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1.
The paper reviews recent results obtained with diode lasers used in external hybrid cavities with frequency selective feedback.
Such cavities attract continuing interest for several reasons. They generate a tunable single laser mode with very low linewidths
(usually a few tens of kilohertz). Very wide discrete tunable ranges over 100 nm for Fabry-Perot type and over 200 nm for
quantum well lasers are achieved. They can be made to oscillate in a tunable mode having the desired polarization state,TE orTM and, in some cases, simultaneously atTE andTM. This is done by designing a cavity that increases strongly theTM/TE intensity ratio and by using coatings on one laser facet that greatly lower bothTE andTM reflectivities. High-speed polarization switching in the gigahertz range is possible by inserting passive or active polarization
selecting elements in the cavity. For all these reasons hybrid external cavities are attractive for applications in optical
metrology, spectroscopy and optical communications. Moreover, the external cavity configuration allows the study of physical
mechanisms in the laser diode by inducing on purpose phenomena that would have been otherwise impossible to achieve with free-running
lasers. 相似文献
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采用溶胶-凝胶法制备了不同Ba/Sr比的BST粉体,研究了粉体的热处理制度,粉体及其烧结体的微观结构,烧结体的介电性能以及居里温度与组成的关系等。研究结果表明用溶胶.凝胶法制备的BST超细粉体,由于其尺寸细小,粉体的比表面积很大,因而烧结活性更高,在1350℃烧成4h可获得结构致密的单一钙钛矿相的瓷体。 相似文献
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High Efficiency Poly(acrylonitrile) Electrospun Nanofiber Membranes for Airborne Nanomaterials Filtration
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Riyadh Al‐Attabi Ludovic F. Dumée Lingxue Kong Jürg A. Schütz Yosry Morsi 《Advanced Engineering Materials》2018,20(1)
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《Ceramics International》2021,47(18):25901-25909
Dielectric tunable properties in ferroelectric ceramics have been optimized by a variety of approaches, e.g., isovalent/aliovalent substitution, system composite et al., while the study of non-stoichiometric regulation on the performance of BCZT ceramics was rarely concerned. Herein, a series of novel non-stoichiometric (Ba0·91Ca0.09)x (Zr0·18Ti0.82)O3 (BCZTx) ceramic specimens were successfully prepared via solid-state reaction. The microstructures of BCZTx ceramics are simultaneously investigated through XRD and SEM. The diffuse phase transition (DPT) behaviour of BCZTx ceramics are studied by the Lorentz-type empirical formula. The significant enhancement of DPT behaviour is observed at x = 1.03, which probably due to the coaction of the generation of partial Schottky defects and prominent reduction of grain size. Furthermore, a high tunability (k) 87.80%, low dielectric loss (tan δ) 0.141%, and a remarkably enhanced FOM of 623 are achieved in x = 0.99 at a low DC bias electric fields (BEFs) of 7.28 kV/cm and room temperature (RT), which is superior to that of the stoichiometric BCZT ceramics and other available reported BT-based ceramics systems in term of the dielectric tunable properties. Meanwhile, it shows that the temperature dependent CQF value of x = 0.99 remained advantageous around the RT. These findings suggested that non-stoichiometric BCZTx ceramics with x = 0.99 are significantly competitive in the applications of dielectric tunable devices at RT. The non-stoichiometric regulation is an effective approach in improving the dielectric tunability properties of BCZT ceramics. 相似文献
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Abdelkader Outzourhit Ali Naziripour John U. Trefny Tomoko Kito Baki Yarar Robert Yandrofski 《组合铁电体》2013,141(4):227-241
Abstract Ba1?x Sr x TiO3 thin film capacitors have been successfully prepared using rf-sputtering and a metal organic deposition (MOD) method. The structure, microstructure and composition of the BSTO films are presented. Films grown on lanthanum aluminate LAO(100) showed c-axis preferred growth orientation. Broad paraelectric-to-ferroelectric transitions were observed in films prepared by both methods. The tunability of the capacitance by means of an appplied electric field is examined using various capacitor geometries. A decrease in the capacitance exceeding 75% at 77 K was obtained from the MOD deposited films under an electric field strength of 0.3 MV/cm. On the other hand, the tunability of the capacitance in the rf-sputtered films ranged from 5 to 10% at 77 K and at 20 kV/cm, while it exceeds 50% in some films. The results are compared with the predictions of Devonshire's phenomenological theory. 相似文献
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铁电态-顺电态双层薄膜的高介电调谐 总被引:1,自引:1,他引:0
基于Landau-Devonshire自由能理论建立了热力学模型,对生长在(001)SrTiO3衬底上的PbZr0.4Ti0.6O3(PZT)/SrTiO3(STO)双层异质外延结构铁电薄膜以及不受约束的双层薄膜的介电响应与调谐率进行了研究。结果表明,在两层薄膜为无约束的自由薄膜情况下,STO厚度占双层薄膜总厚度的百分比为30%时,相对介电响应达到最大值约3.3×105,当两薄膜为异质外延结构时,其百分比为51%时,相对介电响应达到最大值约4×105。同时,调谐率还随外加电场的增大而增大,在临界百分比时,调谐率可达到约99%。 相似文献
8.
采用射频磁控溅射法在蓝宝石基片上制备了Bi1.5Zn1.0Nb1.5O7(BZN)/Ba0.5Sr0.5TiO3(BST)双层复合薄膜,并研究了该薄膜在100 kHz~6 GHz频率范围内的介电性能。研究结果表明,BZN/BST复合薄膜的介电性能具有良好的频率稳定性。该复合薄膜的介电常数在研究的频率范围内基本与频率无关;其介电损耗在频率低于1 GHz时与频率无关,在频率高于1 GHz时随频率的上升而略微增大;薄膜在研究的频率范围内具有稳定的介电调谐率。 相似文献
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