In this work, we focus on the Ge nanoparticles (Ge-np) embedded ZnO multilayered thin films. Effects of reactive and nonreactive growth of ZnO layers on the rapid thermal annealing (RTA) induced formation of Ge-np have been specifically investigated. The samples were deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively on Si substrates. As-prepared thin film samples have been exposed to an ex-situ RTA at 600 °C for 60 s under forming gas atmosphere. Structural characterizations have been performed by X-ray Diffraction (XRD), Raman scattering, Secondary Ion Mass Spectroscopy (SIMS), and Scanning Electron Microscopy (SEM) techniques. It has been realized that reactive or nonreactive growth of ZnO layers significantly influences the morphology of the ZnO: Ge samples, most prominently the crystal structure of Ge-np. XRD and Raman analysis have revealed that while reactive growth results in a mixture of diamond cubic (DC) and simple tetragonal (ST12) Ge-np, nonreactive growth leads to the formation of only DC Ge-np upon RTA process. Formation of ST12 Ge-np has been discussed based on structural differences due to reactive and nonreactive growth of ZnO embedding layer. 相似文献
GENIUS-TF (Nucl. Instr. and Meth. A 511 (2003) 341; Nucl. Instr. and Meth. A 481 (2002) 149.) is a test-facility for the GENIUS project (GENIUS-Proposal, 20 November 1997; Z. Phys. A 359 (1997) 351; CERN Courier, November 1997, 16; J. Phys. G 24 (1998) 483; Z. Phys. A 359 (1997) 361; in: H.V. Klapdor-Kleingrothaus, H. Pas. (Eds.), First International Conference on Particle Physics Beyond the Standard Model, Castle Ringberg, Germany, 8–14 June 1997, IOP Bristol (1998) 485 and in Int. J. Mod. Phys. A 13 (1998) 3953; in: H.V. Klapdor-Kleingrothaus, I.V. Krivosheina (Eds.), Proceedings of the Second International Conference on Particle Physics Beyond the Standard Model BEYOND’ 99, Castle Ringberg, Germany 6–12 June 1999, IOP Bristol (2000) 915), a proposed large scale underground observatory for rare events which is based on operation of naked germanium detectors in liquid nitrogen for an extreme background reduction. Operation of naked Ge crystals in liquid nitrogen has been applied routinely already for more than 20 years by the CANBERRA Company for technical functions tests (CANBERRA Company, private communication, 5 March 2004.), but it never had found entrance into basic research. Only in 1997 first tests of application of this method for nuclear spectroscopy have been performed, successfully, in Heidelberg (Klapdor-Kleingrothaus et al., 1997, 1998; J. Hellmig and H.V. Klapdor-Kleingrothaus, 1997).
On May 5, 2003 the first four naked high-purity germanium detectors (total mass 10.52 kg) were installed in liquid nitrogen in the GENIUS Test Facility at the Gran Sasso underground laboratory. Since then the experiment has been running continuously, testing for the first time the novel technique in an underground laboratory and for a long-lasting period.
In this work, we present the first analysis of the GENIUS-TF background after the completion of the external shielding, which took place in December 2003. We focus especially on the background coming from 222Rn daughters. This is found to be at present by a factor of 200 higher than expected from simulation. It is still compatible with the scientific goal of GENIUS-TF, namely to search for cold dark matter by the modulation signal, but on the present level would cause serious problems for a full GENIUS—like experiment using liquid nitrogen. 相似文献
We discuss the performance, of a normal metal hot electron bolometer (NHEB) that we have measured at 0.3 K. We found that the noise equivalent power was limited by the amplifier noise. To improve the NHEB power response and to make it more robust and reliable we propose to substitute the normal metal with heavily doped silicon. The heavily doped silicon behaves like a metal with lower carrier concentration and has a smaller electron–phonon thermal coupling. We have fabricated superconductor-doped silicon-superconductor contacts (S-Sm-S) and we have used them as thermometers and coolers. 相似文献
Epitaxial CdTe layers were grown using organometallic vapor phase epitaxy on Si substrates with a Ge buffer layer. Ge layer
was grown in the same reactor using germane gas and the reaction of germane gas with the native Si surface is studied in detail
at low temperature. It is shown that germane gas can be used to “clean” the Si surface oxide prior to CdTe growth by first
reducing the thin native oxide that may be present on Si. When Ge layer was grown on Si using germane gas, an induction period
was observed before the continuous layer of Ge growth starts. This induction period is a function of the thickness of the
native oxide present on Si and possible reasons for this behavior are outlined. Secondary ion mass spectrometry (SIMS) data
show negligible outdiffusion and cross contamination of Ge in CdTe. 相似文献
In-situ doped polycrystalline SixGe1-x(x = 0.7) alloys were deposited by rapid thermal chemical vapor deposition (RTCVD) using the reactive gases SiH2Cl2, GeH4 and B2H6 in a H2 carrier gas. The depositions were performed at a total pressure of 4.0 Torr and at temperatures 600° C, 650° C and 700° C
and different B2H6 flow rates. The conditions were chosen to achieve high doping levels in the deposited films. Our results indicate negligible
effect of B2H6 flow on the deposition rate. The depositions follow an Arrhenius type behavior with an activation energy of 25 kcal/mole.
Boron incorporation in the films was found to follow a simple kinetic model with higher boron levels at lower deposition rates
and higher B2H6 flow rates. As-deposited resistivities as low as 2 mΩ-cm were obtained. Rapid thermal annealing (RTA) in the temperature
range 800-1000° C was found to reduce the resistivity only marginally due to the high levels of boron activation achieved
during the deposition process. The results indicate that polycrystalline SixGe1-x films can be deposited by RTCVD with resistivities comparable to those reported for in-situ doped polysilicon. 相似文献
We report the results of studies which have been made on heteroepitaxial layers of GaAs and AlGaAs grown by metalorganic chemical
vapor deposition on composite substrates that consist of four different types of heteroepitaxial layered structures of Ge
and Ge-Si grown by molecular beam epitaxy on (100)-oriented Si substrates. It is found that of the four structures studied,
the preferred composite substrate is a single layer of Ge ∼1 μm thick grown directly on a Si buffer layer. The double-crystal
X-ray rocking curves of 2 μm thick GaAs films grown on such substrates have FWHM values as small as 168 arc sec. Transmission
electron micrographs of these Ge/Si composite substrates has shown that the number of dislocations in the Ge heteroepitaxial
layer can be greatly reduced by an anneal at about 750° C for 30 min which is simultaneously carried out during the growth
of the GaAs layer. The quality of the GaAs layers grown on these composite substrates can be greatly improved by the use of
a five-period GaAs-GaAsP strained-layer superlattice (SLS). Using the results of these studies, low-threshold optically pumped
AlGaAs-GaAs DH laser structures have been grown by MOCVD on MBE Ge/Si composite substrates. 相似文献
The ALCHEMI method for locating the sites of foreign atoms within crystals is known to be sensitive to the delocalized emission of X-rays. This can result in large errors in some cases through differences in delocalization for different excitations or by error amplification in the ratio method of analysis. An alternative approach to the analysis of ALCHEMI data, using multivariate statistical analysis, is extended to the case of multiple impurities. Initial results from zone-axis channelling experiments for a Yb-doped zirconolite (CaZrTi2O7) are shown to confirm the improved accuracy of this method, especially for axial orientations. Data were collected using a 400-keV analytical electron microscope fitted with an intrinsic Ge X-ray detector. The potential advantages for ALCHEMI analysis of Ge detectors are considered. 相似文献