不改变控制器参数、只需改变控制器输出饱和参数的实用控制方法,并在理论上讨论了该方法的可行性.最后,通过实验验证了OCSF模态分析及所提容错控制策略的正确性.     

The haustorium and the chemistry of host recognition in parasitic angiosperms

Two parasitic angiosperms,Agalinis purpurea (Scrophulariaceae) andStriga asiatica (Scrophulariaceae), are compared as to the chemical recognition events involved in host selection.Agalinis is a hemiparasite which can mature to seed-set without a host, whereasStriga is a holoparasite and survives for only a very limited time without a host. Both parasites, however, attach to a host through a specialized organ known as the haustorium and regulate the development of this organ through the recognition of chemical factors from host plants. We now describe the discovery of 2,6-dimethoxy-p-benzoquinone (2,6-DMBQ) as an haustoria-inducing principle fromSorghum root extracts. Our investigation of this compound has led us to suggest that one level of host recognition in these parasitic plants is mediated through their enzymatic digestion of the host root surface. Degradation of surface components liberates quinonoid compounds, such as 2,6-DMBQ, which in turn trigger haustorial development.     

CMOS图像传感器中分段电容DAC非理想因素研究

CMOS图像传感器信号处理中通常采用分段电容DAC产生斜坡参考电压。研究了分段电容DAC精确的电容失配及寄生与其转换精度的关系式。基于对分段电容DAC工作原理的研究,导出了电容失配及寄生模型;针对其分数桥接电容失配、各二进制电容间的失配及寄生电容问题进行了理论分析;对分段电容DAC进行非理想因素仿真,设计了一个采用分段电容DAC的10位单斜ADC并对其进行测试,仿真和测试结果均验证了理论分析的正确性。上述理论分析结果可作为分段电容DAC的设计指导。     

基于PSP的MOSFET射频建模

基于PSP模型提出一种新的RF-MOSFET模型。针对实际器件的物理结构,解析提取了RF条件下MOSFET的寄生参量。最终,将模型应用到某工艺线一共源连接n-MOSFET上,在保证PSP精确拟合直流特性的前提下,在高达40GHz的频率下对S参数的仿真和测试结果进行比较,具有一定的精度。     

面向高精度寄生参数提取与时延分析的集成电路版图数据转换方法

为了进一步提高集成电路互连寄生参数提取和电路时延分析的准确性,实现基于准确场求解器的线网寄生参数提取,提出一种快速、准确的集成电路版图数据转换方法.该方法读入二维GDSII版图数据和垂直工艺信息,基于一种扫描线算法判断导体块之间是否连接或重叠;然后利用链表、并查集等数据结构有效地描述三维互连结构及导体间连通关系,为后续电容提取和互连时延分析提供必要信息;最后输出电容提取场求解器所需的三维互连结构数据.基于实际版图的实验结果表明,文中方法比基于多边形两两判断的算法快4~7倍,且加速比随处理版图规模的增大而增大;该方法整体上具有O(nlog n)的时间复杂度,其中n为导体块数目,能够快速处理含1万块以上导体的大规模集成电路设计版图.     

纳米MOSFET寄生电阻模型分析

随着器件尺寸的缩小,寄生电阻对器件性能的影响不可忽视,为准确预测器件的寄生电阻并了解器件参数对寄生电阻的影响,需要有准确的寄生电阻模型。该文分析了短沟道寄生电阻模型,研究了短沟道寄生电阻模型在栅压较小时与模拟结果存在较大误差的原因,并对模型进行了改进。最后分析了器件参数对寄生电阻的影响,提出未来减小寄生电阻需要和可能采取的措施。     

用于研究专家系统的另一神模型──判别树及其寄生树

本文提出的判别树是一种既系统又直观地描述判别思路的模型,寄生树是一种用来判定判别树中结点的子特征的判别树。在专家系统的研究中,应用本模型有三个优点：①可有条理地描述、整理复杂的分类判别知识;②易于转换出相应的产生式规则或框架形式的知识库;③能清晰直观地指导设计高效的判别推理机。