Good dielectric performance and broadband dielectric polarization in Ag,Nb co-doped TiO2

Due to the demand of miniaturization and integration for ceramic capacitors in electronic components market, TiO₂-based ceramics with colossal permittivity has become a research hotspot in recent years. In this work, we report that Ag⁺/Nb⁵⁺ co-doped (Ag_1/4Nb_3/4)_xTi_1−xO₂ (ANTOx) ceramics with colossal permittivity over a wide frequency and temperature range were successfully prepared by a traditional solid–state method. Notably, compositions of ANTO0.005 and ANTO0.01 respectively exhibit both low dielectric loss (0.040 and 0.050 at 1 kHz), high dielectric permittivity (9.2 × 10³ and 1.6 × 10⁴ at 1 kHz), and good thermal stability, which satisfy the requirements for the temperature range of application of X9R and X8R ceramic capacitors, respectively. The origin of the dielectric behavior was attributed to five dielectric relaxation phenomena, i.e., localized carriers' hopping, electron–pinned defect–dipoles, interfacial polarization, and oxygen vacancies ionization and diffusion, as suggested by dielectric temperature spectra and valence state analysis via XPS; wherein, electron-pinned defect–dipoles and internal barrier layer capacitance are believed to be the main causes for the giant dielectric permittivity in ANTOx ceramics.     

Coupling in situ experiments and modeling – Opportunities for data fusion,machine learning,and discovery of emergent behavior

This paper reviews recent studies, that not only includes both experiments and modeling components, but celebrates a close coupling between these techniques, in order to provide insights into the plasticity and failure of polycrystalline metals. Examples are provided of studies across multiple-scales, including, but not limited to, density functional theory combined with atom probe tomography, molecular dynamics combined with in situ transmission electron miscopy, discrete dislocation dynamics combined with nanopillars experiments, crystal plasticity combined with digital image correlation, and crystal plasticity combined with in situ high energy X-ray diffraction. The close synergy between in situ experiments and modeling provides new opportunities for model calibration, verification, and validation, by providing direct means of comparison, thus removing aspects of epistemic uncertainty in the approach. Further, data fusion between in situ experimental and model-based data, along with data driven approaches, provides a paradigm shift for determining the emergent behavior of deformation and failure, which is the foundation that underpins the mechanical behavior of polycrystalline materials.     

Comparison of spatial compositional uniformity and dislocation density for organometallic vapor phase epitaxial Hg1−x CdxTe grown by the direct alloy and interdiffused growth processes

Etch pit density and spatial compositional uniformity data are presented for organometallic vapor phase epitaxial Hg_1−x Cd_x Te grown by the direct alloy and interdiffused growth methods. For alloy growth, composition variation is as low as Δx=0.004 and 0.02 over 2- and 3-in diam areas, respectively; while for growth on CdZnTe substrates, etch pit density values lower than 2×10⁵ cm⁻² have been achieved. For interdiffused growth on CdZnTe, etch pit density values lower than 5×10⁵ cm⁻² have been obtained, while the composition variation is usually Δx≤0.004 and 0.014 over 2- and 3-in diam areas, respectively. Data demonstrate that the choice of particular CdZnTe substrate strongly affects the subsequent etch pit density measured in the layer. Reasonably uniform n-type doping over 3-in diam area using the source triethylgallium is also reported for both growth methods.     

Defect structure of gold introduced by high-speed deformation

The effect of deformation speed on defect structures introduced into bulk gold specimens at 298 K has been investigated systematically over a wide range of strain rate from ′=10⁻² to 10⁶ s⁻¹. As strain rate increased, dislocation structure changed from heterogeneous distribution, so-called cell structure, to random distribution. Also, stacking fault tetrahedra (SFTs) were produced at anomalously high density by deformation at high strain rate. The anomalous production of SFTs observed at high strain rate is consistent with the characteristic microstructure induced by dislocation-free plastic deformation, which has been recently reported in deformation of gold thin foils. Thus, the results of the present study indicate that high-speed deformation induces an abnormal mechanism of plastic deformation, which falls beyond the scope of dislocation theory. Numerical analysis of dislocation structure and SFTs revealed that the transition point of variation of deformation mode is around the strain rate of 10³ s⁻¹.     

较大直径、低位错锑化铟单晶的研制

本文简要介绍了用ＴＤＫ－３６单晶炉拉制的较大直径（φ＝２５ｍｍ）、低位错（＜１００ｃｍ￣（－２））的锑化铟单晶的理论和实践。通过对晶体生长室内温场，特别是内外坩埚尺寸的调整及对循环水流量的控制，成功地拉制出较大直径、低位错的锑化铟单晶。     

影响碲镉汞晶体电子迁移率的主要因素

通过把迁移率的实测值与影响ＨｇＣｄＴｅ晶体电子迁移率的主要散射机构进行对比，得出结论：位错是ＨｇＣｄＴｅ晶体低温电子迁移率降低的主要原因。     

Rate mechanisms of plasticity in semi-crystalline polyethylene

Based on our experiments on polyethylene where we have observed a constant level of plastic resistance, independent of lamella thickness exceeding 40 nm, we have fundamentally re-considered the rate controlling mechanisms of crystal plasticity in semi-crystalline polymers. In this we have not only re-examined and made modifications to the widely accepted mechanism of Young (Young RJ. Mater Forum 1988;11:210.) of monolithic nucleation of screw dislocations from edges of crystalline lamellae predicting an increase in plastic resistance with increasing lamella thickness, but we are proposing here two new modes of nucleation of both edge and screw dislocation half loops from lamella faces that are independent of lamella thickness. These two new modes of dislocation nucleation explain well the observed transition from a plastic resistance increasing with lamella thickness to one of constant resistance above a lamella thickness of ca. 35 nm in polyethylene. They also provide a more satisfactory framework to explain the temperature and strain rate dependence of the plastic resistance of polyethylene and predict the observed levels of activation volumes determined by us.     

Global optimum of microstructure parameters in the CMWP line-profile-analysis method by combining Marquardt-Levenberg and Monte-Carlo procedures

Line profile analysis of X-ray and neutron diffraction patterns is a powerful tool for determining the microstructure of crystalline materials. The Convolutional-Multiple-Whole-Profile (CMWP) procedure is based on physical profile functions for dislocations, domain size, stacking faults and twin boundaries. Order dependence, strain anisotropy, hkl dependent broadening of planar defects and peak shape are used to separate the effect of different lattice defect types. The Marquardt-Levenberg (ML) numerical optimization procedure has been used successfully to determine crystal defect types and densities. However, in more complex cases like hexagonal materials or multiple phases the ML procedure alone reveals uncertainties. In a new approach the ML and a Monte-Carlo statistical method are combined in an alternative manner. The new CMWP procedure eliminates uncertainties and provides globally optimized parameters of the microstructure.     

Stress dependence of the creep behaviors and mechanisms of a third-generation Ni-based single crystal superalloy

Elevated temperature creep behaviors at 1100℃ over a wide stress regime of 120–174 MPa of a thirdgeneration Ni-based single crystal superalloy were studied. With a reduced stress from 174 to 120 MPa,the creep life increased by a factor of 10.5, from 87 h to 907 h, presenting a strong stress dependence.A splitting phenomenon of the close-(about 100 nm) and sparse-(above 120 nm) spaced dislocation networks became more obvious with increasing stress. Simultaneously, a_0010 superdislocations with low mobilities were frequently observed under a lower stress to pass through γ'precipitates by a combined slip and climb of two a_0110 superpartials or pure climb. However, a_0110 superdislocations with higher mobility were widely found under a higher stress, which directly sheared into γ'precipitates.Based on the calculated critical resolved shear stresses for various creep mechanisms, the favorable creep mechanism was systematically analyzed. Furthermore, combined with the microstructural evolutions during different creep stages, the dominant creep mechanism changed from the dislocation climbing to Orowan looping and precipitates shearing under a stress regime of 137–174 MPa, while the dislocation climbing mechanism was operative throughout the whole creep stage under a stress of 120 MPa, resulting a superior creep performance.