基于神经网络算法的井下裂缝诊断与堵漏技术

在钻井过程中，常常钻遇不同宽度的井下地层裂缝。钻遇裂缝时容易发生钻井液漏失现象，甚至发生钻井液失返现象，严重影响了安全、高效钻井。目前裂缝封堵的方法常存在封堵成功率不高、堵漏承压能力低的问题，其中一个重要的原因是对井下地层的裂缝宽度等特征认识不清。基于地层裂缝产生的岩石力学机理，确定影响裂缝宽度关键的6个力学和工程因素，并利用神经网络计算的非线性、大数据特点建立了井下地层裂缝宽度的分析模型，模型包含输入层、输出层和3个隐藏层。通过该模型诊断井下裂缝宽度，提高了计算精度，平均误差仅为2.09%，最大误差为5.88%，解决钻井现场仅凭经验判断裂缝误差较大和依靠成像测井成本较高的问题。同时根据神经网络模型诊断得到的裂缝宽度优化堵漏材料的粒径配比，提高了裂缝内的架桥封堵强度和架桥的稳定性，封堵层的承压能力达到12.8 MPa，反向承压能力达到4.5 MPa。现场堵漏试验最高憋压10 MPa，经过封堵作业后大排量循环不漏，达到了裂缝性地层高效堵漏的目的，堵漏一次成功。      

聚硅烷的电子特性及非线性光学材料

综述了聚硅烷的电子结构、光吸收特性。重点介绍了聚硅烷在非线性光学材料中的研究与应用。     

Cif2000平台下的核磁共振测井解谱方法研究

介绍了在Cif2000多井解释平台下的核磁共振解谱方法与编程实现。解谱采用加入平滑因子后在特征矩阵的奇异值分解中截去小的非零奇异值的方法，可以在低信噪比时得到稳定的弛豫谱，在油田实际应用中证明了该方法的有效性。根据该方法在Cif2000平台上编制了完整的解谱处理程序，可以直接用于油田的生产实际。     

Synthesis, Characterization, and Formation Process of Na-X Zeolite from Coal Fly Ash

Using the SiO₂ and Al₂O₃ components of the amorphous phase in coal fly ash (Fa), Fa was converted to Na-X zeolites in NaOH-NaAlO₂ solutions by stirring at 35°C for 72 hr and then aging at 85°C for a given period. The molar ratio SiO₂/Al₂O₃ of the starting materials was controlled from 2.0 to 13.2. The resulting materials were characterized by various means. Increasing the SiO₂/Al₂O₃ ratio of the starting material increased the degree of crystallinity of faujasite, exhibiting a maximum at SiO₂/Al₂O₃ = 8.0. The faujasite formed was identified as Na-X zeolite with Si/Al = 1.20. The amorphous phase in Fa was dissolved during the stirring to form a precursor of zeolite, such as amorphous aluminosilicate. The Na-X zeolite was formed by aging for 24 hr, and the degree of crystallinity of this material was increased with the increasing aging period. The cation exchange capacity and specific surface area were increased with the increasing degree of crystallinity of the Na-X zeolites.     

Comparison of activities in selective catalytic reduction of NOx by C3H8 over Co/MFI, Fe/MFI, and H/MFI zeolite catalysts

The Co/MFI(SiO₂/Al₂O₃ = 30) were prepared by a precipitation method with NaOCl in alkali solutions exhibited high activities to N₂ at 250 °C for the selective catalytic reduction (SCR) of NO_x. These catalysts showed two UV–vis bands at 700 and 400 nm, indicating the presence of octahedral Co(III) as well as tetrahedral Co(II). The high SCR activity over such Co(III, II)/MFI(30) seems to come from Co(III)---O moieties. The Co(II)MFI(30) catalysts prepared from Co(II)Cl₂ exhibited low SCR activities due to the presence of tetrahedral Co(II) ions in MFI. Less CO formation occurred over Co/MFI catalysts. The Fe/MFI(30) catalyst exhibited high activity due to the presence of some Fe---O species in MFI but more amount of CO were produced during SCR. H/MFI(30) catalyst exhibited a good SCR activity. However, more amount of carbonaceous deposits were produced on it. The correlation between acid concentration and SCR activity was discussed over H/MFIs.     

Determination of the width of the transition layer between the crystalline and amorphous zones in nylon 1010 by SAXS

The width of the transition layer between the crystalline and amorphous zones in nylon 1010 was determined by SAXS with point collimation and long-slit collimation, respectively. The width of the transition layer, E, was found to be 1.7 nm. The results show that the width of the transition layer is independent of crystallinity.     

泥沙输移矢量式及其应用

本文基于Parker等人泥沙输移矢量式的分析和研究，增加了上举力的作用，并考虑了泥沙颗粒受力非平衡条件，采用牛顿力学的矢量分析法，推导了泥沙输移的通用矢量式。经对公式简化，且用Ikeda和笔者试验资料的验证，证明计算值与试验值吻合较好。     

强度调制／直接检测（IM／DD）光纤通信系统色散限制的研究

通过引入归一化脉宽Ｐ和相对脉冲展宽因子ｑ，提出了一个适用于ＩＭ／ＤＤ系统中各种眼图恶化量ｘ和归一化脉宽Ｐ的色散限制改进公式。通过与其它理论的比较、计算机仿真和对实验数据的分析，验证了该公式的正确性，并给出了其它结果的限制条件。研究表明：当眼图恶化量ｘ为１ｄＢ左右时，对２．５Ｇｂ／；外调制信号（α＝０）而言，非色散位移光纤ＩＭ／ＤＤ系统的色散因子γ约等于０．７９，所对应的系统再生中继距离约为９００余公里。     

Synthesis and characterisation of carboxylic acid and diphenylphosphine derivatives in the 1,3-diyne series: Spectral properties of polydiacetylene carboxylates

Symmetrically substituted 1,3-diynes containing hydroxyalkyl ( 1a-d ), bromoalkyl ( 1e-h ) (diphenylphosphinyl) ( 1i-k ) and carboxyalkyl ( 2a-d ) substituents have been prepared and characterised; the phosphine derivative ( 1k ) has been converted with alkyl iodides ( RI ; R = Me, Et) into bis(phosphonium) salts ( 1l and m ). During preparation of the diynedioic acid. ( 2a ), the non-centrosymmetrical diyne, HO₂CCH₂C?C—C?C(CH₂)₂OH ( 3 ), was also isolated. ⁶⁰Co γ-Irradiation of diacetylene monomers ( 2a – d ) and 10,12-tricosadiyn-1-oic acid gave the corresponding polydiacetylene derivatives ( 4a – d and 5 ), respectively. Rubidium salts of ( 4c ) and ( 4d ), a barium salt of ( 4c ), and a potassium salt of ( 5 ) were prepared and isolated; soluble potassium salts of the carboxylic acid polymers ( 4 ) were generated in aqueous solution. The effects of changes in pH on the UV/visible absorption spectra of aqueous solutions of selected carboxylic acid polydiacetylenes have been recorded, and are discussed.     

Extracting Electron Densities in N-Type GaAs From Raman Spectra: Theory

In this paper, we present the theory for calculating Raman line shapes as functions of the Fermi energy and finite temperatures in zinc blende, n-type GaAs for donor densities between 10¹⁶ cm⁻³ and 10¹⁹ cm⁻³. Compared to other theories, this theory is unique in two respects: 1) the many-body effects are treated self-consistently and 2) the theory is valid at room temperature for arbitrary values of the ratio R = (Q²/α), where Q is the magnitude of the normalized wave vector and α is the normalized frequency used in the Raman measurements. These calculations solve the charge neutrality equation self-consistently for a two-band model of GaAs at 300 K that includes the effects of high carrier concentrations and dopant densities on the perturbed densities of states used to calculate the Fermi energy as a function of temperature. The results are then applied to obtain the carrier concentrations from Fermi energies in the context of line shapes in Raman spectra due to the coupling between longitudinal optical phonons and plasmons. Raman measurements have been proposed as a non-destructive method for wafer acceptance tests of carrier density in semiconductor epilayers. The interpretation of Raman spectra to determine the majority electron density in n-type semiconductors requires an interdisciplinary effort involving experiments, theory, and computer-based simulations and visualizations of the theoretical calculations.