前向反冲分析和非卢瑟福背散射

介绍了弹性散射分析中的另外两种分析方法——前向反冲分析和非卢瑟福背散射分析。前向反冲分析适用于材料中H和He同位素分析。高能质子和He离子背散射分析可提高对重基体中C,N和O等轻元素分析的灵敏度。给出了这两种分析方法的应用实例。     

Subsurface structures in initial stage of FeSi2 growth studied by high-resolution Rutherford backscattering spectroscopy

The initial stage of iron silicide formation is investigated by high-resolution Rutherford backscattering spectroscopy. During the Fe deposition on Si(001) at 470 °C, the formation of FeSi₂ is confirmed by the surface peak analysis. Initially, FeSi₂ grows epitaxially so that one of the major crystallographic axes is parallel to the <111> axis of the Si substrate. With increasing Fe deposition, the deviation between the major crystallographic axis of the silicide region and Si<111> increases although the electron diffraction pattern is independent of the amount of Fe deposition. Therefore, the subsurface crystallographic structure of iron silicide is transformed from a cubic-like to a low-symmetry structure.     

Thermal stability of interfaces between metals and InP-based materials

The thermal stability of interfaces between metals (Ni, Pt, Ti, Mo) and III-V compound semiconductors has been investigated by the application of Rutherford backscattering spectrometry. Metal diffusion and interfacial lattice disorder of the semiconductors were analyzed for various metal/semiconductor samples annealed at temperatures up to 500°C. The interfaces of Ni/GaAs and Ti/GaAs were found to be more stable than those of Ni/In-based semiconductors and Ti/ In-based semiconductors, respectively. Faster diffusion of Pt atoms was ob-served in In-and As-containing materials than in P-containing materials. Mo/ semiconductor interfaces were the most stable.     

Ion implantation doping of OMCVD grown GaN

Doping by ion implantation using Si, O, Mg, and Ca has been studied in single crystal semi-insulating and n-type GaN grown on a-sapphire substrates. The n-and p-type dopants used in this study are Si and O; Mg and Ca, respectively. Room temperature activation of Si and O donors has been achieved after 1150°C annealing for 120 s. The activation of Mg and Ca acceptors is too low to measure at both room temperature and 300°C. Using higher doses to achieve a measurable p-type conduction increases the amount of damage created by the implantation. Rutherford back scattering measurements on this material indicate that the damage is still present even after the maximum possible heat treatment. Secondary ion mass spectrometry measurements have indicated a redistribution in the measured profiles of Mg due to annealing.     

FAST MEASUREMENT OF ASH CONTENT IN COAL WASHING PLANT

The coal filter cake is a product of fine coal after floatation which has an ash content of 7-13%, water content of 30±2%, and a particle size of less than 1 mm. The ash content was measured by the intensity of the single backscattered gamma-ray, and its accuracy is mainly dependent on the energy of the gamma-ray. The 238Pu low energy photon source is selected in this work. The energy of its gamma-ray is 15 keV, which can result not only in the best sensitivity, but also in the lowest contribution to the environment radiation. The root mean square deviation of the ash measurement is±0.33% (±1σ).     

硫对注入YSZ单晶的金属铂在退火过程中结晶的影响

秀卢瑟福背散射－沟道技术（ＲＢＳ－Ｃ）和Ｘ射线衍射技术（ＸＲＤ）研究了Ｐｔ和注入ＹＳＺ（Ｙ２Ｏ３稳定的ＺｒＯ２）后产生的损伤和退火过程中损伤的恢复及注入Ｐｔ的晶化，ＲＢＳ－Ｃ分析表明ＹＳＺ室温下的存在较强自退火效应，ＸＲＤ分析结果示出硫以铂的晶化产生很大影响。     

Fe~(2+)注人Al_2O_3陶瓷及其退火改善材料表面电学性能的研究

对透明Al_2O_3陶瓷进行了Fe元素的离子注入。用“Van der Pauw”方法测定注入层的电阻率,并结合Hall效应测量,确定样品载流子浓度和迁移率。 本文主要阐述未经退火和退火的Fe~(2+)注入Al_2O_3陶瓷表面电性能,并应用Rutherford背散射技术等方法进行分析比较,试图得到有关晶格损伤及恢复、注入离子的纵向浓度分布,缺陷等信息。最后,简要地叙述了注入层的导电机制。     

The influence of an intermediate MoO3 layer on the solid state reaction of cobalt oxide withγ-Al2O3

In view of the importance for Co_xO_y,-MoO₃/-Al₂O₃ hydrodesulphurization (HDS) catalysts, the reactivity of cobalt oxide layers towards cobalt aluminate formation was investigated on both MoO₃-covered and bare -Al₂O₃ substrates. Co₃O₄/MoO₃/-Al₂O₃ and Co₃O₄/-Al₂O₃ systems were prepared by vapour-deposition of MoO₃ (12 × 10¹⁵ Mo atoms/cm²) and Co (400 × 10¹⁵ Co atoms/cm²) layers onto a -Al₂O₃ substrate, followed by oxidation of the Co layer to Co₃O₄. After annealing at 800°C for 40 h, the interfacial reaction to cobalt aluminate was assessed using Rutherford backscattering spectrometry. The presence of molybdenum oxide appeared to enhance cobalt aluminate formation. The Mo atoms, which spread out over the entire cobalt-containing layer, presumably caused a high defect density, which explains the observed higher reaction rate. The amount of MoO₃ was much too low to stabilize all cobalt atoms by cobalt molybdate formation.     

铒离子注入晶体硅的射程分布和离散研究

用400 keV能量的铒离子垂直注入晶体硅(Si)样品中。利用卢瑟福背散射技术研究了能量为400 keV、剂量为5×1015ions/cm2的铒离子注入Si晶体的平均投影射程、射程离散和深度分布。测出的实验值和TRIM 98得到的理论模拟值进行了比较,发现实验值跟TRIM 98模拟计算的理论值符合较好。     

Influences of temperature and Sn-addition on microstructural evolution of Ag during FSW

ABSTRACT

The microstructural evolutions of pure Ag and Ag-0.75 wt-%Sn during rapid cooling friction stir welding (FSW) were examined. At the lower welding temperature of FSW conditions, the annealing twinning was highly suppressed and the microstructural evolution was dominated by the discontinuous dynamic recrystallisation (DDRX) via the high angle boundary (HAB) bulging. The fully recrystallised microstructure was remarkably finer than that formed through the frequent annealing twinning at the higher welding temperature. Moreover, the Sn-addition caused the HAB bulging due to the inhibition of dynamic recovery and decreased mobility of grain boundaries. With decreasing the ratio of the peak temperature to the recrystallisation temperature, the dominant grain refinement mechanism is implied to change from the annealing twinning to the DDRX.