Morphological study of thin films: Simulation and experimental insights using horizontal visibility graph

We studied the morphological nature of various thin films such as silicon carbide (SiC), diamond (C), germanium (Ge), and gallium nitride (GaN) on silicon substrate Si(100) using the pulsed laser deposition (PLD) method and Monte Carlo simulation. We, for the first time, systematically employed the visibility algorithm graph to meticulously study the morphological features of various PLD grown thin films. These thin-film morphologies are investigated using random distribution, Gaussian distribution, patterned heights, etc. The nature of the interfacial height of individual surfaces is examined by a horizontal visibility graph (HVG). It demonstrates that the continuous interfacial height of the silicon carbide, diamond, germanium, and gallium nitride films are attributed to random distribution and Gaussian distribution in thin films. However, discrete peaks are obtained in the brush and step-like morphology of germanium thin films. Further, we have experimentally verified the morphological nature of simulated silicon carbide, diamond, germanium, and gallium nitride thin films were grown on Si(100) substrate by pulsed laser deposition (PLD) at elevated temperature. Various characterization techniques have been used to study the morphological, and electrical properties which confirmed the different nature of the deposited films on the Silicon substrate. Decent hysteresis behavior has been confirmed by current-voltage (IV) measurement in all the four deposited films. The highest current has been measured for GaN at ～60 nA and the lowest current in SiC at ～30 nA level which is quite low comparing with the expected signal level (μA). The HVG technique is suitable to understand surface features of thin films which are substantially advantageous for the energy devices, detectors, optoelectronic devices operating at high temperatures.     

北斗三星无源定位技术

介绍了北斗双星定位系统的特点、功能、系统组成和工作原理,说明了北斗有源定位方式在应用方面的局限性。针对北斗有源定位方式不能无线电静默,和人们对具有无线电隐蔽性的卫星定位的需求,详细介绍一种北斗三星无源定位技术:包括工作原理、实现方法、定位精度分析和目前达到的定位精度。阐述了北斗三星无源定位技术的优点和应用形势。     

模糊层次分析法在腐蚀影响因素分析中的应用

结合国内外对碳钢CO2腐蚀影响因素的研究成果,采用模糊层次分析法对影响输油管道 CO2腐蚀的因素进行定量分析,明确界定出这些因素对二氧化碳腐蚀影响的相对重要性(权重),为后续制定经济有效的管道内腐蚀防护措施提供了客观依据。     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

醇镁还原法一步制取对氯苯胺的研究

醇镁还原法一步制取对氯苯胺是一种新的方法 ,研究发现最佳反应温度为 80℃～ 85℃ ,反应时间为4h ,对氯硝基苯与镁粉的用量 (物质的量比 )为 1∶3,产率为 80 %。     

Electrical and growth characteristics of Au/Al0.15Ga0.85N:Si structures with various Si incorporations

We have investigated the growth characteristics of n-Al_0.15Ga_0.85N:Si/GaN and the electronic properties of Au/n-Al_0.15Ga_0.85N:Si diode structures grown by metal-organic chemical vapor deposition (MOCVD) with various Si incorporations. The Al_0.15Ga_0.85N:Si layers were grown on undoped GaN/sapphire (0001) epitaxial layers in a horizontal MOCVD reactor at the reduced pressure of 300 torr. The mirrorlike surface, free of defects, such as cracks or hillocks, can be seen in the undoped Al_0.15Ga_0.85N epilayer, which was grown without any intentional flow of SiH₄. However, many cracks are observed in the n-Al_0.15Ga_0.85N:Si, which was grown with Si incorporation above 1.0 nmol/min. While Au/n-Al_0.15Ga_0.85N:Si diodes having low incorporation of Si showed retively good rectifying behavior, the samples having high Si incorporation exhibited leaky current-voltage (I-V) behavior. Particularly, the Au/n-Al_0.15Ga_0.85N:Si structure grown with Si incorporation above 1.0 nmol/min cannot be used for electrical rectification. Both added tunneling components and thermionic emission influence the current transport at the Au/n-Al_0.15Ga_0.85N:Si barrier when Si incorporation becomes higher.     

由乙腈一步法制备乙酸丁酯的研究

以丁醇和制备丙烯腈的副产物乙腈为原料 ,采用一步法合成了乙酸丁酯。通过正交实验得到了影响反应的 4种因素。确定了最佳的工艺条件为 :催化剂的量为样品质量的 40 % ;n(CH3CN)∶ n(C4 H9OH) =1∶ 1 .0 5 ;反应温度为 1 0 5℃ ;反应时间为 8h。在此反应条件下 ,乙酸丁酯的收率为 88.8% ,纯度可达 99.5 %。并用气相色谱及红外光谱对产品的纯度进行了表征     

Microscopic and Macroscopic Growth Rates of Fatigue Cracks in Steels and Alloys under the Influence of Crack Closure

On the basis of the experimental data, we show that the difference between the macroscopic and microscopic fatigue crack growth rates in the second section of the kinetic diagram of fatigue fracture is caused by the effect of crack closure within the limits of its existence. We establish the relationships between the macroscopic and microscopic fatigue crack growth rates and the structure of the material in the second section of the diagram for various values of the load ratio with regard for the effect of crack closure and propose a procedure of examination of the fracture processes in structural materials based on the analysis of microscopic and macroscopic fatigue crack growth rates.     

煤层物性测井评价方法初探

依据煤岩的赋存方式和结构特点，利用电阻率和井径测井资料在不同煤质结构的煤层所表现的差异性，建立了2个指标(即深侧向电阻率与微球电阻率之间的比值，井径与钻头之间的比值)对煤质结构进行了准确的识别。用多元回归的概率模型建立了煤岩镜质反射率的测井计算模式，其结果与已有的煤心分析数据对比，两者具有较好的一致性。在综合分析的基础上，对煤层的重要物性参数煤阶、煤质结构进行了测井评价。     

箍筋末端135度弯钩二次就位法讨论

随着人们对建筑安全的日益重视 ,对建筑抗震要求的提高 ,国内外有关规范都对箍筋末端的设置作了明确规定 ,要求做成 135度弯钩。而在工程实践中 ,由于施工上的技术困难 ,很多工程都只设置成 90度弯钩。笔者提出的箍筋末端 135度弯钩二次就位法在基本不增加 90度弯钩施工难度与费用的基础上实现了 135度弯钩的施工 ,其法是可行的