中国压铸市场的机遇与挑战

评述了中国压铸市场的现状和发展前景。2002年，全国压铸件总产量为62．4万t，其中：铝合金压铸件产量为41．56万t，锌合金压铸件产量为19．82万t，镁合金压铸件产量为0．50万t，铜合金压铸件产量为0．53万t，分别占66．6％，31．87％，0．8％，0．8％；压铸机年销售量近1800台；2lD02年，全国模具总产值达到360亿元，其中压铸模约占10％；全国压铸行业中，外资企业、民营企业、乡镇企业以及私营企业合计已达到压铸企业总数的80％以上，特大型压铸企业集团开始涌现。     

Excitation energy-dependent nature of Raman scattering spectrum in GaInNAs/GaAs quantum well structures

The excitation energy-dependent nature of Raman scattering spectrum, vibration, electronic or both, has been studied using different excitation sources on as-grown and annealed n- and p-type modulation-doped Ga_1 − xIn_xN_yAs_1 − y/GaAs quantum well structures. The samples were grown by molecular beam technique with different N concentrations (y = 0%, 0.9%, 1.2%, 1.7%) at the same In concentration of 32%. Micro-Raman measurements have been carried out using 532 and 758 nm lines of diode lasers, and the 1064 nm line of the Nd-YAG laser has been used for Fourier transform-Raman scattering measurements. Raman scattering measurements with different excitation sources have revealed that the excitation energy is the decisive mechanism on the nature of the Raman scattering spectrum. When the excitation energy is close to the electronic band gap energy of any constituent semiconductor materials in the sample, electronic transition dominates the spectrum, leading to a very broad peak. In the condition that the excitation energy is much higher than the band gap energy, only vibrational modes contribute to the Raman scattering spectrum of the samples. Line shapes of the Raman scattering spectrum with the 785 and 1064 nm lines of lasers have been observed to be very broad peaks, whose absolute peak energy values are in good agreement with the ones obtained from photoluminescence measurements. On the other hand, Raman scattering spectrum with the 532 nm line has exhibited only vibrational modes. As a complementary tool of Raman scattering measurements with the excitation source of 532 nm, which shows weak vibrational transitions, attenuated total reflectance infrared spectroscopy has been also carried out. The results exhibited that the nature of the Raman scattering spectrum is strongly excitation energy-dependent, and with suitable excitation energy, electronic and/or vibrational transitions can be investigated.     

Crystal structure and physical properties of PuPd5Al2

We report on the crystallographic aspects and the basic properties of the plutonium based compound PuPd₅Al₂. This material is antiferromagnetic at T_N = 5.6 K and does not present any hint of superconductivity down to 2 K. This material crystallizes in the ZrNi₂Al₅-type of structure with lattice parameters: a = 4.1302 Å and c = 14.8428 Å. The magnetization, heat capacity and electrical resistivity measurements indicate clearly antiferromagnetic order at T_N = 5.6 K. This material is compared to the structurally related cerium based material CePd₅Al₂ presenting superconductivity induced by pressure.     

Investigations on the effect of 100 MeV Ni ions irradiated chloride vapour phase epitaxy (Cl-VPE) grown GaN epilayers

Gallium nitride (GaN) epilayers have been grown by chloride vapour phase epitaxy (Cl-VPE) technique and the grown GaN layers were irradiated with 100 MeV Ni ions at the fluences of 5 × 10¹² and 2 × 10¹³ ions/cm². The pristine and 100 MeV Ni ions irradiated GaN samples were characterized using X-ray diffraction (XRD), UV-visible transmittance spectrum, photoluminescence (PL) and atomic force microscopy (AFM) analysis. XRD results indicate the presence of gallium oxide phases after Ni ion irradiation, increase in the FWHM and decrease in the intensity of the GaN (0 0 0 2) peak with increasing ion fluences. The UV-visible transmittance spectrum and PL measurements show decrease in the band gap value after irradiation. AFM images show the nanocluster formation upon irradiation and the roughness value of GaN increases with increasing ion fluences.     

使用声发射测试结果预判岩爆等级

岩爆等级预判是进行岩爆灾害预警的重要基础,而岩爆本身的复杂性给岩爆预判带来了很大困难,为实现岩爆等级快速、准确地预判,采用声发射测试技术获取不同方向（纵向、斜向和横向）岩石的标准试样（直径为50mm、高度为100mm）在室内单轴压缩加载过程中的声发射特征,基于不同方向试件主破裂前的累积声发射能量E_q与最终破裂后的累积声发射能量E之比分别提出相应的岩爆等级预判新方法,并将预判结果与实际岩爆等级、传统方法的岩爆预判结果进行了对比。结果表明:基于不同方向试件E_q/E值的岩爆等级预判结果准确率均达到80%,与实际岩爆等级吻合性较好;与传统岩爆预判方法相比,基于E_q/E值的岩爆等级预判结果更为可靠;使用不同方向试件E_q/E值进行岩爆等级预判时,预判结果的准确率从高到低依次为纵向、斜向和横向。研究结果对于岩爆灾害防治具有一定的参考价值。     

Circular footings resting on geotextile-reinforced sand bed

The note pertains to an experimental study made on circular footings resting on semi-infinite layer of sand reinforced with geotextiles. Using the concept of homogenization of such soils, both analytical and numerical analyses have also been conducted to predict the load-settlement behavior and compared with experimental observations. The study highlights the effect of the footing size, number of reinforcing layers, reinforcement placement pattern and bond length and the relative density of the soil on the load-settlement characteristics of the footings.     

滚珠丝杠副支承方式的力学模型及对加工精度的影响

本文简述了滚珠丝杠副的支承方式,分析了它们在自重作用下的力学模型,并推导出它们在不同支承方式下的变形量的数学表达式即弯曲曲线方程;同时在加工精密工件时,就自重原因引起丝杠弯曲导致的加工工件的误差进行了分析。     

Electronic properties of GaxIn1−xP from pseudopotential calculations

Based on a pseudopotential scheme within the virtual crystal approximation, we present a theoretical investigation of the electronic properties of Ga_xIn_1−xP. The effect of alloy disorder on energy band-gaps has been examined and found to be not negligible. The composition dependence of energy band-gaps and electron effective mass is shown to be non-linear. In agreement with experiment, a direct-to-indirect band-gap crossover is found to occur close to x = 0.7. Besides, the electron valence and conduction charge densities for Ga_0.50In_0.50P derived from pseudopotential band-structure calculations are reported and trends in bonding and ionicity are discussed.     

Comparative study between electrical, optical and structural properties of annealed heavily carbon doped GaAs

Heavily C-doped GaAs epilayers have been grown by atmospheric pressure metalorganic vapor phase epitaxy with hole concentration ranging from 2×10¹⁹ to 1.6×10²⁰ cm⁻³. In order to study the stability of C acceptors over this range, the films have been annealed at 810 °C for 10 min under two mixture gas AsH₃+H₂ or only N₂. Annealing of the layers resulted in a decrease in carrier concentration, carrier mobility and lattice mismatch with undoped GaAs. The lattice matching conditions of C-doped GaAs layers were systematically investigated by using X-ray high-resolution diffraction space mapping. The comparison between electrical and structural before and after annealing of layers properties indicates that the simultaneous decrease of carrier concentrations, Hall mobility and mismatch is probably related to an increase of compensation. Basing on a theoretical calculation of mobility as a function of hole concentration and Vegard's law, we estimate that the compensation comes from the formation of (C-C)⁺_[100] interstitial couples. This fact does not exclude definitively the possibility of the formation of other species such as H-C_As especially for hole concentration lower than 5×10¹⁹ cm⁻³. An annealing under AsH₃+H₂ ameliorates the crystalline properties contrarily to an annealing under N₂. The optical properties have been investigated using Raman spectroscopy. Two main Raman features are observed before and after annealing of the layers: the longitudinal-optic (LO) phonon mode and the coupled plasmon-LO phonon (LOPC). As for as grown layers, the intensity ratio I_LOPC/I_LO between the intensity of LOPC peak and the LO peak increases by increasing the hole concentration. This ratio is about 1 after an annealing of layers under AsH₃+H₂. An unusual change of I_LOPC/I_LO ratio is observed in samples annealed under N₂. Indeed, for high doping (∼10²⁰ cm⁻³) the ratio I_LOPC/I_LO<1 and for relatively low doping (∼2×10¹⁹ cm⁻³) the ratio I_LOPC/I_LO>1. This behaviour is probably related to the high sensibility of Raman measurement not only to the hole concentration change but also to the surface quality.     

Characterization and Cu electroless plating of laser-drilled through-wafer via-holes in GaN/Al2O3

GaN on Al₂O₃ was drilled with a high power Nd:YAG laser. Micro-Raman spectroscopy showed that the induced damage was nominal at about 15 µm from the edge of the drilled through-wafer via-holes. Cu plating was accomplished using an electroless plating technique. FIB was employed to expose the interface between electrolessly plated Cu and GaN on the sidewall of the drilled holes, followed by SEM/EDX to confirm that the sidewall of the drilled holes was successfully covered with Cu. Cu electroless plating after laser drilling has the potential to simplify device layout and improve device integration.