基于盖革APD阵列的单通道激光雷达信号读出电路设计

随着测量技术的发展,激光雷达技术成为研究的热点,选取工作在盖革模式下的集成APD阵列雪崩二极管作为激光雷达的光电探测器,在探测距离为100-200m范围内,选择上升沿为5ns的激光脉冲,则接收带宽在70MHz~88MHz范围内,在此范围内APD探测器将接收到的回波信号转化为电信号,用TIA跨阻放大器反向放大模式将电流信号转化为电压信号,并将信号有效放大,输入至时刻鉴别电路,时刻鉴别电路用电压比较器来实现,最终可输出COMS逻辑电平信号;用TINA仿真软件进行仿真,仿真结果表明在接收带宽范围内TIA放大器的增益动态范围达到了54dB,总体电路延迟约为10ns。     

光电积累检测原理和发现概率及虚警概率的测试方法

本文从理论上分别研究噪声和信号加噪声通过选频电路的统计特性,根据两者的差别,提出了抑制噪声的抗干扰电路。叙述积累检测原理及检测电路,并从理论上分析积累检测对检测性能的贡献,进而介绍光电检测中发现概率和虚警概率的测试方法。     

Emerging applications of MXenes for photodetection: Recent advances and future challenges

The development and applications of transition metal carbides, nitrides and carbonitrides, commonly denoted as MXenes, have during the last few years rapidly expanded in various technological fields owing to their unique and controllable properties. These materials exhibit competing performance comparing with traditional materials and have created numerous opportunities for technology markets. Taking the advantage of excellent optoelectronic features, MXenes have been utilized for the construction of photodetectors with various structures and unique functionalities. While the application of MXenes in this area can be traced back to 2016, we have during the recent three years witnessed a dramatic development of MXene-based photodetectors, calling for a timely review to guideline their future direction. In this work, synthetic strategies of pristine MXenes are briefly introduced and their properties are discussed focusing on the optoelectronic aspects that are fundamental for the photoelectric conversion. Recent advances of MXene-based photodetectors are comprehensively summarized based on different types of MXenes and innovative designs of device construction. Finally, we provide perspectives for future challenges and opportunities of MXene-based photodetectors, which may enlighten their further development.     

基于光电触发的瞬态电弧测量及分析

本文搭建了单相金属熔焊电孤发生电路.瞬态电弧持续时间短,电参数难以采集.根据电弧的光学特性,设计了基于光敏二极管的示波器外部触发电路,经过试验,满足要求.金属丝熔焊电弧试验采用了3种不同材料,通过示波器记录电压电流波形,分析了材料的差异对瞬态电弧的影响.     

高精度动态测径仪设计中的关键问题

本文介绍了检测高速线材直径及轮廓的动态测径仪,及为了达到高的检测精度,在设计中需要考虑的一些关键问题。     

扩展目标边缘数据空间排序算法

提出的边缘数据排序算法，用于扩展目标跟踪设计之中，此算法采用链式数据结构，在寻找搜索起始点的基础之上，以距离最近为相邻象元之准则在链式数据结构中进行搜索，并重新妆成边缘数据的空彰序集合。     

单片微机控制皮革表面粗糙度在线光电检测系统

皮革表面粗糙度的检测,对提高皮服装及其他皮件产品质量具有重要意义。本文提出一种实现皮革表面粗糙度在线光电检测的“相对比值法”,论述了“相对比值法”的检测原理,论述了应用MCS-51单片微机及光电检测部件组成皮革表面粗糙度在线检测系统的组成原理、设计思想及程序流程。     

In-situ prepared WSe2/Si 2D-3D vertical heterojunction for high performance self-driven photodetector

Two-dimensional (2D) transition metal chalcogenides (TMDs) have shown tremendous feasibility as building blocks for the development of high-performance optoelectronic devices owing to their distinct electrical and optical properties. However, the relatively narrow sensing range as well as the complex fabrication technique impede their technological applications. Here, we demonstrate the mixed-dimensional van der Waals (vdW) WSe₂/Si 2D-3D vertical heterojunction by in-situ fabrication of WSe₂ multilayer on pre-patterned Si, for broadband and fast-speed photodetection. Thanks to the novel high-quality vertical p-n heterojunction, the as-fabricated WSe₂/Si photodetector shows an excellent rectifying characteristic and a prominent photovoltaic effect, making the device capable of light detection in self-driven mode. Additionally, the device reveals remarkable performance in terms of a high specific detectivity of ～8.79 × 10¹³ Jones, a large responsivity of ～294 mA/W, and a fast response time of 4.1 μs. Significantly, the device shows high sensitivity to a wide spectra (200–1550 nm) owing to the production of a type-II band structure of the WSe₂/Si vertical heterojunction. The mechanism of photo-generated carriers separation and transfer in the heterojunction is analyzed by KPFM. Our work offers a potential route to the development of unique 2D-3D heterojunction for optoelectronic devices and system applications.     

Novel organic-perovskite hybrid structure forward photo field effect transistor

To enhance photosensitive performances for an organic thin film transistor, we fabricated a hybrid structured transistor with C8BTBT film as organic active layer, onto which, a CH₃NH₃PbI₃ layer was formed through the vacuum deposition. The phototransistor showed the best photo responsivity as high as 33 A/W, much higher than most other organic based thin film transistors, in addition to keeping fast response time and well gate tunable ability. The working mechanism were further investigated with the temperature dependence measurement. The organic-perovskite hybrid transistor may open up a path way for the optimization of organic photo sensitive transistors.     

一种新型的用于工程机械的激光扫平系统

文中介绍了一种用于工程机械中的激光扫平系统的结构和工作原理，分析了影响扫平精度的误差因素，并给出了实验结果。