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Tian Xie Haixia Zhao Zunhang Lv Guangwen Xie Yan He 《International Journal of Hydrogen Energy》2021,46(1):581-588
This work demonstrates a facile Nb2O5-decorated electrocatalyst to prepare cost-effective Ni–Fe–P–Nb2O5/NF and compared HER & OER performance in alkaline media. The prepared electrocatalyst presented an outstanding electrocatalytic performance towards hydrogen evolution reaction, which required a quite low overpotential of 39.05 mV at the current density of ?10 mA cm?2 in 1 M KOH electrolyte. Moreover, the Ni–Fe–P–Nb2O5/NF catalyst also has excellent oxygen evolution efficiency, which needs only 322 mV to reach the current density of 50 mA cm?2. Furthermore, its electrocatalytic performance towards overall water splitting worked as both cathode and anode achieved a quite low potential of 1.56 V (10 mA cm?2). 相似文献
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The eutectic 80Au/20Sn solder alloy is widely used in high power electronics and optoelectronics packaging. In this study, low cycle fatigue behavior of a eutectic 80Au/20Sn solder alloy is reported. The 80Au/20Sn solder shows a quasi-static fracture characteristic at high strain rates, and then gradually transforms from a transgranular fracture (dominated by fatigue damage) to intergranular fracture (dominated by creep damage) at low strain rates with increasing temperature. Coffin-Manson and Morrow models are proposed to evaluate the low cycle fatigue behavior of the 80Au/20Sn solder. Besides, the 80Au/20Sn solder has enhanced fatigue resistance compared to the 63Sn/37Pb solder. 相似文献
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Based on the voltage and current fluctuating phenomenon in the arc plasma load under the negative-pulse-bias, usingthe plasma physics theory and analysis of computer simulation expatiates that the nature of plasma load in vacuumarc plasma is a capacitance 相似文献
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Cheul-Ro Lee 《Journal of Electronic Materials》2002,31(4):327-331
We have investigated the growth characteristics of n-Al0.15Ga0.85N:Si/GaN and the electronic properties of Au/n-Al0.15Ga0.85N:Si diode structures grown by metal-organic chemical vapor deposition (MOCVD) with various Si incorporations. The Al0.15Ga0.85N:Si layers were grown on undoped GaN/sapphire (0001) epitaxial layers in a horizontal MOCVD reactor at the reduced pressure
of 300 torr. The mirrorlike surface, free of defects, such as cracks or hillocks, can be seen in the undoped Al0.15Ga0.85N epilayer, which was grown without any intentional flow of SiH4. However, many cracks are observed in the n-Al0.15Ga0.85N:Si, which was grown with Si incorporation above 1.0 nmol/min. While Au/n-Al0.15Ga0.85N:Si diodes having low incorporation of Si showed retively good rectifying behavior, the samples having high Si incorporation
exhibited leaky current-voltage (I-V) behavior. Particularly, the Au/n-Al0.15Ga0.85N:Si structure grown with Si incorporation above 1.0 nmol/min cannot be used for electrical rectification. Both added tunneling
components and thermionic emission influence the current transport at the Au/n-Al0.15Ga0.85N:Si barrier when Si incorporation becomes higher. 相似文献
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Effect of Rare Earth Element Cerium on Mechanical Properties and Morphology of TiN Coating Prepared by Arc Ion Plating 总被引:7,自引:0,他引:7
TiN coatings were deposited on polished substrates of W18Cr4V high speed steel by means of vacuum arc ion plating. The effect of cerium on adhesion between TiN coating and substrate was studied. The microstructures and composition of TiN coatings were also investigated by means of scanning electron microscope (SEM), Auger electron spectroscopy (AES), and X-ray diffraction (XRD) technique. It was found that cerium is an effective modifying agent and the addition of suitable amount of cerium to TiN coatings can produce relatively excellent properties such as micro-hardness, wear resistance, oxidation resistance and porosity. The experimental results show that the added cerium in TiN coatings makesa contribution to form the preferred direction along with a (111 ) or (222) close packed face, which may be one of the reasons that improves some properties mentioned above. 相似文献
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