Modulating the Surface State of SiC to Control Carrier Transport in Graphene/SiC

Silicon carbide (SiC) with epitaxial graphene (EG/SiC) shows a great potential in the applications of electronic and photoelectric devices. The performance of devices is primarily dependent on the interfacial heterojunction between graphene and SiC. Here, the band structure of the EG/SiC heterojunction is experimentally investigated by Kelvin probe force microscopy. The dependence of the barrier height at the EG/SiC heterojunction to the initial surface state of SiC is revealed. Both the barrier height and band bending tendency of the heterojunction can be modulated by controlling the surface state of SiC, leading to the tuned carrier transport behavior at the EG/SiC interface. The barrier height at the EG/SiC(000‐1) interface is almost ten times that of the EG/SiC(0001) interface. As a result, the amount of carrier transport at the EG/SiC(000‐1) interface is about ten times that of the EG/SiC(0001) interface. These results offer insights into the carrier transport behavior at the EG/SiC heterojunction by controlling the initial surface state of SiC, and this strategy can be extended in all devices with graphene as the top layer.     

Interface engineering in chalcopyrite thin film solar devices

Successful interface engineering requires compositional and electronic material characterization as a prerequisite for understanding and intentionally generating interfaces in photovoltaic devices. The paper gives an overview with several examples, all referring to Cu(In,Ga)(S,Se)₂ (“CIGSSe”)-based solar cells, with an emphasis on characterization using highly specialized methods, such as elastic recoil detection analysis, X-ray emission spectroscopy and photoelectron spectroscopy using synchrotron and ultraviolet light for excitation, inverse photoemission spectroscopy and Kelvin probe force microscopy. First, the determination of the depth profile of the band gap energy E_g in the absorber layer is demonstrated. The modification of E_g towards both interfaces is discussed in terms of beneficial electronic effects. Next, the interface between absorber and buffer layers with alternative and promising non-toxic materials is considered. Between CIGSSe and a ZnSe buffer deposited by the metalorganic chemical vapor deposition (MOCVD) method a buried ZnS interface was found. For a Zn(O,OH) buffer processed with an ion layer gas reaction (ILGAR) the correlation of surface composition, valence band maximum and efficiency of the resulting solar cell is shown. In addition, another approach is considered where a ZnMgO window layer is sputtered directly on the absorber omitting any buffer layer. The determination of the potential distribution at the ZnMgO/CIGSSe interface supports the understanding of this new and simpler way to get good cell performances even without any buffer. Finally, monolithically integrated solar modules without encapsulation were investigated before and after accelerated aging tests and changes at the interconnects were identified.     

Work function difference of naphthyl end-capped oligothiophene in different crystal alignments studied by Kelvin probe force microscopy

The performance of organic semiconductor devices is strongly affected by the interface energetics at the junctions between the constituent materials. A large group of organic semiconductors consists of rodlike small molecules that crystallize upon deposition with a molecular orientation dependent on the specifics of the molecule–molecule and molecule–substrate interactions. By means of Kelvin probe force microscopy (KPFM), this work studies naphthyl end-capped oligothiophene, 5,50-bis(naphth-2-yl)-2,20-bithiophene (NaT2), deposited on samples of pristine ${\text{SiO}}_2$ and samples of graphene-covered ${\text{SiO}}_2$. The crystal molecular orientation of NaT2 is dependent on the substrate on which it is deposited. On ${\text{SiO}}_2$, the NaT2 molecules are predominately upright standing, forming crystallites with distinct terrace heights of $2.0\pm 0.1\text{nm}$. Measurements indicate formation of an initial wetting layer in the NaT2-${\text{SiO}}_2$ system for the upright standing molecules. When deposited on graphene, the molecules additionally form fibrous structures with heights of $10-115\text{nm}$ consisting of molecules lying down (face-on orientation). Using KPFM, a difference in the local contact potential difference (CPD) of upright standing NaT2 and face-on oriented structures on graphene is measured to be $-0.16\pm 0.04\text{V}$, indicating a work function difference between the two system configurations, which is confirmed through Density Functional Theory calculations.     

Revisiting the Hetero-Interface of Electrolyte/2D Materials in an Electric Double Layer Device (Small 43/2023)

Electric double layer (EDL) devices based on 2D materials have made great achievements for versatile electronic and opto-electronic applications; however, the ion dynamics and electric field distribution of the EDL at the electrolyte/2D material interface and their influence on the physical properties of 2D materials have not been clearly clarified. In this work, by using Kelvin probe force microscope and steady/transient optical techniques, the character of the EDL and its influence on the optical properties of monolayer transition metal dichalcogenides (TMDs) are probed. The potential drop, unscreened EDL potential distribution, and accumulated carriers at the electrolyte/TMD interface are revealed, which can be explained by nonlinear Thomas–Fermi theory. By monitoring the potential distribution along the channel, the evolution of the electric field-induced lateral junction in the TMD EDL transistor is accessed, giving rise to the better exploration of EDL device physics. More importantly, EDL gate-dependent carrier recombination and exciton–exciton annihilation in monolayer TMDs on lithium-ion solid state electrolyte (Li₂Al₂SiP₂TiO₁₃) are evaluated for the first time, benefiting from the understanding of the interaction between ions, carriers, and excitons. The work will deepen the understanding of the EDL for the exploitation of functional device applications.     

Effects of microstructure on electrochemical reactivity and conductivity in nanostructured ceria thin films

The proton conductivity in functional oxides is crucial in determining electrochemistry and transport phenomena in a number of applications such as catalytic devices and fuel cells. However, single characterization techniques are usually limited in detecting the ionic dynamics at the full range of environmental conditions. In this report, we probe and uncover the links between the microstructure of nanostructured ceria (NC) and parameters that govern its electrochemical reaction and proton transport, by coupling experimental data obtained with time‐resolved Kelvin probe force microscopy (tr‐KPFM), electrochemical impedance spectroscopy (EIS), and finite element analysis. It is found that surface morphology determines the water splitting rate and proton conductivity at 25°C and wet conditions, when protons are mainly generated and transported within surface physisorbed water layers. However, at higher temperature (i.e., ≥125°C) and dry conditions, when physisorbed water evaporates, grain size, and crystallographic orientation become significant factors. Specifically, the proton generation rate is negatively correlated with the grain size, whereas proton diffusivity is facilitated by surface {111} planes and additional conduction pathways offered by cracks and open pores connected to the surface.     

Comparisons of the topographic characteristics and electrical charge distributions among Babesia‐infected erythrocytes and extraerythrocytic merozoites using AFM

Tick‐borne Babesia parasites are responsible for costly diseases worldwide. Improved control and prevention tools are urgently needed, but development of such tools is limited by numerous gaps in knowledge of the parasite–host relationships. We hereby used atomic force microscopy (AFM) and frequency‐modulated Kelvin probe potential microscopy (FM‐KPFM) techniques to compare size, texture, roughness and surface potential of normal and infected Babesia bovis, B. bigemina and B. caballi erythrocytes to better understand the physical properties of these parasites. In addition, AFM and FM‐KPFM allowed a detailed view of extraerythrocytic merozoites revealing shape, topography and surface potential of paired and single parasites. B. bovis‐infected erythrocytes display distinct surface texture and overall roughness compared to noninfected erythrocytes. Interestingly, B. caballi‐infected erythrocytes do not display the surface ridges typical in B. bovis parasites. Observations of extraerythrocytic B. bovis, B. bigemina and B. caballi merozoites using AFM revealed differences in size and shape between these three parasites. Finally, similar to what was previously observed for Plasmodium‐infected erythrocytes, FM‐KPFM images reveal an unequal electric charge distribution, with higher surface potential above the erythrocyte regions that are likely associated with Babesia parasites than over its remainder regions. In addition, the surface potential of paired extraerythrocytic B. bovis Mo7 merozoites revealed an asymmetric potential distribution. These observations may be important to better understand the unique cytoadhesive properties of B. bovis‐infected erythrocytes, and to speculate on the role of differences in the distribution of surface charges in the biology of the parasites.     

Charge carrier separation and enhanced PEC properties of BiVO4 based heterojunctions having ultrathin overlayers

The photoelectrochemical performance of a BiVO₄ photoanode is limited by its poor charge transport properties, despite other useful optical absorption properties. Modifying the surface charge transport properties by forming heterojunction of BiVO₄ with other metal oxides layers having ultralow thickness is a promising route, as it may facilitate charge separation/transport without affecting other properties of BiVO₄. In this study, the structural, optical and PEC properties of heterojunction of BiVO₄ having ultrathin overlayers of Fe₂O₃, MoO₃ and ZnO has been investigated. The electrochemical impedance (via electrochemical impedance spectra in PEC cell) and surface photovoltage (using KPFM) measurements indicates improved charge transport owing to staggered band alignment and favourable band bending in case of BiVO₄/MoO₃ heterojunction as compared to pristine BiVO₄, BiVO₄/Fe₂O₃ and BiVO₄/ZnO heterojunctions. Enhanced photocurrent density in BiVO₄/MoO₃ of ~0.22 mA/cm² at 1.23 V_RHE which is 6 times as compared to pristine BiVO₄ layers has been observed. The results of the present study show that by forming heterojunction with a suitable semiconductor material can be used to enhance the PEC response by modifying the surface charge transfer characteristics and there is a large possibility of using other semiconductor materials for further investigations and improvement.     

In-situ prepared WSe2/Si 2D-3D vertical heterojunction for high performance self-driven photodetector

Two-dimensional (2D) transition metal chalcogenides (TMDs) have shown tremendous feasibility as building blocks for the development of high-performance optoelectronic devices owing to their distinct electrical and optical properties. However, the relatively narrow sensing range as well as the complex fabrication technique impede their technological applications. Here, we demonstrate the mixed-dimensional van der Waals (vdW) WSe₂/Si 2D-3D vertical heterojunction by in-situ fabrication of WSe₂ multilayer on pre-patterned Si, for broadband and fast-speed photodetection. Thanks to the novel high-quality vertical p-n heterojunction, the as-fabricated WSe₂/Si photodetector shows an excellent rectifying characteristic and a prominent photovoltaic effect, making the device capable of light detection in self-driven mode. Additionally, the device reveals remarkable performance in terms of a high specific detectivity of ～8.79 × 10¹³ Jones, a large responsivity of ～294 mA/W, and a fast response time of 4.1 μs. Significantly, the device shows high sensitivity to a wide spectra (200–1550 nm) owing to the production of a type-II band structure of the WSe₂/Si vertical heterojunction. The mechanism of photo-generated carriers separation and transfer in the heterojunction is analyzed by KPFM. Our work offers a potential route to the development of unique 2D-3D heterojunction for optoelectronic devices and system applications.