钇离子注入锆的动电位极化曲线研究

通过对锆表面进行不同剂量的钇离子注入及对电位极化曲线的测量，分析了钇离子注入对锆电化学行为的影响。结果表明：钇离子注入能明显地提高锆在酸性、中性及碱性环境中的耐腐蚀性能。用X光电子能谱(XPS)分析了离子注入样品表层的成分与价态，进而探讨了钇离子注入表面改性的机理。     

Valence band density of states of small cobalt particles on Si(111) substrate

Small Co particles were prepared by sputter etching of a 4–5 nm thick island-like Co film deposited on Si(111) substrate. The density of states (DOS) of the valence band was measured by means of ultraviolet photoemission (UPS) during the sputter etching to monitor the formation of small Co particles. It was found that at a given thickness of the Co island the Fermi level was shifted by 1.8-1.9 eV toward higher binding energy and theDOS decreased or no states were detectable at the Fermi level. This effect was explained by the formation of small Co particles with electronic structure which is significantly different from that of the bulk Co.     

Advanced Characterization and Optimization of NiOx:Cu-SAM Hole-Transporting Bi-Layer for 23.4% Efficient Monolithic Cu(In,Ga)Se2-Perovskite Tandem Solar Cells

The performance of five hole-transporting layers (HTLs) is investigated in both single-junction perovskite and Cu(In, Ga)Se₂ (CIGSe)-perovskite tandem solar cells: nickel oxide (NiO_x,), copper-doped nickel oxide (NiO_x:Cu), NiO_x+SAM, NiO_x:Cu+SAM, and SAM, where SAM is the [2-(3,-6Dimethoxy-9H-carbazol-9yl)ethyl]phosphonic acid (MeO-2PACz) self-assembled monolayer. The performance of the devices is correlated to the charge-carrier dynamics at the HTL/perovskite interface and the limiting factors of these HTLs are analyzed by performing time-resolved and absolute photoluminescence ((Tr)PL), transient surface photovoltage (tr-SPV), and X-ray/UV photoemission spectroscopy (XPS/UPS) measurements on indium tin oxide (ITO)/HTL/perovskite and CIGSe/HTL/perovskite stacks. A high quasi-Fermi level splitting to open-circuit (QFLS-V_oc) deficit is detected for the NiO_x-based devices, attributed to electron trapping and poor hole extraction at the NiO_x-perovskite interface and a low carrier effective lifetime in the bulk of the perovskite. Simultaneously, doping the NiO_x with 2% Cu and passivating its surface with MeO-2PACz suppresses the electron trapping, enhances the holes extraction, reduces the non-radiative interfacial recombination, and improves the band alignment. Due to this superior interfacial charge-carrier dynamics, NiO_x:Cu+SAM is found to be the most suitable HTL for the monolithic CIGSe-perovskite tandem devices, enabling a power-conversion efficiency (PCE) of 23.4%, V_oc of 1.72V, and a fill factor (FF) of 71%, while the remaining four HTLs suffer from prominent V_oc and FF losses.     

Influence of aluminum ions implanted on oxidation behavior of ZIRLO alloy at 500 °C

The beneficial effect of aluminum ion implantation on the oxidation behavior of ZIRLO alloy at 500 °C has been studied. ZIRLO alloy specimens were implanted with aluminum ions with fluence range from 1×10¹⁶ to 1×10¹⁸ ion/cm², using a MEVVA source at an extraction voltage of 40 kV at maximum temperature of 380 °C. The weight gain curves were measured after being oxidized in the air at 500 °C for 120 min, which showed that a significant improvement was achieved in the oxidation behavior of ZIRLO alloy implanted with aluminum compared with that of the virgin ZIRLO alloy. It has been obviously found that when the fluence is 1×10¹⁸ ion/cm², the oxidization of the implanted ZIRLO alloy is reduced into 30% of the virgin ZIRLO alloy.     

Te concentration dependent photoemission and inverse-photoemission study of FeSe1?xTex

We have characterized the electronic structure of FeSe_1−xTe_x for various x values using soft x-ray photoemission spectroscopy (SXPES), high-resolution photoemission spectroscopy (HRPES) and inverse photoemission spectroscopy (IPES). The SXPES valence band spectral shape shows that the 2 eV feature in FeSe, which was ascribed to the lower Hubbard band in previous theoretical studies, becomes less prominent with increasing x. HRPES exhibits systematic x dependence of the structure near the Fermi level (E_F): its splitting near E_F and filling of the pseudogap in FeSe. IPES shows two features, near E_F and approximately 6 eV above E_F; the former may be related to the Fe 3d states hybridized with chalcogenide p states, while the latter may consist of plane-wave-like and Se d components. In the incident electron energy dependence of IPES, the density of states near E_F for FeSe and FeTe has the Fano lineshape characteristic of resonant behavior. These compounds exhibit different resonance profiles, which may reflect the differences in their electronic structures. By combining the PES and IPES data the on-site Coulomb energy was estimated at 3.5 eV for FeSe.     

Side-group engineering: The influence of norbornadienyl substituents on the properties of ethynylated pentacene and tetraazapentacene

The chemical modifications of 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-PEN) and 6,13-bis(triisopropylsilylethynyl)-5,7,12,14-tetraazapentacene (TIPS-TAP) by introduction of a large norbornadienyl substituent at the silyl atom of the side chain were examined and their effect on the charge transport properties in organic field-effect transistors (OFETs) was investigated. While the introduction of the norbornadienyl substituent resulted in only small changes in the crystallographic packing of these materials and did not affect the optical and electronic properties, the effect on the charge carrier mobility is significant. The hole mobility for the norbornadienyl substituted pentacene (Nor-PEN) is increased compared to similarly prepared TIPS-PEN devices, reaching up to 0.75 cm²/Vs. On the other hand, the electron mobility of the tetraaza derivative (Nor-TAP) is reduced by an order of magnitude compared to its parent TIPS-TAP. The strong effect of the norbornadienyl substitution on the charge carrier mobilities can be explained by the calculation of the transfer integrals and the microstructure of the resulting films of the Nor-derivatives.     

Electronic structure of stable n-type semiconducting molecular complex (diC8-BTBT)(TCNQ) studied by ultraviolet photoemission and inverse photoemission spectroscopy

The electronic structure of a semiconducting mixed-stack charge transfer (CT) complex composed of a 2,7-dialkyl[1]benzothieno[3,2-b][1] benzothiophene (diC₈-BTBT) electron donor and a tetracyanoquinodimethane (TCNQ) electron acceptor, (diC₈-BTBT)(TCNQ), was studied by ultraviolet photoemission spectroscopy and inverse photoemission spectroscopy. Compared with its components, the frontier electronic states observed for the (diC₈-BTBT)(TCNQ) complex showed a large stabilization that originates from the reconstruction of electronic states by intermolecular donor-acceptor CT interactions. We discuss how the frontier electronic states of the complex are formed from those of the individual component molecules, and clarify the origin of the air-stable n-type organic field-effect transistor characteristics that the material exhibits when it is used as a channel semiconductor.     

Silicene Nanoribbons on an Insulating Thin Film

Silicene, a new 2D material has attracted intense research because of the ubiquitous use of silicon in modern technology. However, producing free-standing silicene has proved to be a huge challenge. Until now, silicene could be synthesized only on metal surfaces where it naturally forms strong interactions with the metal substrate that modify its electronic properties. Here, the authors report the first experimental evidence of silicene nanoribbons on an insulating NaCl thin film. This work represents a major breakthrough, for the study of the intrinsic properties of silicene, and by extension to other 2D materials that have so far only been grown on metal surfaces.     

Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy

In this report, self-organized GaN nanodots have been grown on Si (111) by droplet epitaxy method, and their density can be controlled from 1.1 × 10¹⁰ to 1.1 × 10¹¹ cm^-2 by various growth parameters, such as substrate temperatures for Ga droplet formation, the pre-nitridation treatment of Si substrate, the nitridation duration for GaN crystallization, and in situ annealing after GaN formation. Based on the characterization of in situ RHEED, we can observe the surface condition of Si and the formation of GaN nanodots on Si. The surface nitridaiton treatment at 600°C provides a-SiNx layer which makes higher density of GaN nanodots. Crystal GaN nanodots can be observed by the HRTEM. The surface composition of GaN nanodots can be analyzed by SPEM and μ-XPS with a synchrotron x-ray source. We can find GaN nanodots form by droplet epitaxy and then in situ annealing make higher-degree nitridation of GaN nanodots.