Multi-discharge EDM coring of single crystal SiC ingot by electrostatic induction feeding method

A new technique of EDM coring of single crystal silicon carbide (SiC) ingot was proposed in this paper. Currently single crystal SiC devices are still of high cost due to the high cost of bulk crystal SiC material and the difficulty in the fabrication process of SiC. In the manufacturing process of SiC ingot/wafer, localized cracks or defects occasionally occur due to thermal or mechanical causes resulted from fabrication processes which may waste the whole piece of material. To save the part of ingot without defects and maximize the material utilization, the authors proposed EDM coring method to cut out a no defect ingot from a larger diameter ingot which has localized defects. A special experimental setup was developed for EDM coring of SiC ingot in this study and its feasibility and machining performance were investigated. Meanwhile, in order to improve the machining rate, a novel multi-discharge EDM coring method by electrostatic induction feeding was established, which can realize multiple discharges in single pulse duration. Experimental results make it clear that EDM coring of SiC ingot can be carried out stably using the developed experimental setup. Taking advantage of the newly developed multi-discharge EDM method, both the machining speed and surface integrity can be improved.     

锡矿山重复水利用的措施及效果

本介绍了锡矿山前闪星锑业有限责任公司如何加强对关键耗水工序的管理及提高重复水利用率的措施，并对所取得的效果进行了阐述，可供用水大户如何节水以借鉴。     

一个有效的圆片规模布局算法

本文提出了一个圆片规模布局算法，它是国外一个相应算法的改进形式，区别在于利用力定向布局法的方式不同。在相对位置阶段，该算法利用布局的层次特性将需确定所有电路元件相对位置的问题缩减至仅需确定宏电路元件相对位置的问题；在实际位置阶段，采用分治策略和取消前阶段层次划分的方式回避了需确定任意元实际位置的问题．其时间复杂度远低于国外相应算法．     

硅片和硅器件工艺中的背面损伤吸除技术

本文介绍了硅片背面的三种主要损伤吸除技术：机械损伤、激光辐照和离子注入技术。对这三种吸除技术的机理、工艺条件、应用情况和近来进展，作了详细的评述。     

An experimental investigation into soft-pad grinding of wire-sawn silicon wafers

Silicon is the primary semiconductor material used to fabricate microchips. A series of processes are required to manufacture high-quality silicon wafers. Surface grinding is one of the processes used to flatten wire-sawn wafers. A major issue in grinding of wire-sawn wafers is reduction and elimination of wire-sawing induced waviness. Results of finite element analysis have shown that soft-pad grinding is very effective in reducing the waviness. This paper presents an experimental investigation into soft-pad grinding of wire-sawn silicon wafers. Wire-sawn wafers from a same silicon ingot were used for the study to ensure that these wafers have similar waviness. These wafers were ground using two different soft pads. As a comparison, some wafers were also ground on a rigid chuck. Effectiveness of soft-pad grinding in removing waviness has been clearly demonstrated.     

GaN基LED与Si键合技术的研究

采用金属键合技术结合激光剥离技术将GaN基LED从蓝宝石衬底成功转移到Si衬底上。利用X射线光电子谱(XPS)研究不同阻挡层对Au向GaN扩散所起的阻挡作用,确定键合所需的金属过渡层。利用多层金属过渡层,在真空、温度400℃和加压300 N下实现GaN基LED和Si的键合,通过激光剥离技术将蓝宝石衬底从键合结构上剥离下来,形成GaN基LED/金属层/Si结构。用金相显微镜及原子力显微镜(AFM)观察结构的表面形貌,测得表面粗糙度(RMS)为12.1 nm。X射线衍射(XRD)和Raman测试结果表明,衬底转移后,GaN基LED的结构及其晶体质量没有发生明显变化,而且GaN与蓝宝石衬底间的压应力得到了释放,使得Si衬底上GaN基LED的电致发光(EL)波长发生红移现象。     

硅基表面无形貌改变的硫酸／过氧化氢氧化清洗

提出了一种利用硫酸／过氧化氢溶液氧化清洗硅基的方法．硅片经超声预清洗后,放入硫酸／过氧化氢溶液中,80℃下氧化清洗其表面的污染物．通过接触角检测,表征了清洗前后硅基表面的亲水性变化．通过原子力显微镜（AFM）表征了经硫酸／过氧化氢溶液清洗后硅基的表面形貌．结果显示,经硫酸／过氧化氢溶液亲水化清洗30min后的硅基表面的接触角为7．3°,显示出很强的亲水性,其表面均方根粗糙度（RMS）仅为0．03nm．因此,硫酸／过氧化氢氧化清洗法是一种硅基表面无形貌改变的亲水化清洗方法．     

晶片材料的超精密加工技术现状

文章介绍了晶片材料的超精密加工设备以及几种典型晶片材料加工工艺的最新发展 ,综述了几种典型超精密加工设备的特点以及单晶硅片、石英晶体、K9玻璃、钽酸锂单晶材料的加工工艺方法 ,探讨了晶片材料的超精密加工技术的发展趋势。     

Crack initiation in relation to the tool edge radius and cutting conditions in nanoscale cutting of silicon

In cutting of brittle materials, experimentally it was observed that there is a ductile–brittle transition when the undeformed chip thickness is increased from smaller to larger than the tool cutting edge radius of the zero rake angle. However, how the crack is initiated in the ductile–brittle mode transition as the undeformed chip thickness is increased from smaller to larger than the tool cutting edge radius has not been fully understood. In this study, the crack initiation in the ductile–brittle mode transition as the undeformed chip thickness is increased from smaller to larger than the tool cutting edge radius has been simulated using the Molecular Dynamics (MD) method on nanoscale cutting of monocrystalline silicon with a non-zero edge radius tool, from which, for the first time, a peak deformation zone in the chip formation zone has been found in the transition from ductile mode to brittle mode cutting. The results show that as the undeformed chip thickness is larger than the cutting edge radius, in the chip formation zone there is a peak deformation depth in association with the connecting point of tool edge arc and the rake face, and there is a crack initiation zone in the undeformed workpiece next to the peak deformation zone, in which the material is tensile stressed and the tensile stress is perpendicular to the direction from the connecting point to the peak. As the undeformed chip thickness is smaller than the cutting edge radius, there is no deformation peak in the chip formation zone, and thus there is no crack initiation zone formed in the undeformed workpiece. This finding explains well the ductile–brittle transition as the undeformed chip thickness increases from smaller to larger than the tool cutting edge radius.