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排序方式: 共有1928条查询结果,搜索用时 46 毫秒
1.
We report a method to produce magnetic nanostructured semiconductor films based in ZnO doped with Nickel to control their magnetic properties. The method is based on a combined diffusion–oxidation process within a controlled atmosphere chamber to produce a uniform distribution of Ni ions in the ZnO films (ZnO:Ni). The synthesis of ZnO:Ni films is reported as well as the magnetoresistive characteristics, the used method yields films with reproducible and homogeneous properties. The films were also characterized structurally by X-Ray Diffraction (XRD) and Raman spectroscopy, and by Hall–van der Pauw measurements. The XRD measurements confirm the nanocrystalline films character. The films resulted of n-type conductivity with electron concentrations of ~1020 cm−3 in average and carrier mobilities of 5 cm2/V s. The Magnetoresistance (MR) behavior of the films at 300 K shows negative changes of ΔR~0.5% in accordance with the usual literature reports on samples produced by other methods. 相似文献
2.
Light-emitting field effect transistors (LEFETs) are a class of organic optoelectronic device capable of simultaneously delivering the electrical switching characteristics of a transistor and the light emission of a diode. We report on the temperature dependence of the charge transport and emissive properties in a model organic heterostructure LEFET system from 300 K to 135 K. We study parameters such as carrier mobility, brightness, and external quantum efficiency (EQE), and observe clear thermally activated behaviour for transport and injection. Overall, the EQE increases with decreasing temperature and conversely the brightness decreases. These contrary effects can be explained by a higher recombination efficiency occurring at lower temperatures, and this insight delivers new knowledge concerning the optimisation of both the transport and emissive properties in LEFETs. 相似文献
3.
Roberto C. Dante Pablo Martín-Ramos Pedro Chamorro-Posada Dario Rutto José Vázquez-Cabo Denisse G. Dante 《Fullerenes, Nanotubes and Carbon Nanostructures》2020,28(7):533-540
AbstractIn this work, a new g-C3N4-based Z-scheme with γ-Fe2O3 and β-Ag2Se both n-type semiconductors, and graphite to favor electron exchange is presented. The composite material was studied by XRD, FTIR, UV-Vis, TEM, XPS, TGA, DSC and TOF-SIMS, and the ability of this photocatalytic system to act as a photo-reductant was assessed using crystal violet (CV+) dye. Solar light driven photo-reduction of CV+ in the presence of tri-sodium citrate evidenced a synergistic enhancement of the activity of the composite toward reduction, with ~20 times higher conversion rates per unit of surface area than those of g-C3N4. Photo-oxidation experiments under Xe lamp irradiation in the presence of H2O2 also showed that the AgFeCN composite featured a higher activity (~8×) than g-C3N4. This Z-scheme may deserve further study as a photo-reductant to obtain hydrogen or hydrogenated compounds. Moreover, the use of CV+ may represent a facile procedure that can aid in the selection of new photocatalysts to be used in hydrogen production. 相似文献
4.
K. P. Lee S. J. Pearton M. E. Overberg C. R. Abernathy R. G. Wilson S. N. G. Chu N. Theodoropolou A. F. Hebard J. M. Zavada 《Journal of Electronic Materials》2002,31(5):411-415
In p-GaN implanted with Mn (3×1016 cm−2 at 250 keV), the material after annealing shows ferromagnetic properties below 250 K. Cross-sectional transmission electron
microscopy (TEM) revealed the presence of platelet structures with hexagonal symmetry. These regions are most likely GaxMn1−xN, which produce the ferromagnetic contribution to the magnetization. In p-GaN implanted with Fe, the material after annealing
showed ferromagnetic properties at temperatures that were dependent on the Fe dose, but were below 200 K in all cases. In
these samples, TEM and diffraction analysis did not reveal any secondary phase formation. The results for the Fe implantation
are similar to those reported for Fe doping during epitaxial growth of GaN. 相似文献
5.
A thermodynamic modeling of GaN was carried out to describe the thermodynamic behavior of native defects, dopants, and carriers
(free electrons and holes) in GaN semiconductors. The compound energy model (CEM) was used. An unintentionally doped GaN was
taken as an example. Oxygen was introduced into the model as the unintentionally doped impurity, according to the practical
experimental phenomena. The energies of component compounds in the model were defined based on the results of the ab initio
calculations and adjusted to fit experimental data. The thermodynamic properties of the defects and the oxygen doped were
calculated to show the facility of the model. 相似文献
6.
The technique of high pressure is utilized to study the carrier transport behaviour in doped and undoped bulk amorphous (GeSe3·5)100−x
Bi
x
(x=0, 2, 4, 10) down to liquid nitrogen temperature to observe impurity induced modifications in amorphous semiconductors. It
is observed that pressure induced effects in lightly doped (2 at % Bi) and heavily doped (x=4, 10) semiconductors are markedly different. Results are discussed in view of the incorporation behaviour of the bismuth
impurity. 相似文献
7.
J. S. Kim D. G. Seiler R. A. Lancaster M. B. Reine 《Journal of Electronic Materials》1996,25(8):1215-1220
Variable-magnetic-field Hall measurements (0 to 1.5 T) are performed on very-narrow-gap bulk-grown Hg1−xCdxTe single crystals (0.165 ≤ x ≤ 0.2) at various temperatures (10 to 300K). The electron densities and mobilities are obtained
within the one-carrier (electrons) approximation of the reduced-con-ductivity-tensor scheme. The present data together with
the selected data set reported by other workers exhibit a pronounced peak when the electron mobility is plotted against the
alloy composition x-value which has been predicted to be due to the effective-mass minimum at the bandgap-crossing (Eg ≈ 0). The observed position (x ≈ 0.165), height (≈4 x 102 m2Vs), and width (≈0.01 in x) of the mobility-peak can be explained by a simple simulation involving only ionized-impurity scattering.
A lower bound of the effective mass is introduced as a fitting parameter to be consistent with the finiteness of the observed
electron mobility and is found to be of the order of 10−4 of the mass of a free electron. 相似文献
8.
湿敏半导体材料电导率计算方法的研究 总被引:3,自引:0,他引:3
结合修正了的耗尽层理论和多孔湿敏半导体的特点,本文提出了一个简单的物理模型作为n型湿敏半导体特征的一级近似。描述了多孔湿敏半导体的导电机理,并给出了湿度与宏观电导率的关系。 相似文献
9.
Herbert S. Bennett 《Journal of research of the National Institute of Standards and Technology》2007,112(4):209-221
In this paper, we present the theory for calculating Raman line shapes as functions of the Fermi energy and finite temperatures in zinc blende, n-type GaAs for donor densities between 1016 cm−3 and 1019 cm−3. Compared to other theories, this theory is unique in two respects: 1) the many-body effects are treated self-consistently and 2) the theory is valid at room temperature for arbitrary values of the ratio R = (Q2/α), where Q is the magnitude of the normalized wave vector and α is the normalized frequency used in the Raman measurements. These calculations solve the charge neutrality equation self-consistently for a two-band model of GaAs at 300 K that includes the effects of high carrier concentrations and dopant densities on the perturbed densities of states used to calculate the Fermi energy as a function of temperature. The results are then applied to obtain the carrier concentrations from Fermi energies in the context of line shapes in Raman spectra due to the coupling between longitudinal optical phonons and plasmons. Raman measurements have been proposed as a non-destructive method for wafer acceptance tests of carrier density in semiconductor epilayers. The interpretation of Raman spectra to determine the majority electron density in n-type semiconductors requires an interdisciplinary effort involving experiments, theory, and computer-based simulations and visualizations of the theoretical calculations. 相似文献
10.