Estimation of gradient size of interfacial strain and its optimization for effective magnetoelectric coupling in (CoFe2O4) – (0.93Na0.5Bi0.5TiO3 – 0.07BaTiO3), 2-2 nano-composites

Strain-mediated coupling between the magnetic and electrically ordered phases plays a significant role in magnetoelectric (ME) nano-composites. This study explores a method to analyse and quantify interfacial strain using a grazing angle scan (α) in a ME composite optimised for a specific microstructure. The details of strain around the interface CoFe₂O₄ (CFO) – 0.93Na_0.5Bi_0.5TiO₃ – 0.07BaTiO₃ (NBT-BT) was determined by performing ‘α’ scan, in order to gather information at various depths of the NBT-BT layer around maximum intensity (110) reflection. The strain around the interface was observed to dominate over a spatial region of ～20–30 nm away from the interface. The Piezoresponse force microscopy (PFM) studies performed near the interface reveal that the strain constrain experienced by the ferroelectric layer operates such that polarisation rotation and domain wall motion are constrained compared to the strain relaxed region of the film. For effective strain transfer, heterostructures grown with optimised thicknesses (～20–30 nm) exhibited a superior inverse piezomagnetic effect.     

Resistance reduction effect of potassium bismuth titanate doping in yttrium–manganese co-doped medium Curie temperature barium titanate lead free ceramics through improved synthesis process

Through improved synthesis process, resistance reduction effect of (K_0.5Bi_0.5)TiO₃ (KBT) doping in Y–Mn co-doped BaTiO₃ (BT) lead free ceramics was investigated. By different doping methods (doping K₂O, Bi₂O₃ and TiO₂ or synthesized KBT), medium Curie temperature (around 130 °C) lead free BT ceramics were obtained with ultra-low resistivity (13.84 Ωcm) with a temperature maintaining process at 700 °C. In this contribution, effect of sintering process and doping methods is discussed in detail.     

Influence of domain switching process on the electrical fatigue behavior of ferroelectrics

We report an experimental approach, designed based on the recent findings that domain switching in ferroelectric ceramics can be separated into three regimes during antiparallel electric field loading, to investigate the influence of domain switching process on the electrical fatigue behavior of ferroelectrics. Uniaxial compressive stress (−2 MPã -100 MPa) and thermal loading (20 °C–150 °C) were used to tune the domain switching process. Under the same loading condition, the bipolar electrical fatigue behavior of soft lead zirconate titanate ceramics was systematically characterized. The amplitude and frequency of the applied electric field are 2 kV/mm and 10 Hz, respectively. By analyzing the evolution of the domain switching process, combined with the measured polarization and strain response, as well as the cracks observed on the surface of the specimen, it is found that the fatigue of ferroelectric ceramics was mainly related to the domain switching process near the coercive electric field: the regime 2 defined in this paper. The underlying mechanism was further discussed by considering the interplay between the domain switching process with the main factors affecting the electrical fatigue of ferroelectrics, namely defect redistribution, charge carrier injection, and crack initiation.     

Key-dependent side-channel cube attack on CRAFT

CRAFT is a tweakable block cipher introduced in 2019 that aims to provide strong protection against differential fault analysis. In this paper, we show that CRAFT is vulnerable to side-channel cube attacks. We apply side-channel cube attacks to CRAFT with the Hamming weight leakage assumption. We found that the first half of the secret key can be recovered from the Hamming weight leakage after the first round. Next, using the recovered key bits, we continue our attack to recover the second half of the secret key. We show that the set of equations that are solvable varies depending on the value of the key bits. Our result shows that 99.90% of the key space can be fully recovered within a practical time.     

Effects of anion and cation doping on the thermoelectric properties of n-type PbS

The PbCl_xS_1-x and Pb_1-xBi_xS (x? =?0–0.05) bulks were fabricated with a facile method of hydrothermal synthesis and microwave sintering, and the effect of anionic and cationic donors on the thermoelectric performance of PbS was investigated. Although Cl^? and Bi³⁺ both effectively improved the thermoelectric properties of n-type PbS, more excellent thermoelectric performance was obtained from Cl^? doped samples because of higher electrical property and lower thermal conductivity at higher temperature (T? >?600?K). The thermoelectric figure of merit (ZT) reaches 1.04 for PbCl_0.015S_0.985 at 800?K and increases with temperature increasing without sign of saturation, which is probably the highest value ever reported for single-phase polycrystalline n-type PbS. The results also indicate that the hydrothermal synthesis and microwave sintering can realize anion doping as well as cation doping for n-type PbS at low cost, and PbS should be a robust alternative for PbTe thermoelectric materials.     

影响煤层气开发效果的地质因素再认识

地质特征认识对煤层气开发效果起着重要作用。在资源特征相差不大的情况下,发现煤层气相邻井的产量差异仍较大。排除工程因素后,通过选取8类地质参数,细致比对了保德区块低产井与邻井的参数特征,筛查出其关键因素为煤层微幅构造与顶板封盖条件,其中以微幅构造为主。据此,重新认识并划分出区块新的次生褶皱背斜单元、向斜单元和斜坡单元,获得了不同次生褶皱构造单元的开发特征。结果表明,高、低产井分布与次生褶皱背斜、向斜相关性高达92%。其中:高产井主要分布在次生褶皱背斜变化较缓、呈隆起状的“平台”,且煤层顶板以泥岩、碳质泥岩为主,封盖性较好;低产井主要分布在次生褶皱向斜,同一井台各井开发效果差异表现为从向斜条带轴部—向斜条带内—向斜条带外的煤层气井平均单井产量不断增加,到向斜轴部的距离大于向斜曲率半径73.5%的范围为主力产气区,小于向斜曲率半径40.0%范围为产水主力区。这对煤层气新井部署、生产管理、开发调整等,具有一定的指导意义。     

实验室的质量监督(上)

质量监督是实验室保持人员能力,进行自我完善,日常渐进的重要手段,是持续改进的重要组成部分,也是实验室管理工作的难点,本文给出质量监督的目的、对象、方法、记录等.     

Controlled elements for designing ciphers suitable to efficient VLSI implementation

This work considers the problem of increasing the performance of the ciphers based on Data-Dependent (DD) operations (DDO) for VLSI implementations. New minimum size primitives are proposed to design DDOs. Using advanced DDOs instead of DD permutations (DDP) in the DDP-based iterative ciphers Cobra-H64 and Cobra-H128 the number of rounds has been significantly reduced yielding enhancement of the “performance per cost” value and retaining security at the level of indistinguishability from a random transformation. To obtain further enhancement of this parameter a new crypto-scheme based on the advanced DDOs is proposed. The FPGA implementation of the proposed crypto-scheme achieves higher throughput value and minimizes the allocated resources than the conventional designs. Design of the DDO boxes of different orders is considered and their ASIC implementation is estimated.     

On the Feasibility of Growing Pb[(Zn1/3Nb2/3)0.91Ti0.09]O3 Single Crystals

Pb[(Zn_1/3Nb_2/3)_0.91Ti_0.09]O₃ (PZNT91/9) single crystals were grown by two methods: from solution using PbO as a self‐fluxing agent (SC method) and directly from the melt without fluxing (MC method). In both growth methods, an allomeric Pb[(Mg_1/3‐Nb_2/3)_0.69Ti_0.31]O₃ (PMNT69/31) single crystal was used as a seed. X‐ray diffraction patterns of ground crystals showed that phase‐pure perovskite PZNT91/9 single crystals were successfully fabricated by the above two methods. The composition of the crystals obtained by both the SC and MC methods was analyzed using X‐ray fluorescence, which confirmed that the crystal composition is close to the nominal value, although volatilization of PbO and segregation during crystal growth are inevitable. The MC PZNT91/9 crystals exhibit excellent piezoelectric properties, with the piezoelectric constant, d₃₃, in the range of 1800–2200 pC N^–1. This value is comparable to that of the SC crystals. However, the MC crystals show an abnormal dielectric behavior. In contrast with the SC crystals, in the MC crystals a much broader dielectric peak appears in the dielectric response curves, accompanied by a much lower peak temperature of around 105 °C. Furthermore, frequency dispersion is apparent over a much wider temperature range (even more apparent than in pure relaxors), where a large, i.e., about 70 °C, full width at half maximum (FWHM) for the dielectric peaks is observed in the dielectric response. It is speculated that such an unusual phenomenon correlates with defects, microinhomogeneities, and polar regions in the as‐grown MC crystals. The origins of this abnormality have not been interpreted in detail until now. However, optical observation of the domain structure confirms that both the SC and MC crystals possess complex structural states.