A 10-MHz SOI-Based Face Shear Square Micromechanical Resonator

A 10-MHz face shear (FS) square micromechanical resonator based on silicon-on-insulator (SOI) technology is presented in this paper. In order to examine the improvement of quality factor as well as motional resistance Rx in this structure, the center-stem anchor is employed in this study. The benefit of anchoring the square in the center, which is the nodal point, is that the energy losses through the anchor can be minimized. Hence, a quality factor value of 2.0 million and the motional resistance of 8.2 kΩ can be obtained with an FS mode resonator via finite element (FE) simulation. The results show the significance of the FS mode in this design, not only in its structure but also in its square-extensional mode and Lame-mode. Additionally, an SOI-based fabrication process is proposed to support the design.     

Design and fabrication of a planar patch-clamp substrate using a silicon-on-insulator wafer

noise.     

Reduction of gate-to-channel tunneling current in FinFET structures

In this work, the gate-to-channel leakage current in FinFET structures is experimentally studied in comparison with quasi-planar very wide-fin structures, and as a function of the fin width. Devices with both doped and undoped channels and different gate stacks are studied. Experimental evidence for the reduction of gate tunneling current density in narrow FinFET structures compared to their counterpart quasi-planar structures is reported for the first time. This gate current reduction is observed for both n-channel and p-channel devices and is found to be stronger for HfO₂ than for SiON. For a given gate dielectric, the above gate current improvement in FinFETs enhances with decreasing the fin width. For SiON with an equivalent oxide thickness of 1.6 nm in undoped n-channel devices, it varies from factor of 2.3–4.3, when the fin width decreases from 75 to 25 nm. The possible reasons for the observed effect are discussed.     

基于SOI工艺的高压LED驱动设计

为了解决LED驱动芯片因耐压低而在高压领域应用受限制的问题,将绝缘体上硅（SOI）技术应用到LED驱动的设计中,设计了一款基于SOI工艺的高压LED驱动芯片。首先提出了该驱动的系统框图,并介绍了其工作原理,然后对各重要模块进行了详细的介绍。该LED驱动输入电压范围为40 V～625 V,采用峰值电流模式控制,并提供线性与脉宽调制（PWM）两种调光方式,根据不同应用,外接的LED灯可达十几至上百个不等。采用XFAB 1μm SOI工艺,并使用Cadence的Spectre系列软件进行了仿真。仿真与测试结果验证了该驱动的良好性能。该设计对基于SOI工艺的高压电源管理芯片的设计具有指导意义。     

具有电阻场板的薄膜SOI-LDMOS的精确解析

介绍了一种对具有电阻场板的薄膜SOI LDMOS的精确解析设计方法.在对电场分析的基础上,提出了新的电离率模型,并求出了电离率积分的准确路径,进而得到击穿电压、漂移区掺杂、漂移区长度与SOI硅层厚度、埋氧层厚度的关系.模拟结果表明,解析与模拟结果具有很好的一致性,而且设计的器件具有击穿电压大、比导通电阻极小的优点.该解析理论为在薄膜SOI材料上制作性能优良的高压功率器件提供了一个很好的参考     

Recent Progress in Silicon Electro-optic Modulators for High Speed Applications

Silicon-based high-speed electro-optical modulator is the key component of silicon photonics for future communiction and interconnection systems. In this paper, introduced are the optical mudulation mechanisms in silicon, reviewed are some recent progresses in high-speed silicon modulators, and analyzed are advantages and shortages of the silicon modulators of different types.     

半导体阵列微剂量探测器前端读出电路设计

根据三维Si SOI PIN像素微剂量探测器特性参数,设计了一种基于GF chrt018IC CMOS工艺的前端读出电路。该读出电路主要包括PMOS输入的电荷灵敏前前置放大器,有源整形滤波电路,电压比较器及基准电流源等,可实现对微剂量信号的放大、滤波降噪、甄别输出等功能。仿真测试表明:能量探测范围为5~500 fC,单通道功耗约为2 mW,总噪声性能为0.05 f C+1.6×10~(-3)fC/pF。     

利用改善的体连接技术制备SOI LDMOSFET

对功率器件中常用的体连接技术进行了改进,利用一次硼离子注入技术形成体连接.采用与常规1μm SOI(硅-绝缘体)CMOS工艺兼容的工艺流程,在SIMOX SOI片上制备了LDMOS结构的功率器件.器件的输出特性曲线在饱和区平滑,未呈现翘曲现象,说明形成的体连接有效地抑制了部分耗尽器件的浮体效应.当漂移区长度为2μm时,开态击穿电压达到10V,最大跨导17.5mS/mm.当漏偏压为5V时,SOI器件的泄漏电流数量级为1nA,而相应体硅结构器件的泄漏电流为1000nA.电学性能表明,这种改善的体连接技术能制备出高性能的SOI功率器件.     

基于SOI-MEMS技术的静电驱动-电容检测硅谐振器

提出一种基于SOI-MEMS技术的静电驱动-电容敏感检测的横向硅谐振器,对其进行设计、MEMS工艺加工制作实现、微弱电容检测及开环测试．该新型静电激励谐振器结构主要包含一个从中间受力点向两侧引出两个电极板的双端固支梁,这种设计使得此谐振器的静电驱动电压远小于具有相同电极板面积和极板间距的同类静电驱动谐振器,且检测电容更大,降低了检测难度．以器件层电阻率很低（0．001～0．002Ω·bcm）的SOI晶圆为基础材料,其SOI—MEMS加工工艺流程简单,仅需要2块掩膜版,有4个主要单步工艺．实验测试结果表明：在真空度为0．1—1．0Pa环境下,直流偏置电压低至30V,交流驱动电压峰-峰值为20mV时,该谐振器在其谐振频率点52261．99Hz处的Q值依然高于11800．     

基于级联微环谐振器的集成化可重构光学上下路插分复用器

We report on an eight-channel reconfigurable optical add-drop multiplexer based on cascaded microring resonators with a high tuning power consumption and a compact footprint. Microheaters are fabricated on top of the microring resonators and can be modulated using the thermo-optic effect to achieve the reconfigurable functionality of the device. We demonstrate the reconfigurable add-drop multiplexing functionality for channel spacings of 100 GHz and 50 GHz, with the centre wavelengths of the channels aligned to International Telecommunication Union grid specifications. The crosstalk for channel spacings of 100 GHz and 50 GHz are less than..22:5 dB and..15:5 dB, respectively. The average tuning efficiency is about 4.5 mW/nm, and the response speed is about 13.0 kHz.