铝薄膜CMP影响因素分析

提出了在碱性抛光液中铝薄膜化学机械抛光的机理模型,对抛光液的pH值、磨料、氧化剂浓度对过程参数的影响做了一些试验分析。试验结果表面粗糙度的铝薄膜所需的最优化CMP过程参数:硅溶胶粒径为15～20nm,pH值为10.8～11.2,氧化剂浓度为2.5%～3%。     

Characterization and optimization of copper chemical mechanical planarization

The feature scale planarization of the copper chemical mechanical planarization (CMP) process has been characterized for two copper processes using Hitachi 430-TU/Hitachi T605 and Cabot 5001/Arch Cu10K consumables. The first process is an example of an abrasive-free polish with a high-selectivity barrier slurry, while the second is an example of a conventional abrasive slurry with a low-selectivity barrier slurry. Copper fill planarization has been characterized for structures with conformal deposition as well as with bumps resulting from bottom-up fill. Dishing and erosion were characterized for several structures after clearing. The abrasive-free polish resulted in low sensitivity to overpolish and low saturation levels for dishing and erosion. Consequently, this demonstrated superior performance when compared to the International Technology Roadmap for Semiconductors (ITRS) 2000 roadmap targets for planarization. While the conventional slurry could achieve the 0.13-μm technology node requirements, the abrasive-free polish met the planarization requirements beyond the 0.10-μm technology node.     

激光抛光技术的发展与展望

介绍激光抛光技术的发展历史,阐明激光抛光的应用现状及未来的发展前景,论述了激光抛光的工艺特点和作用机理,将激光抛光技术与其它抛光技术进行了全面的对比,指出激光抛光的优势及其存在的问题。     

Chemical mechanical polishing of polymer films

Strategies to reduce capacitance effects associated with shrinking integrated circuit (IC) design rules include incorporating low resistivity metals and insulators with low dielectric values, or “low-κ” materials. Using such materials in current IC fabrication schemes necessitates the development of reliable chemical mechanical polishing (CMP) processes and process consumables tailored for them. Here we present results of CMP experiments performed on FLARE™ 2.0 using a specialized zirconium oxide (ZrO₂) polishing slurry. FLARE™ 2.0 is a poly(arylene) ether from AlliedSignal, Inc. with a nominal dielectric constant of 2.8. In addition, we provide insight into possible removal mechanisms during the CMP of organic polymers by examining the performance of numerous abrasive slurries. Although specific to a limited number of polymers, the authors suggest that the information presented in this paper is relevant to the CMP performance of many polymer dielectric materials.     

不同加工工艺的锑化镓晶片损伤研究

用透射电子显微镜、扫描电镜对锑化镓材料切、磨、抛等加工工艺引入的表面损伤进行观察和检测。结果表明：切割加工是锑化镓单晶晶片表面损伤层引入的主要工序；锑化镓单晶切割片表面极不平整，有金刚砂所引起的较粗桔皮皱纹；其表面损伤层深度≤30μm；双面研磨的锑化镓晶片表面仍有较粗桔皮皱纹，但比切割片的要细，而且桔皮皱纹的深浅随磨砂（Al2O3)粒径的减小而变细变浅；晶片的表面损伤层深度（≤5μm）也随着磨砂粒径的减小而减小。一般情况下，其损伤层的深度约为磨砂粒径的1/2。机械化学抛光加工的锑化镓晶片表面的SEM像观察不到桔皮皱纹；其损伤层深度约55nm。     

皮革去污上光用乳化蜡的研制

采用石蜡、微晶蜡为主要原料 ,经实验选出了以水为稀释剂的乳化型皮革去污上光蜡。实验优化的配方为石蜡 12 .5 g ,微晶蜡 8.0 g ,硬脂酸 8.5g ,三乙醇胺 5 .5 g ,水量 70 (涂用 )或 130 g(喷用 )。反应条件为乳化时间 4 0min ,搅拌速度 5 0 0～ 70 0r/min ,乳化温度 90℃。制得上光剂产品的去污性能可与用去污剂单独处理的效果相当 ,亮度可达 6 6 .7。     

抛光液温控装置结构设计及温度场分析

为精确控制超光滑表面抛光过程中抛光液的温度,根据温控基本原理设计温控装置结构.将用UG建立的温控装置模型导入GAMBIT中进行温度场分析.针对装置内部温度分布不均匀问题,对其结构进行优化：在装置内加入导热隔板将其分为工作区和调温区,制冷器被置于调温区内;将温控装置的外形结构加入过渡圆角.结果表明：优化后的温控装置形成内外环流,工作区温度波动范围为±0.01℃,温度分布均匀对称,满足高精度温控的恒温和匀温要求.     

Electrochemical characteristic of chemical-mechanical polishing of copper with oxide passive film

1　INTRODUCTIONThankstoitslowresistivityandhighelectromi grationresistance ,copperappearstobeaverypromisingsubstituteforaluminumininterconnec tions[1] .However ,copperisverydifficulttopattern ,andonlychemical mechanicalpolishing (CMP)tech nologycanresolvethisproblem[2 ] .CMPwasinitiallyinvestigatedandopenedoutfrom 1980soverseas[3] ,anditisthebestandonlyglobalplanarizationtech nologyatpresent ,butkeepsholdofbusinesssecretsallthetime .Fayolleetal[2 ] researchedCMPprocessofcopperwhereFe(…     

矿山磨光球用钢XK5159H的生产试制

XK5159H钢连铸连轧棒材用于制造矿山磨光球，对于钢的纯净度、低倍组织、探伤结果及DI值等均有严格的要求，很难控制。我们通过制定内控化学成分及合理的工艺路线，使生产试制一次成功。     

纳米磨料硬度对超光滑表面抛光粗糙度的影响

通过均相沉淀法制备了纳米CeO2和Al2O3粉体,研究了在相同抛光条件下纳米CeO2、Al2O3和SiO2磨料对硅片的抛光效果,用原子力显微镜观察了抛光表面的微观形貌并测量其表面粗糙度.结果表明:纳米CeO2磨料抛光后表面具有更低的表面粗糙度,在5 靘5 靘范围内表面粗糙度Ra值为0.240 nm,而且表面的微观起伏更趋向于平缓;考虑了纳米磨料在抛光条件下所发生的自身变形,其变形量相当于一部分抵消了纳米磨料嵌入基体材料的切削深度,而这个切削深度最终决定了抛光表面的粗糙度;分析指出这个变形量与纳米磨料的硬度成反比,硬度低的纳米磨料由于自身变形量大,导致切削深度小,抛光后表面的粗糙度值低.解释了在相同的抛光条件下不同硬度的纳米磨料具有不同的抛光表面粗糙度的原因.