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排序方式: 共有572条查询结果,搜索用时 31 毫秒
1.
《Calphad》2020
This publication contains the thermodynamic results received by the drop calorimetry method. The experiments were conducted for four different cross sections, at the temperature of 1080 K. The investigated alloys were as follows: (Ga0.75Li0.25)1-xGex, (Ge0.50Li0.50)1-xGax, (Ga0.50Li0.50)1-xGex, (Ga0.25Li0.75)1-xGex. The mixing enthalpy changes measured for all four cross sections of the Ga-Ge-Li system are characterized by negative deviations from the ideal solutions. The Muggianu model with the ternary interaction parameters was applied to elaborate the experimental data of the mixing enthalpy change with the use of the optimized thermodynamic parameters of the binary systems available in the literature. 相似文献
2.
3.
4.
A. Hori 《Thin solid films》2007,515(10):4480-4483
Electroluminescence (EL) spectral intensity in the high-brightness blue and green InGaN single-quantum-well (SQW) diodes has been comparatively studied over a wide temperature range and as a function of injection current. When the necessary forward bias conditions to get a certain current level are different, it is found that the anomalous EL quenching previously observed below 100 K for the SQW diodes strongly changes and shows a striking difference between the blue and green SQW diodes. This unusual EL evolution pattern is attributed to both internal and external fields, suggesting the importance of the internal piezoelectric field effects on the efficient carrier capture processes by localized tail states within the SQW under the presence of high-density misfit dislocations. 相似文献
5.
This paper reports a method to produce networks of crystalline gallium oxide comprised of one‐dimensional (1D) nanostructures. Because of the unique arrangement of wires, these crystalline networks are termed as ‘nanowebs’. Nanowebs are of great technological interest since they contain wire densities of the order of 109 cm–2. A possible mechanism for the fast self‐assembly of crystalline metal oxide nanowires involves multiple nucleation and coalescence via oxidation–reduction reactions at the molecular level. The preferential growth of nanowires parallel to the substrate enabled them to coalesce into regular polygonal networks. The individual segments of the polygonal network consist of both nanowires and nanotubules of β‐gallium oxide. Individual wire properties contribute to a nanoweb’s overall capacity and the implications for devices based on nanowebs are expected to be enormous. 相似文献
6.
The growth of nominally undoped GaSb layers by atmospheric pressure metalorganic vapor phase epitaxy on GaSb and GaAs substrates
is studied. Trimethylgallium and trimethylantimony are used as precursors for the growth at 600°C in a horizontal reactor.
The effect of carrier gas flow, V/III-ratio, and trimethylgallium partial pressure on surface morphology, electrical properties
and photoluminescence is investigated. The optimum values for the growth parameters are established. The carrier gas flow
is shown to have a significant effect on the surface morphology. The optimum growth rate is found to be 3–8 μm/ h, which is
higher than previously reported. The 2.5 μm thick GaSb layers on GaAs are p-type, having at optimized growth conditions room-temperature
hole mobility and hole concentration of 800 cm2 V−1 s−1 and 3·1016 cm-3, respectively. The homoepitaxial GaSb layer grown with the same parameters has mirror-like surface and the photoluminescence
spectrum is dominated by strong excitonic lines. 相似文献
7.
The energies of various steps on the As-terminated GaAs(001)-2 × 4 surface are evaluated using a novel, approximate method of “linear combination of structural motifs”. It is based on the observation that previous total energy minimizations of semiconductor surfaces produced invariably equilibrium structures made of the same recurring local structural motifs, e.g. tetrahedral fourfold Ga, pyramidal threefold As, etc. Furthermore, such surface structures were found to obey consistently the octet rules as applied to the local motifs. We thus express the total energy of a given semiconductor surface as a sum of (i) the energies M of the local structural motifs appearing in the surface under consideration and (ii) an electrostatic term representing the Madelung energy of point charges resulting from application of the octet rule. The motif energies are derived from a set of pseudopotential total energy calculations for flat GaAs(001) surfaces and for point defects in bulk GaAs. This set of parameters suffices to reproduce the energies of other (001) surfaces, calculated using the same pseudopotential total energy approach. Application to GaAs(001)-2 × 4 surfaces with steps reveals the following. (i) “Primitive steps”, defined solely according to their geometries (i.e. step heights, widths and orientations) are often unstable. (ii) Additional, non-geometric factors beyond step geometries such as addition of surface adatoms, creation of vacancies and atomic rebonding at step edges are important to lower step energies. So is step-step interaction. (iii) The formation of steps is generally endothermic. (iv) The formation of steps with edges parallel to the direction of surface As dimers (A steps) is energetically favored over the formation of steps whose edges are perpendicular to the As dimers (B steps). 相似文献
8.
The effects of dopant (Ga) concentration, post-heat treatment temperatures, and different heat treatment environments on the morphology, electrical and optical properties of ZnO films were studied. ZnO films doped with Ga are derived from non-alkoxide zinc acetate via the alcoholic route by a sol–gel dip-coating technique. Introduction of Ga, as a dopant, can reduce crystallite size, which is attributed to the increased number of nucleation centers. Grain growth was also observed at high post-heat treatment temperature. It was discovered that different post-heat treatment environments (air or reduced atmosphere) did not change the structure orientation, microstructure shapes and size. It was found that the sheet resistance, Rs could be reduced by an order of magnitude, using post-heat treatment in reduced atmosphere (4%H2–96%N2). 相似文献
9.
A. Edwards Mulpuri V. Rao B. Molnar A. E. Wickenden W. Holland P. H. Chi 《Journal of Electronic Materials》1997,26(3):334-339
Doping by ion implantation using Si, O, Mg, and Ca has been studied in single crystal semi-insulating and n-type GaN grown
on a-sapphire substrates. The n-and p-type dopants used in this study are Si and O; Mg and Ca, respectively. Room temperature
activation of Si and O donors has been achieved after 1150°C annealing for 120 s. The activation of Mg and Ca acceptors is
too low to measure at both room temperature and 300°C. Using higher doses to achieve a measurable p-type conduction increases
the amount of damage created by the implantation. Rutherford back scattering measurements on this material indicate that the
damage is still present even after the maximum possible heat treatment. Secondary ion mass spectrometry measurements have
indicated a redistribution in the measured profiles of Mg due to annealing. 相似文献
10.
Seong Hyuk Lee Junghee Lee Kwan-Gu Kang Joon Sik Lee 《Journal of Mechanical Science and Technology》2006,20(8):1292-1301
This article investigates numerically the carrier-phonon interactions in thin gallium arsenide (GaAs) film structures irradiated
by subpicosecond laser pulses to figure out the role of several recombination processes on the energy transport during laser
pulses and to examine the effects of laser fluences and pulses on non-equilibrium energy transfer characteristics in thin
film structures. The self-consistent hydrodynamic equations derived from the Boltzmann transport equations are established
for carriers and two different types of phonons, i.e., acoustic phonons and longitudinal optical (LO) phonons. From the results,
it is found that the two-peak structure of carrier temperatures depends mainly on the pulse durations, laser fluences, and
nonradiative recombination processes, two different phonons are in nonequilibrium state within such lagging times, and this
lagging effect can be neglected for longer pulses. Finally, at the initial stage of laser irradiation, SRH recombination rates
increases sufficiently because the abrupt increase in carrier number density no longer permits Auger recombination to be activated.
For thin GaAs film structures, it is thus seen that Auger recombination is negligible even at high temperature during laser
irradiation. 相似文献