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A. Ratna Phani 《Bulletin of Materials Science》1994,17(3):219-224
For the first time, thin films of boron nitride were deposited by chemical vapour deposition on to polished silicon and other
metal substrates using the inorganic compound H3BNH3 (aminodiborane) and ammonia as carrier gas. The substrate temperature was varied from 400 to 600°C. The films were chemically
inert and adherent to the substrates. The FTIR spectrum of the film showed B-N-B absorption at 800 cm−1, B-N stretching at 1056 cm−1, and also a weak absorption at 1340cm−1 corresponding to B-N-B bending vibration. Deposited films also exhibited X-ray diffraction pattern with interplanar spacing
with (002) plane of hexagonal boron nitride. 相似文献
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