一种高效率低谐波失真E类射频功率放大器的设计

研究了E类RF放大器的电路结构、工作原理,并提出了一个工作频率为1.8GHz,输出功率为26dBm,漏极效率达到66.5%的低谐波失真BiCMOS功率放大器,为了达到设计目标,文章采用了一些特殊的方法,包括采用两级放大结构,差分和交叉耦合反馈结构.最后用0.35μm SiGe BiCMOS工艺实现了E类射频功率放大器的设计.     

高效率E类射频功率放大器

研究了E类RF放大器的电路结构、工作原理、存在问题以及解决的方法--差分和交叉耦合反馈结构,最后给出了E类放大器的实例.由于具有低成本、高集成度、多功用等优点,MOS工艺在射频功率放大方面有很大的发展潜力.在本文中,用0.6 u m CMOS工艺实现了E类放大器的设计.     

Design of auto-tuning capacitive power transfer system for wireless power transfer

This paper presents the design of capacitive wireless power transfer systems based on a Class-E inverter approach. The main reason for adopting the Class-E inverter approach is because of its high efficiency, theoretically 100%. However, the operation of a Class-E inverter is highly sensitive to its circuit’s parameters. In a typical capacitive wireless power transfer application, the capacitive coupling distance between plates is subject to changes, and hence its power transfer efficiency is greatly affected if the Class-E inverter is properly tuned. This drawback motivates us to develop an auto frequency tuning algorithm for a Class-E inverter which maintains its power transfer efficiency in spite of the variations of capacitive coupling distances between plates and circuit’s parameters. Finally, simulation and experiment are carried out to verify the effectiveness of the auto frequency tuning algorithm.     

A cascode modulated class-E power amplifier for wireless communications

A cascode modulated CMOS class-E power amplifier (PA) is presented in this paper. It is shown that by applying a modulated signal to the gate of the cascode transistor the output power is modulated. The main advantage of the proposed technique is a high 35 dB output power dynamic range. The peak power added efficiency (PAE) is 35%. The concept of the cascode power control of class-E RF PA operating at 2.2 GHz with 18 dBm output power was implemented in a CMOS technology and the performance has been verified by measurements. The prototype CMOS PA is tested by single tone excitation and by enhanced data rates for GSM evolution (EDGE) modulated signal. Digital predistortion is used to linearize the transfer characteristic. The EDGE spectrum mask is met and the rms error vector magnitude (EVM) is less than 4° in the entire output power range.     

微带线碳化硅E类功率放大器设计

SiC MESFET由于其高击穿电压和低输出电容,适合用于设计E类功率放大器.设计了一种结构简单的微带线拓扑E类负载网络,可以匹配至标准电阻,且抑制高至5阶的谐波.用ADS软件进行电路仿真,在2.14 GHz频率点下,峰值功率附加效率(PAE)为70.5%,漏极效率可达80%,功率增益约为10 dB.     

基于E类放大器的电容耦合电能传输系统参数研究

由于接触式电能传输方式在转轴扭矩测试等特殊环境下使用的局限性,无线电能传输技术越来越受到国内外研究者的重视.分析了E类放大器在电容耦合电能传输系统的工作原理.在E类放大器与CLC调谐电路模型的基础上,基于E类放大器中开关管的零电压开关(ZVS)与零电压变化率开关(ZDS)条件,采用粒子群算法,设计出电路中的各个参数的最优解,并建立电容耦合电能传输系统的电路模型.应用Muhisim电路仿真软件对设计结果进行验证.仿真结果表明:该模型有效提高了机构的带负载能力.     

Impact of strain on hot electron reliability of dual-band power amplifier and integrated LNA-mixer RF performances

Channel hot-electron-induced degradation on strained MOSFETs is examined experimentally. BSIM stressed model parameters are extracted from measurement and used in Cadence SpectreRF simulation to study the impact of channel hot electron stress on dual-band class-E power amplifier and integrated low-noise amplifier-mixer RF performances. Channel hot electron effect decreases power efficiency of dual-band class-E power amplifier and increases the noise figure of low-noise amplifier-mixer combined circuit.     

RFID读写器中高集成度的CMOS功率放大器的设计和分析

介绍了设计的一个采用0．18μm的CMOS工艺的Class—E类的功率放大器。它可以提供最高为20dB的输出功率,以及输出功率在14．5dB的时候可以达到1dB的输出增益,最大的功率附加效率可以达到32．1％。文中还分析了这款功率放大器的频谱特性和RF协议。     

Class-E self-oscillation for the transmission of wireless power to implants

This paper develops the concept of Class-E self oscillation for wireless power delivery to implantable sensors with the comparison of several topologies. Power amplifiers and oscillators are considered as two separate blocks in wireless power transmission. By combining these topologies into a self-oscillating power transmitter, greater efficiency can be achieved. Various topologies are compared with measured hardware results, determining that a crystal feedback network provides both accuracy and high power output. A new crystal feedback Class-E self oscillator has been implemented by transmitting power through 2 cm-thick biological tissue. The paper includes a second order modelling and design process that can be used to design a Class-E self oscillator as an inductive power transmitter as well as measured results.     

射频E类功率放大器并联电容技术研究

为了使E类放大器工作效率最大,需要得到并联电容的确切数值.分析了含线性并联电容E类放大器的和含非线性晶体管寄生输出电容E类放大器的不同特性,给出了不同的设计方法.指出了E类功率放大器设计过程中分析和计算并联电容的难点,阐述了E类功率放大器中并联电容对电路性能的影响,同时给出了考虑并联电容的E类功率放大器的设计方法.