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1.
《Displays》2015
Modern liquid crystal displays (LCDs) require novel technologies, such as new alignment methods to eliminate alignment layers, fast response and long operation time. To this end, we report an overview of recent efforts in LCD technologies devoted to realize more display modes having no alignment layer, faster switching time and low battery consumption. In particular, we overview recent advances on the liquid crystals (LCs) alignment for display applications, which includes superfine nanostructures, polymeric microchannels and polymer stabilized LCs. Furthermore, we analyze the main optical and electro-optical properties of new generation LCDs displays addressing a particular attention to LCs blue phase hosting gold nanoparticles. Moreover, we focus on the progress of electrofluidic displays, which demonstrates characteristics that are similar to LCDs, with attention on various pixel designs, operation principles and possible future trends of the technology. 相似文献
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为了保证上海光源X射线干涉光刻光束线的稳定性,减小热变形对实验结果的影响,对X射线干涉光刻光束线的3个关键光学元件——偏转镜、聚焦镜和精密四刀狭缝进行热-结构耦合分析。首先,计算偏转镜、聚焦镜和精密四刀狭缝所承载的功率密度;然后,建立其有限元模型;最后,获得光学元件的温度场和热变形的结果。结果表明,偏转镜和聚焦镜采用间接水冷方式可有效抑制热变形,冷却后的最大面形误差分别为7.2μrad和9.2μrad。精密四刀狭缝未冷却时,刀片组件温度介于271.56~273.27℃,刀口热变形为0.19 mm,直线导轨热变形为0.08 mm;经过铜辫子冷却后,刀片组件温度降至22.24~23.94℃,刀口热变形降至0.2μm,直线导轨热变形降至0.1μm;采用影像法和接触探头法测试后,刀口直线度、平行度和重复精度均满足技术要求。偏转镜、聚焦镜和精密四刀狭缝的热变形通过间接水冷和铜辫子的冷却方式可以得到很大程度的抑制,进而保证光斑质量。 相似文献
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In this paper, we describe a method for increasing the external efficiency of polymer light‐emitting diodes (LEDs) by coupling out waveguided light with Bragg gratings. We numerically model the waveguide modes in a typical LED structure and demonstrate how optimizing layer thicknesses and reducing waveguide absorption can enhance the grating outcoupling. The gratings were created by a soft‐lithography technique that minimizes changes to the conventional LED structure. Using one‐dimensional and two‐dimensional gratings, we were able to increase the forward‐directed emission by 47 % and 70 %, respectively, and the external quantum efficiency by 15 % and 25 %. 相似文献
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Nanocrystalline Gd2O3:A (A=Eu3+, Dy3+, Sm3+, Er3+) phosphor films and their patterning were fabricated by a Pechini sol–gel process combined with a soft lithography. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and optical microscopy, UV/vis transmission and photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 500 °C and that the crystallinity increased with the elevation of annealing temperatures. Uniform and crack free non-patterned phosphor films were obtained by optimizing the composition of the coating sol, which mainly consisted of grains with an average size of 70 nm and a thickness of 550 nm. Using micro-molding in capillaries technique, we obtained homogeneous and defects-free patterned gel and crystalline phosphor films with different stripe widths (5, 10, 20 and 50 μm). Significant shrinkage (50%) was observed in the patterned films during the heat treatment process. The doped rare earth ions (A) showed their characteristic emission in crystalline Gd2O3 phosphor films due to an efficient energy transfer from Gd2O3 host to them. Both the lifetimes and PL intensity of the rare earth ions increased with increasing the annealing temperature from 500 to 900 °C, and the optimum concentrations for Eu3+, Dy3+, Sm3+, Er3+ were determined to be 5, 0.25, 1 and 1.5 mol% of Gd3+ in Gd2O3 films, respectively. 相似文献
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Ⅰ线光致抗蚀剂可以同时实用电子束和光学系统曝光,在50kV加速电压下,其曝光剂量为50-100μC/cm^2,曝光后在0.7%NaOH溶液内显影1分钟。其灵敏度比PMMA快5倍,分辩率为0.5μm。采用两方法制备CaAsPHEMT:一种用Ⅰ线光致抗蚀剂,对源、漏及栅全部都采用电子束曝光,制备了0.5μm栅长的GaAs PHEMT;另一种将源、漏及栅分割成两部分,其中精细部分由电子束曝光,其余部分由光学系统曝光,用这种方法制备了0.25μm栅长的GaAs PHEMT。Ⅰ 相似文献
9.
Higher resolution can be achieved in lithography by decreasing the wavelength of the exposure source. However, resist material
and their processing are also important when we move to a shorter wavelength lithography technology. This paper reviews the
recent development and challenges of deep-UV photoresists and their processing technology. 相似文献
10.
光刻胶灰化工艺与深亚微米线条的制作 总被引:5,自引:1,他引:4
随着器件尺寸的缩小,细线条的制作成为很关键的工艺,普通光学光刻已接近其分辨率的极限,而电子束光刻和X射线光刻技术复杂、费用昂贵。本文对光刻胶灰化工艺进行了分析和研究,并应用此工艺进行了深亚微米线条的制作,在普通光学光刻机上制作出宽度小于0.25μm细线条。我们已将此工艺成功地应用在深亚微米MOSFET的制作中。 相似文献