高性能片式多层氧化锌压敏电阻器材料研究

对非Bi系氧化锌压敏电阻材料进行了系统研究。研究结果表明:在ZnO基体材料中,添加适量PbO、Co2O3、Cr2O3、MnO2、ZrO2、TiO2、Sb2O3 、B2O3等非Bi系添加剂,采用传统陶瓷制备工艺和合适烧结工艺,可获得a >50、IL<1 mA、烧结温度低于1 100℃的实用非Bi系氧化锌电阻瓷料。采用该瓷料,利用MLC工艺,选用Pd30/Ag70电极浆料,制作出V1mA<30 V、a >30、IL<1 mA的片式多层压敏电阻器。     

掺杂对低压ZnO压敏陶瓷材料显微结构及性能的影响

本文探讨了多种金属氧化物对ＺｎＯ－Ｂｉ＿２Ｏ＿３－ＴｉＯ＿２系材料的改性作用和对其微结构的影响，为得到预定性能的材料提供了掺杂方面的实验依据。     

低电压氧化锌压敏电阻器的研究

研究了一种制造低电电压氧化锌压敏电阻器的方法。在基本成分的基础上适当加入二氧化钛可降低梯度电压（Ｖ１ｍＡ／ｍｍ），适量掺硼和改进热处理工艺可减小元件的漏电流和提高其稳定性。     

Admittance—Frequency Response in Zinc Oxide Varistor Ceramics

The lumped parameter/complex plane analysis technique revealed several contributions to the terminal admittance of the ZnO—Bi₂O₃ based varistor grain-boundary ac response. The terminal capacitance has been elucidated via the multiple trapping phenomena, a barrier layer polarization, and a resonance effect in the frequency range 10⁻²≤ f ≤ 10⁹ Hz. The characterization of the trapping relaxation behavior near ∼ 10⁵ Hz (∼ 10⁻⁶ s) provided a better understanding of a previously reported loss-peak. The possible nonuniformity in this trapping activity associated with its conductance term observed via the depression angle of a semicircular relaxation in the complex capacitance ( C *) plane has been postulated.     

室温固相合成掺杂ZnO纳米粉体制备ZnO压敏电阻

以金属离子盐和草酸为原料,采用室温固相化学反应合成掺杂ZnO前驱物,根据DSC-TG分析结果,将其在450℃热分解2 h,得到掺杂ZnO粉体,并用此粉体制备了片式ZnO压敏电阻。借助XRD、TEM、BET等检测手段对粉体产物的物相、形貌、粒度等进行了表征。研究了烧结温度对ZnO压敏电阻电性能的影响。结果表明,所制备的粉体为平均粒径24 nm左右、颗粒呈球状、分散性好的纤锌矿结构掺杂ZnO。在1 080℃烧结时,ZnO压敏电阻的综合电性能达到最佳,电位梯度为791.64 V/mm,非线性系数为24.36,漏电流为43μA。     

Effect of microwave sintering on the microstructure and electrical properties of low-voltage ZnO varistors

Coarse-grained ZnO varistors for low-voltage applications were prepared by microwave sintering technique under different soaking times of 5–150?min. For comparison, a low-voltage ZnO varistor was also prepared through a conventional sintering process. Microwave sintering remarkably enhanced the grain growth rate of ZnO varistors. Average grain size of the sample prepared by microwave sintering in 15?min was about 20?µm, which is similar to the grain size of sample prepared conventionally in 150?min time. In addition to grain growth, an increase in microwave sintering time led to precipitation of zinc titanate (Zn₂TiO₄) on the top surface of samples which sintered for long dwell times. X-ray diffraction and scanning electron microscopy results from different points of the samples declared that precipitation of Zn₂TiO₄ phase is due to the high rate of bismuth evaporation of Bi-rich liquid from top surface and the reaction between remaining titanium ions on the surface with ZnO. The results showed that increasing sintering time from 5 to 150?min increased the grain size from 14 to 33?µm, consequently, the breakdown field decreased from 90 to 27?V/mm, respectively. These changes led to a switch in the varistor application, from low to very low voltage.     

低压双功能TiO2压敏陶瓷的研究

采用一次烧成工艺制备了具有电容性和压敏性双功能TiO2陶瓷.考察了Nb2O5施主掺杂对TiO2压敏陶瓷的显微结构、介电性能和压敏性能的影响.结果表明随Nb2O5掺杂量的增加,样品的晶粒粒径变大、晶界层变薄;压敏电压V1mA减小、非线性系数α和介电常数ε增大.当Nb2O5掺杂量为2 mol%时,TiO2压敏陶瓷有较好的压敏特性ε=22 000、V1mA=2.8 V和α=3.8.     

EFFECTS OF In_2O_3 DOPING AND SINTERING TEMPERATURE ON THE ELECTRICAL PROPERTIES OF ZnO VARISTORS

ZnOvaristorshaveexcellentnon--linearcurrent--voltage(IV)characteristicsandenergyabsorptionability,makingthemvaluableasvoltagesuppressersinpowersystemsandelectroniccircuitsLlj.Thecurrentvoltagedependenceofvaristorsisdescribedbytherelation:I=C(V)"whereIisthecurrentdensity,Caconstant,Vthevoltage,andathecoefficientofnon--linearity.ThestudyresultsshowthatpureZnOgrainhasnottheelectricalconductivity.Intheprocessofitspreparation,thedefectisproducedinthegrain,andmakeitann--typesemiconductor.Thecer…     

ZnO压敏电阻器生产工艺的改进

压敏电阻器的生产工艺是影响产品质量的重要因素之一。通过试验，对生产工艺中，影响ＺｎＯ压敏电阻器直流老化性能的因素，如原材料细度、烧成气氛、成型密度、热处理温度和时间、掺杂等进行了研究，并据此确定了最佳工艺条件。     

氧化锌的理化性能对金属氧化物电阻片电性能的影响

氧化锌是生产电阻片的主要原材料,氧化锌的理化性能对电阻片的质量起着至关重要的作用。通过对氧化锌的理化性能:主含量、杂质含量(钾、钠、铁、镉、铅)、粒度、晶型结构、水分、盐酸不溶物及金属锌含量进行测试分析。根据多年测试经验,对氧化锌测试方法及关键技术条件要求进行了可行性改进,并结合生产实际使用情况,跟踪分析电阻片质量状况,判断氧化锌理化性能要求对电阻片电性能的影响。研究表明,氧化锌中铁、金属锌及钠等杂质含量过多能使电阻片的漏流增大,铅杂质含量过多能使电阻片的方波性能下降,铜、钠杂质含量过多能使电阻片的压比升高。为了控制氧化锌中的杂质含量和提高电阻片的产品性能,建议生产上使用0号锌锭间接法生产的氧化锌,粉体颗粒形状最好接近球状,粒度范围最好控制在0.43-0.55μm之间。