EVA和BSC的比较与分析研究

文章介绍了EVA和BSC两种业绩评价方法,通过对其相关概念的引入、EVA和BSC各自适合的企业以及整合的相关性、可行性的分析。     

Parallel algorithm for numerical self-consistent field theory simulations of block copolymer structure

An efficient algorithm is presented for numerically evaluating a self-consistent field theoretic (SCFT) model of block copolymer structure. This algorithm is implemented on a distributed memory parallel cluster in order to solve the SCFT equations on large computational grids. Simulation results are presented for a two-component molten mixture of a symmetric ABA triblock copolymer with an A homopolymer. These results illustrate a case in which simulating a large system is required to resolve features with a wide range of length scales.     

1 000 t/a书籍装订热熔胶技术经济分析

介绍了书籍装订热熔胶生产工艺及产品的技术指标，对1000t/a生产装置的投资与产品成本进行了核算。分析结果表明，总投资110万元，年利润达266万元。     

蓝牙与IEEE802.11g系统的共存

蓝牙与IEEE802.11g无线局域网(Wireless Local Area Network,WLAN)都工作在2.4GHz频段上,因此它们之间存在一定的干扰。分析了蓝牙与IEEE802.11g通信系统之间的干扰,并提出了解决这一问题的两种方法:自适应跳频和删除标记法,并对两种方法的性能做了比较。     

IEEE 802.11g性能分析及应用

全面介绍IEEE802.11g标准的无线局域网,详细讲述IEEE802.11g草案标准的概念、产生背景、特点、构件及其体系结构和发展前景,探讨实现IEEE802.11gWLAN所需的关键技术及其双频多模应用方式,同时分析IEEE802.11g标准的网络性能。     

EVA基质PTC特性材料制备与导电机理分析

本文简述了以EVA为基质材料制备有机PTC特性材料的实验,实测了样品有关特性,并用非线性回归方法讨论了其导电机理.这对指导温度传感器的设计有一定帮助.     

PP－g－AA的制备和表征

用熔融接枝方法制备了聚丙烯－ｇ－丙烯酸（ＰＰ－ｇ－ＡＡ）。用光电子能谱，广角Ｘ射线衍射，红外光谱和化学滴定方法对接枝物进行了定性和定量表征。讨论了单体和引发剂浓度对接枝率的影响，确定了用红外光谱法测定接枝物含量的经验公式     

现代住区规划的几点思考

通过对居住区规划中住区交通组织、环境建设,以及住宅配套现实处理方法的分析,指出现代住区的规划要根据当地实际情况,因地制宜组织住区交通网络,合理整合住宅内外环境,适度超前建设配套设施。     

Effects of extended dislocations on charge distribution in GaN epilayer

We have investigated the effect of extended dislocations (0.5-3 μm) on charge distribution in GaN epilayer grown by metalorganic chemical vapor deposition on (0001) sapphire using atomic force microscopy (AFM) and scanning surface potential microscopy (SSPM). It has been observed for the surface at the extended dislocations present in undoped GaN film to be negatively charged showing 0.04-0.2 V higher potential relative to regions that contain no dislocations. In addition to the higher potential at the dislocation core, the surrounding surfaces, including the edge of the dislocations, are also negatively charged in a symmetric way around the dislocations revealing crater-shaped higher potential regions (∼0.04 V) relative to surrounding dislocation-free area. The experimental results show that the protrusion-type of dislocation is also negatively charged and its potential is dependent on the size of dislocation.     

IEEE802.11g研究综述

全面介绍了IEEE802.11g标准的WLAN，详细讲述了IEEE802.11g草案标准的概念、特点、构件及体系结构、发展前景等，并探讨了实现IEEE802.11g WLAN所需的几项关键技术，同时分析了IEEE802.11g标准的网络性能。其关键技术包括直序列扩频调制技术及补码键控技术，包二进制卷积，正交频分复用技术等。有关IEEE802.11g的兼容性，同频共存性，自身的OFDM问题分析将成为研究的热点。