Revealing Electrical-Poling-Induced Polarization Potential in Hybrid Perovskite Photodetectors

Despite recent rapid advances in metal halide perovskites for use in optoelectronics, the fundamental understanding of the electrical-poling-induced ion migration, accounting for many unusual attributes and thus performance in perovskite-based devices, remain comparatively elusive. Herein, the electrical-poling-promoted polarization potential is reported for rendering hybrid organic–inorganic perovskite photodetectors with high photocurrent and fast response time, displaying a tenfold enhancement in the photocurrent and a twofold decrease in the response time after an external electric field poling. First, a robust meniscus-assisted solution-printing strategy is employed to facilitate the oriented perovskite crystals over a large area. Subsequently, the electrical poling invokes the ion migration within perovskite crystals, thus inducing a polarization potential, as substantiated by the surface potential change assessed by Kelvin probe force microscopy. Such electrical-poling-induced polarization potential is responsible for the markedly enhanced photocurrent and largely shortened response time. This work presents new insights into the electrical-poling-triggered ion migration and, in turn, polarization potential as well as into the implication of the latter for optoelectronic devices with greater performance. As such, the utilization of ion-migration-produced polarization potential may represent an important endeavor toward a wide range of high-performance perovskite-based photodetectors, solar cells, transistors, scintillators, etc.     

Analysis of the detectivity for triple-layer heterojunction GaSb/GaInAsSb infrared detectors

In this paper, the detectivity is calculated and analyzed with the front-or backside illuminated case for both N-GaSb/p₂-Ga_0.8In_0.2As_0.19Sb_0.81/p₁-Ga_0.9In_0.1As_0.09Sb_0.91 and N₁-GaSb/n₂-Ga_0.9In_0.1As_0.09Sb_0.91/p-Ga_0.8In_0.2As_0.19Sb_0.81 infrared photovoltaic detectors, respectively. The analysis results show that the main absorption appears in the p-type Ga_0.8In_0.2As_0.19Sb_0.81 material with either front- or backside illuminated case for above two structures. In each structure, the carrier concentration obviously affects the detectivity. The carrier concentration in the wide-bandgap material for the isotype heterojunction should be reduced as low as possible to reduce the tunneling rate at the isotype heterointerface. Moreover, the change of the detectivity with the p-side surface recombination velocity for the N₁-n₂-p structure is more sensitive than that with the p₁-side surface recombination velocity for the N-p₂-p₁ structure. In the N-p₂-p₁ structure with the incident light from the p₁-side surface, two-color detection is achieved.     

混合集成型光学拾音器的设计与制作

通过混合集成型结构光学拾音器的光学设计和芯片设计，制作了包含微光学棱镜，光电探测器和信号放大电路的混合集成型光学拾音器。经过测试，发现有较好的信号输出特性，表明混合集成型光学拾音器已基本研制成功。     

Photomultiplication-Type Organic Photodetectors with High EQE-Bandwidth Product by Introducing a Perovskite Quantum Dot Interlayer

A photomultiplication (PM)-type organic photodetector (OPD) that exploits the ionic motion in CsPbI₃ perovskite quantum dots (QDs) is demonstrated. The device uses a QD monolayer as a PM-inducing interlayer and a donor–acceptor bulk heterojunction (BHJ) layer as a photoactive layer. When the device is illuminated, negative ions in the CsPbI₃ QD migrate and accumulate near the interface between the QDs and the electrode; these processes induce hole injection from the electrode and yield the PM phenomenon with an external quantum efficiency (EQE) >2000% at a 3 V applied bias. It is confirmed that the ionic motion of the CsPbI₃ QDs can induce a shift in the work function of the QD/electrode interface and that the dynamics of ionic motion determines the response speed of the device. The PM OPD showed a large EQE-bandwidth product >10⁶ Hz with a −3 dB frequency of 125 kHz at 3 V, which is one of the highest response speeds reported for a PM OPD. The PM-inducing strategy that exploits ionic motion of the interlayer is a potential approach to achieving high-efficiency PM OPDs.     

High-Resolution and Stable Ruddlesden–Popper Quasi-2D Perovskite Flexible Photodetectors Arrays for Potential Applications as Optical Image Sensor

The development of an efficient fabrication route to achieve high-resolution perovskite pixel array is key for large-scale flexible image sensor devices. Herein, a high-resolution and stable 10 × 10 flexible PDs array based on formamidinium(FA⁺) and phenylmethylammonium (PMA⁺) quasi-2D (PMA)₂FAPb₂I₇ (n = 2) perovskite is demonstrated by developing SiO₂-assisted hydrophobic and hydrophilic treatment process on polyethylene terephthalate substrate. By introducing Au nanoparticles (Au NPs),  the perovskite film quality is improved and grain boundaries are reduced. The mechanism by which Au NPs upgrade the photoelectric quality of perovskite is mainly revealed by glow discharge-optical emission spectroscopy (GD-OES) and grazing-incidence wide-angle X-ray scattering (GIWAXS). To further improve the photoelectric performance of the devices, a post-treatment strategy with formamidinium chloride (FACl) is used . The optimized flexible PDs arrays show excellent optoelectronic properties with a high responsivity of 4.7 A W⁻¹, a detectivity of 6.3 × 10¹² Jones, and a broad spectral sensitivity. The device also exhibits excellent electrical stability even under severe bending and excellent flexural strength, as well as excellent environmental stability. Finally, the integrated flexible PDs arrays are used as sensor pixels in an imaging system to obtain high-resolution imaging patterns, demonstrating the imaging capability of the PDs arrays.     

Optoelectronic Synapses and Photodetectors Based on Organic Semiconductor/Halide Perovskite Heterojunctions: Materials,Devices, and Applications

Both photodetectors (PDs) and optoelectronic synaptic devices (OSDs) are optoelectronic devices converting light signals into electrical responses. Optoelectronic devices based on organic semiconductors and halide perovskites have aroused tremendous research interest owing to their exceptional optical/electrical characteristics and low-cost processability. The heterojunction formed between organic semiconductors and halide perovskites can modify the exciton dissociation/recombination efficiency and modulate the charge-trapping effect. Consequently, organic semiconductor/halide perovskite heterojunctions can endow PDs and OSDs with high photo responsivity and the ability to simulate synaptic functions respectively, making them appropriate for the development of energy-efficient artificial visual systems with sensory and recognition functions. This article summarizes the recent advances in this research field. The physical/chemical properties and preparation methods of organic semiconductor/halide perovskite heterojunctions are briefly introduced. Then the development of PDs and OSDs based on organic semiconductor/halide perovskite heterojunctions, as well as their innovative applications, are systematically presented. Finally, some prospective challenges and probable strategies for the future development of optoelectronic devices based on organic semiconductor/halide perovskite heterojunctions are discussed.     

Boosted Photocurrent via Heating BiFeo3 Thin Film for UV Photodetector at Wide Temperature Range

The current research on ferroelectric photovoltaic materials is concentrated on enhancing the output photocurrent. As solar cells operate at high temperatures, it is crucial to take into account the effect of increasing temperatures on ferroelectric photovoltaics. In this study, an LNO (lanthanum nickelate, LaNiO₃)/BFO (bismuth ferrate, BiFeO₃)/ITO (indium tin oxide) device is constructed on a mica substrate by sol–gel method. The device achieves output photocurrent enhancement at a wide temperature range (33–183 °C), with the largest photocurrent enhancement at 130 °C, which is 178% relative to room temperature, and the output power is also increased by 9.88 times. At the same time, compared with BFO bulk, it is found that the performance of BFO film is always higher than that of bulk in the test temperature range, and the output photocurrent of BFO film at room temperature is 104 times higher than that of bulk. This article investigates the effect of high temperatures on ferroelectric photovoltaics and also provides a strategy for enhancing the photovoltaic performance of ferroelectric films, providing guidance for future applications of ferroelectric films in flexible solar cells and other applications.     

High-Performing Quasi-2D Perovskite Photodetectors with Efficient Charge Transport Network Built from Vertically Orientated and Evenly Distributed 3D-Like Phases

Quasi-two-dimensional (Q-2D) perovskites are emerging as one of the most promising materials for photodetectors. However, a significant challenge to Q-2D perovskites for photodetection is their insufficient charge transport ability, which is mainly attributed to their hybrid low-dimensional n-phase structure. This study demonstrates that evenly-distributed 3D-like phases with vertical orientation throughout the film can greatly facilitate charge transport and suppress charge recombination, outperforming the prevalent phase structure with a vertical dimension gradient. Based on such a phase structure, a Q-2D Ruddlesden−Popper perovskite self-powered photodetector achieving a combination of exceptional figures-of-merit is realized, including a responsivity of 0.45 AW⁻¹, a peak specific detectivity of 2.3 × 10¹³ Jones, a 156 dB linear dynamic range, and a rise/fall time of 2.89 µs/1.93 µs. The desired phase structure is obtained by utilizing a double-hole transport layer (HTL), combining hydrophobic PTAA and hydrophilic PEDOT: PSS. Besides, the dependence of the hybrid low-dimensional phase structure is also identified on the surface energy of the buried HTL substrate. This study gives insight into the correlation between Q-2D perovskites’ phase structure and performance, providing a valuable design guide for Q-2D perovskite-based photodetectors.     

Ultra-Stable and Sensitive Ultraviolet Photodetectors Based on Monocrystalline Perovskite Thin Films

The detection of ultraviolet (UV) radiation with effective performance and robust stability is essential to practical applications. Metal halide single-crystal perovskites (ABX₃) are promising next-generation materials for UV detection. The device performance of all-inorganic CsPbCl₃ photodetectors (PDs) is still limited by inner imperfection of crystals grown in solution. Here wafer-scale single-crystal CsPbCl₃ thin films are successfully grown by vapor-phase epitaxy method, and the as-constructed PDs under UV light illumination exhibit an ultralow dark current of 7.18 pA, ultrahigh ON/OFF ratio of ≈5.22 × 10⁵, competitive responsivity of 32.8 A W⁻¹, external quantum efficiency of 10867% and specific detectivity of 4.22 × 10¹² Jones. More importantly, they feature superb long-term stability toward moisture and oxygen within twenty-one months, good temperature tolerances at low and high temperatures. The ability of the photodetector arrays for excellent UV light imaging is further demonstrated.     

Lateral WSe2 Homojunction through Metal Contact Doping: Excellent Self-powered Photovoltaic Photodetector

Here an IR-heating chemical vapor deposition (CVD) approach enabling fast 2D-growth of WSe₂ thin films is reported, and the great potential of metal contact doping in building CVD-grown WSe₂-based lateral homojunction is demonstrated by contacting with TiN/Ni metals in favor of holes/electrons injection. Shortening nanosheet channel to ≈2 µm leads to pronounced enhancement in the performance of diode. The fabricated WSe₂-based diode exhibits high rectification ratios without the need of gate modulation and can work efficiently as photovoltaic cell, with maximum open circuit voltage reaching up to 620 mV and a high power conversion efficiency over 15%, empowering it as superb self-powered photodetector for visible to near-infrared lights, with photoresponsivity over 0.5 A W⁻¹ and a fast photoresponse speed of 10 µs under 520 nm illumination. It is of practical significance to achieve well-performed photovoltaic devices with CVD-grown WSe₂ using fab-friendly metals and simple processing, which will help pave the way toward future mass production of optoelectronic chips.