发光二极管的研究现状与发展趋势

Ⅱ－Ⅵ族，Ⅲ－Ⅴ族化全物半导体是制作显示器件的重要材料，随着制作工艺日趋成熟，发光二极管已广泛地应用于 民经济各部门。要方要介绍了国内外发光二有管的研究两头和发展趋势。     

耦合腔激光器的波长调谐与频率调制特性分析

考虑用激光器与调制器直接耦合以及耦合槽的影响，用散射矩阵法及二步等效反射率法，对沟槽耦合腔激光器的波长调谐和频率调制特性的分析表明，数学处理简单，物理图像清晰。     

10W QCW operation of a proton implanted GaAlAs diode laser array

We report one thick layer of hard-baked photoresist mask.The laser array stripe pattern was defined by standard wet lithography.With this mask, a 10 W QCW(quasi-continuous wave) operation of a narrow proton implanted multiple stripe conventional single quantum well separate confinement heterostructure(SQW-SCH) GaAlAs diode laser array has been realized.These devices exhibit the lateral far-field radiation pattern of a phase-locked array of gain-guided semiconductor injection laser array. The twenty stripe laser array has a lateral far-field beam divergence full width at half maximum (FWHM) of less than 3°, and three twenty stripe laser array has a beam divergence in the plane of the junction of about 9°.     

太赫兹共振隧穿二极管探测器研究进展及应用

太赫兹波独特的性质使其在物理学、生物学、医疗诊断、无损检测、无线通信等领域有着广阔的应用前景。共振隧穿二极管(RTD)是一种基于量子隧穿效应的半导体器件,利用其负微分电阻和直流非线性特性,可以分别实现太赫兹波的产生和探测,近年来获得越来越多的关注。基于RTD的太赫兹探测器具有可室温工作、体积小、易集成、灵敏度高等特点,使其在未来短距离、超高速的太赫兹无线通信及万物互联等场景具备优势。本文将重点介绍太赫兹RTD探测器的研究进展及其应用进展,并对后续技术发展进行展望。     

Diode-Pumped Solid-State Lasers for Inertial Fusion Energy

We have begun building the Mercury laser system as the first in a series of new generation diode-pumped solid-state lasers for inertial fusion research. Mercury will integrate three key technologies: diodes, crystals, and gas cooling, within a unique laser architecture that is scalable to kilojoule and megajoule energy levels for fusion energy applications. The primary near-term performance goals include 10% electrical efficiencies at 10 Hz and 100J with a 2–10 ns pulse length at 1.047 m wavelength. When completed, Mercury will allow rep-rated target experiments with multiple chambers for high energy density physics research.     

2HL055恒流二极管参数测试

2HL055是贵州博越公司生产的恒流二极管,该类器件恒定电流大,极限电压低,可以直接驱动负载,但器件形成实验室成品后,没有进行过参数测试,其基本参数范围不能确定。文章拟通过试验,进一步测试2HL055器件的基本参数,并确定部分参数的测试方法。     

220GHz 次谐波混频器设计

本文介绍了一种基于平面肖特基势垒二极管的220GHz 次谐波混频器的设计。该混频器采用Teratech 公司的反 向并联二极管对,安装在0.05mm 厚的石英基片悬置微带上。采用HFSS 和ADS 联合仿真,使得混频器在射频频率为 215GHz~225GHz 范围内仿真所得变频损耗低于8dB,并在219GHz 时取得最佳变频损耗6.75dB。该混频器具有结构简单, 易于加工,变频损耗低的优点。     

Spectral response and field enhanced reverse current in a-Ge:H nip photodiodes

We demonstrate the effectiveness of using a high Ar+H₂ dilution of GeH₄, high pressure, and low substrate temperatures in producing device-grade a-Ge:H through standard radio-frequency glow discharge deposition. The enhanced plasma chemistry encourages the production, heating, and incorporation of nanoparticles to increase order, while the low substrate temperature encourages hydrogen incorporation to saturate dangling bonds. We utilize the material in nip photodiodes illuminated through the n-side, and demonstrate a device with an i-layer thickness of only 60 nm showing J_SC=20.6 mA/cm² (AM1.5 Efficiency=2.1%). Temperature-dependent conductivity and bias-dependent spectral response measurements suggest that a non-uniform field distribution and a defect-rich region near the i–p interface are currently the limiting factors for the device performance.     

Qualification of plastic encapsulated microcircuits (PEM) for avionicsBased on ``Plastic Encapsulated Microcircuits (PEM) Qualification Testing'''', by J. A. Scalise, which appeared in the Proceedings of the 46th Electronic Components and Technology Conference, Orlando, FL, U.S.A., 28–31 May 1996, pp. 392–397. © 1996 IEEE.

Microcircuit package qualification testing is used to establish the reliability of integrated circuit processes and devices as they relate to part packaging. This paper presents the results of package qualification tests conducted on plastic encapsulated microcircuits (PEMs) and plastic discrete devices (diodes, transistors) used in avionics applications. Highly accelerated stress test (HAST) and temperature cycle (TC) test results, including part failure mechanisms and associated failure rates, are provided. A variety of plastic package styles and integrated circuit functions have been tested. Examples of package styles tested include small outline (SO), plastic leaded chip carrier (PLCC), thin small outline package (TSOP), plastic quad flat package (PQFP) and plastic dual-in-line (PDIP).Manufacturers' devices have been evaluated and various plastic compounds have been compared to determine which provide optimum reliability. The testing showed that package qualification performance of PEMs is affected by type of compound, passivation (including die coat) and die size. HAST failures are caused by moisture penetration of the package while temperature cycle failures result from coefficient of thermal expansion (CTE) mismatch effects.     

可见光激光二极管开发现状与市场——市场状况

本文是可见光激光二极管开发现状与市场的最后部分,主要介绍器件应用领域,产销量,价格与趋势.