Ba-doped ZnO nanostructure: X-ray line analysis and optical properties in visible and low frequency infrared

In this work, X-ray diffraction analysis and optical properties of pure and Ba-doped ZnO nanoparticles prepared by the precipitation method were investigated. X-ray analysis was employed to evaluate the micro structural parameters of ZnO nanoparticles in terms of crystallite sizes and lattice strain by the Williamson–Hall method. The average crystallite size of Ba-doped ZnO nanoparticles estimated by the Williamson–Hall method varied as the doping concentration increased. The effect of Ba doping on the photoluminescence (PL) emission spectrum of ZnO was also investigated. The temperature dependence of the PL emissions was also studied, and it was found that at low temperature, the samples show stronger emissions than those at room temperature in both UV and visible regions. As a final point, the FT–IR reflection spectrum along with Kramers–Kronig (K–K) method and classical dispersion theory was applied to obtain optical properties of the samples at low frequency infrared regime.     

Effect of doping elements on ZnO etching characteristics with CH4/H2/Ar plasma

Effect of doping elements on the etching characteristics of doped-ZnO (Ag, Li, and Al) thin films, etched with a positive photoresist (PR) mask, and an etch process window for infinite etch selectivity were investigated by varying the CH₄ flow ratio and self-bias voltage, V_dc, in inductively coupled CH₄/H₂/Ar plasmas. Increased doping of ZnO films decreased the etch rates significantly presumably due to lower volatility of reaction by-products of doped Li, Ag, and Al in CH₄/H₂/Ar plasmas. The etch rate of AZO (Al-doped ZnO) was most significantly decreased as the doping concentration is increased from 4 to 10 wt%. It was found that process window for infinite etch selectivity of the doped ZnO to the PR is closely related to a balance between deposition and removal processes of a-C:H (amorphous hydrogenated carbon) layer on the doped-ZnO surface. Measurements of optical emission of the radical species in the plasma and surface binding states by optical emission spectroscopy (OES) and X-ray photoelectron spectroscopy (XPS), respectively, implied that the chemical reaction of CH radicals with Zn atoms in doped-ZnO play an important role in determining the doped-ZnO etch rate together with an ion-enhanced removal mechanism of a-C:H layer as well as Zn(CH_x)_y etch by-products.