铝薄膜CMP影响因素分析

提出了在碱性抛光液中铝薄膜化学机械抛光的机理模型,对抛光液的pH值、磨料、氧化剂浓度对过程参数的影响做了一些试验分析。试验结果表面粗糙度的铝薄膜所需的最优化CMP过程参数:硅溶胶粒径为15～20nm,pH值为10.8～11.2,氧化剂浓度为2.5%～3%。     

Pad effects on material-removal rate in chemical-mechanical planarization

The role of a porous pad in controlling material-removal rate (MRR) during the chemical-mechanical planarization (CMP) process has been studied numerically. The numerical results are used to develop a phenomenological model that correlates the forces on each individual abrasive particle to the applied nominal pressure. The model provides a physical explanation for the experimentally observed domains of pressure-dependent MRR, where the pad deformation controls the load sharing between active-abrasive particles and direct pad-wafer contact. The predicted correlations between MRR and slurry characteristics, i.e., particle size and concentration, are in agreement with experimentally measured trends reported by Ouma¹ and Izumitani.²     

无线传感器网络基于连通性的平面化算法

构建平面拓扑结构是无线传感器网络中一个重要的问题,它是设计许多高效网络协议的基础。传感器网络中许多重要的协议和应用都依赖于平面拓扑结构,比如著名的地理路由协议GPSR、GOAFR等。目前的平面化技术往往都需要网络中节点具有精确的位置测量信息。精确的位置或测距信息在资源受限的传感器网络中往往很难得到,因此基于位置的平面化技术的可应用性受到了很大的限制。设计有效的位置无关的平面化算法成为目前平面化技术研究面临的重要问题。本文提出了一种新的位置无关的分布式平面化算法。该方法仅基于网络的通讯连接关系信息,且运行复杂度低,便于分布式执行。本文通过证明确保所构建拓扑的平面性,并通过仿真实验验证了算法在随机生成网络中的有效性。     

碱性阻挡层抛光液中ULK介质抛光性能的研究

研究了化学机械抛光(CMP)过程中抛光液的SiO₂磨料质量分数和表面活性剂对多孔SiOCH薄膜(ULK介质)介电常数(k)及抛光速率的影响。所用抛光液(pH=10)主要由0%~4%(质量分数,下同)SiO₂、0.075%H₂O₂、1%邻苯二甲酸氢钾和不同质量浓度的表面活性剂组成,其中表面活性剂为非离子表面活性剂脂肪醇聚氧乙烯醚(AEO-9和AEO-15)、阴离子表面活性剂十二烷基硫酸铵(ADS)和两亲性非离子表面活性剂辛基苯酚聚氧乙烯醚(OP-50)。结果表明,磨料质量分数的增大会使ULK介质的去除速率和k值都增大。聚醚类表面活性剂都能在CMP过程中很好地保护ULK介质表面,降低其去除速率,OP-50的效果尤其好。当采用2%SiO₂+0.075%H₂O₂+1%KHP+200 mg/L OP-50的抛光液进行CMP时,ULK介质的去除速率为5.2 nm/min,k值增幅低于2%,Cu和Co的去除速率基本不变。     

硅通孔化学机械平坦化中铜去除的电化学与选择性研究

利用极化曲线测量法研究了甘氨酸和过氧化氢浓度及pH对硅通孔(TSV)化学机械平坦化(CMP)中铜腐蚀的影响。结果表明:甘氨酸对铜的腐蚀随其浓度增大而增强;随着过氧化氢浓度增大,铜腐蚀电位逐渐增大;在p H为10时铜的腐蚀效果最佳。CMP实验表明,在不同浓度的甘氨酸和过氧化氢之下,抛光速率可调,达1.9~5.8μm/min,铜表面粗糙度为5~29 nm,铜钽去除速率比为20~50。     

Electrochemical impedance characteristics of Ta/Cu contact regions in polishing slurries used for chemical mechanical planarization of Ta and Cu: considerations of galvanic corrosion

The contact areas between Cu and Ta of a Cu interconnect can be susceptible to galvanic corrosion during chemical mechanical planarization (CMP) in polishing slurries capable of supporting ionic conduction. In the present work, we probe this effect at a partially Cu-covered Ta disk, by combining electrochemical impedance spectroscopy with potentiodynamic polarization and galvanic current measurements in two slurry solutions commonly used in CMP of Ta and Cu. The results of these measurements are compared with those for a Cu disk and a (Cu-free) Ta disk. The impedance data for the Cu-decorated Ta sample show negative impedance values at certain regions of the impedance spectra, whereas the individual Cu and Ta electrodes are free of this effect. The results are examined and explained from considerations of galvanic corrosion at the Ta/Cu bordering regions in contact with the slurry liquid.     

A new neural network algorithm for planarization problems

To deal with the planarization problem widely used in many applications including routing very-large-scale integration （VLSI） circuits, this paper points out that only when its vertices are arranged in some specific order in a line can a planar graph be embedded on a line without any cross connections or cross edges. Energy function is proposed to meet the need of embedding a graph on a single line and route it correctly. A Hopfield network is designed according to the proposed energy function for such embedding and routing. The advantage of the proposed method is that it not only can detect if a graph is a planar one or not, but also can embed a planar graph or the maximal planar subgraph of a non-planar graph on a single line. In addition, simulated annealing is employed for helping the network to escape from local minima during the running of the Hopfield network. Experiments of the proposed method and its comparison with some existent conventional methods were performed and the results indicate that the proposed method is of great feasibility and effectiveness especially for the planarization problem of large graphs.     

MOLECULAR APPROACH TO MATERIAL DETACHMENT MECHANISM DURING CHEMICAL MECHANICAL PLANARIZATION

Mechanistic numerical analysis and molecular dynamics (MD) simulation are employed to understand the material detachment mechanism associated with chemical mechanical polishing. We investigate the mechanics of scratch intersection mechanism to obtain a characteristic length scale and compare the theoretical predictions with previous experimental observations on ductile copper discs at the micro-scale. First, an analytical model is developed based on mechanics of materials approach. The analytical model includes the effects of strain hardening during material removal as well as the geometry of indenter tip. In the next step, molecular simulations of the scratch intersection are performed at the atomistic scale. The embedded atom method (EAM) is utilized as the force field for workpiece material and a simplified tool-workpiece interaction is assumed to simulate material removal through scratch intersection mechanism. Both models are utilized to predict a characteristic length of material detachment related to material removal during scratch intersection. The predictions from two approaches are compared with experimental observations in order to draw correlations between experiment and simulation. The insights obtained from this work may assist in understanding the mechanism for chemical mechanical planarization (CMP), and even be applied to other different machining and polishing events.     

碱性铜粗抛液中氧化剂对化学机械平坦化的影响

针对不合腐蚀抑制剂苯并三氮唑(BTA)的碱性铜粗抛液,通过对3英寸(1英寸=2.54 cm)铜片上的动态抛光速率和静态腐蚀速率的研究来模拟评估氧化剂对晶圆表面平坦化的影响.在12英寸铜镀膜片和TM1图形片上分别研究氧化剂体积分数对表面平坦化的影响.实验结果表明:动态抛光速率和静态腐蚀速率均随着氧化剂体积分数的增加先逐渐增大,达到最大值,然后下降,趋于平缓.片内非均匀性和剩余高低差均随H2O2体积分数的增加,先呈下降趋势,后缓慢上升.当氧化剂体积分数为3％时,动态去除速率(vRR)为398.988 nm/min,静态腐蚀速率vER为6.834 nm/min,vRR/vER比值最大,片内非均匀性最小为3.82％,台阶高低差最小为104.6 nm/min,此时晶圆片有较好的平坦化效果.     

一种CMP试验装置的研制

通过机械加工使硬脆材料达到亚微米级的平面度,纳米级的粗糙度是非常困难的,而广泛应用于Ic加工领域的化学机械抛光(CMP)则能够实现工件的高精度加工要求.为此,设计了一台高精度的CMP试验装置,该装置用触摸屏完成人机对话,PLC作为整个测控系统的核心控制部分,通过接1:2完成数字、模拟信号的采集和对执行机构的控制,结构上具有结构简洁、控制方便的特点.在该装置上加工的直径100mm的不锈钢工件,平面度和粗糙度均达到或超过了设计要求.