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1.
A. I. D’Souza M. G. Stapelbroek P. N. Dolan P. S. Wijewarnasuriya R. E. DeWames D. S. Smith J. C. Ehlert 《Journal of Electronic Materials》2003,32(7):633-638
The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg1−xCdxTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit
sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms
of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of
1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The
1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors
at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density
in the mid-10−15A/Hz1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth
in(f = 1 Hz, Vd = −60 mV, and Δf = 1 Hz) to dark current Id(Vd = −60 mV) was αSW-d = in/Id ∼ 1 × 10−3. The SWIR detectors measured at 0 mV under illuminated conditions had median αSW-P = in/Iph ∼ 7 × 10−6. For mid-wave infrared (MWIR) detectors, αMW-d = in/Id ∼ 2 × 10−4, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under
illuminated conditions at 98 K and −60 mV bias resulted in αMW-P = in/Iph = 4.16 ± 1.69 × 10−6. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias,
with a noise-current-to-photocurrent ratio, αMW-P, in the mid 10−6 range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, αLW-d = in/Id ∼ 6 × 10−6, for the best performers. The majority of the LWIR detectors exhibited αLW-d on the order of 2 × 10−5. The photo-induced 1/f noise had αLW-P = in/Iph ∼ 5 × 10−6. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if
this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps
are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as
a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular
bias. The 1/f noise was not a direct function of the applied bias. 相似文献
2.
B. A. Young J. R. Williams S. W. Deiker S. T. Ruggiero B. Cabrera 《Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment》2004,520(1-3):307-310
We summarize a continuing investigation into using ion implantation to alter the transition temperature of superconducting thin films. The primary motivation for the work presented here was to study the feasibility of using magnetic ion doping to replace the bi-layer Tc control process currently used for certain cryogenic detector applications at National Institute for Standards and Technology. The results from work with various ion species implanted into aluminum, molybdenum, titanium and tungsten host films are presented. 相似文献
3.
L. Verger J. P. Bonnefoy F. Glasser P. Ouvrier-Buffet 《Journal of Electronic Materials》1997,26(6):738-744
There has been considerable recent progress in II-VI semiconductor material and in methods for improving performance of the
associated radiation detectors. New high resistivity CdZnTe material, new contact technologies, new detector structures, new
electronic correction methods have opened the field of nuclear and x-ray imaging for industrial and medical applications.
The purpose of this paper is to review new developments in several of these fields. In addition, we will present some recent
results at LETI concerning first the CdTe 2-D imaging system (20 × 30 mm2 with 400 × 600 pixels) for dental radiology and second the CdZnTe fast pulse correction method applied to a 5 × 5 × 5 mm3 CdZnTe detector (energy resolution = 5% for detection efficiency of 85% at 122 keV) for medical imaging. 相似文献
4.
本文采用 2只扩散杯 ,一只选择渗透率较大的滤膜 ,使2 2 2 Rn和2 2 0 Rn能很容易的进入。另一只选择渗透率较小的滤膜 ,该滤膜只允许2 2 2 Rn进入 ,半衰期较短的2 2 0 Rn被阻挡在外面。通过不同滤膜扩散率的差异 ,改变探测器的空气交换率 ,从而达到同时测量2 2 2 Rn和2 2 0 Rn的目的 相似文献
5.
Micromachined silicon bolometers as detectors of soft X-ray, ultraviolet, visible and infrared radiation 总被引:1,自引:0,他引:1
《Sensors and actuators. A, Physical》1997,60(1-3):154-159
This paper presents the development of micromachined thin-film silicon microbolometers which can be used for detection of soft X-ray, UV, visible and infrared radiation. The detector structure is a 1 μm thick polysilicon/Si3N4 membrane suspended over a cavity. This structure has been obtained by anisotropic etching of silicon with a previously deposited polysilicon/Si3N4 sandwich. Alternatively, porous silicon has been used as the sacrificial layer. Devices have been characterized. Good values of the voltage responsivity and detectivity have been obtained. 相似文献
6.
Cryogenic detectors with superconducting tunnel junctions can provide an energy resolution improved by at least one order of magnitude compared with standard semiconductor detectors. While the detection principle was already demonstrated many years ago, the past years were dedicated to the transition from the laboratory sample to practical detectors. Our most favored detector design gives rise to tunnel junctions with electrodes of unequal energy gaps. In such hetero tunnel junctions bias conditions can be established which cause a negative signal current. We report the experimental verification of this effect, and we discuss the yield of charge signal of cryogenic detectors based upon superconducting tunnel junctions. 相似文献
7.
Understanding how the structure of the unit-cell affects the cryogenic performance of a Si power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is an important step toward optimizing of the device for cryogenic operations. In this paper, numerical simulations of the Si power Double Diffused MOSFET’ (DMOS) are performed at room temperature and cryogenic temperatures. Physically based models for temperature dependent silicon properties are employed in the simulations. The performances of power DMOS’ with various unit-cell structures are compared at both room temperature and low temperatures. The effect of the cell structure on the on-resistance and breakdown voltage of the device are analyzed. The simulation results suggest that the device optimized for room temperature operation can be further optimized at cryogenic temperatures. 相似文献
8.
利用线阵CCD实现宽波段、大视场短脉冲激光波长的远场测量 总被引:5,自引:1,他引:4
介绍了一种利用线阵CCD实现宽波段、大视场脉冲激光波长及方向远场测量的原理和实验装置;对强烈背景下激光信号的提取与处理方法进行了理论分析和实验研究,给出了系统信噪比与探测器件工作频率的理论公式;最后简要介绍了远场实验和测试结果 相似文献
9.
F. Nava G. Wagner C. Lanzieri P. Vanni E. Vittone 《Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment》2003,510(3):273-280
The development of SiC minimum ionising particle (MIP) detectors imposes severe constrains in the electronic quality and the thickness of the material due to the relatively high value of the energy required to produce an electron–hole pair in this material by MIP against the value for Si. In this work, particle detectors were made using semiconductor epitaxial undoped n-type 4H-SiC as the detection medium. The thickness of the epilayer is on the order of 40 μm and the detectors are realised by the formation of a nickel silicide on the silicon surface of the epitaxial layer (Schottky contact) and of the ohmic contact on the back side of 4H-SiC substrate. The low doping concentration (6×1013 cm−3) of the epilayer allows the detector to be totally depleted at relatively low reverse voltages (100 V). We present experimental data on the charge collection properties by using 5.486 MeV -particles impinging on the Schottky contact. A 100% charge collection efficiency (CCE) is demonstrated for reverse voltages higher than the one needed to have a depletion region equal to the -particle extrapolated range in SiC. The diffusion contribution of the minority change carriers to CCE is pointed out. By comparing measured CCE values to the outcomes of drift–diffusion simulation, values are inferred for the hole lifetime within the neutral region of the charge carrier generation layer. 相似文献
10.