Method for Preparation of Semiconductor Quantum‐Rod Lasers in a Cylindrical Microcavity

An efficient method for preparation of semiconductor quantum rod films for robust lasing in a cylindrical microcavity is reported. A capillary tube, serving as the laser cavity, is filled with a solution of nanocrystals and irradiated with a series of intense nanosecond laser pulses to produce a nanocrystal film on the capillary surface. The films exhibit intense room‐temperature lasing in whispering‐gallery modes that develop at the film–capillary interface as corroborated from the spacing detected for the lasing modes. Good lasing stability is observed at moderate pump powers. The method was applied successfully to several quantum‐rod samples of various sizes.     

Towards implementation of a nickel silicide process for CMOS technologies

In this paper, we review some of the advantages and disadvantages of nickel silicide as a material for the electrical contacts to the source, drain and gate of current and future CMOS devices. We first present some of the limitations imposed on the current cobalt silicide process because of the constant scaling, of the introduction of new substrate geometries (i.e. thin silicon on insulator) and of the modifications to the substrate material (i.e. SiGe). We then discuss the advantages of NiSi and for each of the CoSi₂ limitations, we point out why Ni is believed to be superior from the point of view of material properties, miscibility of phases and formation mechanisms. Discussion follows on the expected limitations of NiSi and some of the possible solutions to palliate these limitations.     

Subsurface structures in initial stage of FeSi2 growth studied by high-resolution Rutherford backscattering spectroscopy

The initial stage of iron silicide formation is investigated by high-resolution Rutherford backscattering spectroscopy. During the Fe deposition on Si(001) at 470 °C, the formation of FeSi₂ is confirmed by the surface peak analysis. Initially, FeSi₂ grows epitaxially so that one of the major crystallographic axes is parallel to the <111> axis of the Si substrate. With increasing Fe deposition, the deviation between the major crystallographic axis of the silicide region and Si<111> increases although the electron diffraction pattern is independent of the amount of Fe deposition. Therefore, the subsurface crystallographic structure of iron silicide is transformed from a cubic-like to a low-symmetry structure.     

Thermally stimulated discharge current (TSDC) and dielectric constant of semiconducting glasses

In this paper the results of thermally stimulated discharge current (TSDC) and dielectric constant for 40PbO-60Bi₂O₃ glass thermoelectrets are presented. Measurements of TSDC and dielectric constant, ǵe, have been carried out in the temperature range 30–300°C. The thermoelectrets were prepared at different polarizing fields. The various observed peaks in the thermograms are discussed on the basis of space charge polarization. The trap energy is evaluated from the Garlick-Gibson plot of initial rise method. Similarly other parameters such as relaxation time, charge release etc are evaluated.     

Amorphous chromium silicide formation in hydrogenated amorphous silicon

The interaction between thin films of hydrogenated amorphous silicon and sputter-deposited chromium has been studied. Following deposition of the chromium films at room temperature, the films were annealed over a range of times and temperatures below 350°C. It was found that an amorphous silicide was formed only a few nanometers thick with the square of thickness proportional to the annealing time. The activation energy for the process was 0.55±0.05 eV. The formation process of the silicide was very reproducible with the value of density derived from the thickness and Cr surface density being close to the value for crystalline CrSi₂ for all films formed at temperatures ≤300°C. The specific resistivity of the amorphous CrSi₂ was ≈600 μΩ·cm and independent of annealing temperature.     

Formation of titanium and cobalt germanides on Si (100) using rapid thermal processing

Titanium and cobalt germanides have been formed on Si (100) substrates using rapid thermal processing. Germanium was deposited by rapid thermal chemical vapor deposition prior to metal evaporation. Solid phase reactions were then performed using rapid thermal annealing in either Ar or N₂ ambients. Germanide formation has been found to occur in a manner similar to the formation of corresponding silicides. The sheet resistance was found to be dependent on annealing ambient (Ar or N₂) for titanium germanide formation, but not for cobalt germanide formation. The resistivities of titanium and cobalt germanides were found to be 20 μΩ-cm and 35.3μΩ-cm, corresponding to TiGe₂ and Co₂Ge, respectively. During solid phase reactions of Ti with Ge, we have found that the Ti₆Ge₅ phase forms prior to TiGe₂. The TiGe₂ phase was found to form approximately at 800° C. Cobalt germanide formation was found to occur at relatively low temperatures (425° C); however, the stability of the material is poor at elevated temperatures.     

用离子束混合及快速热处理方法形成钽的硅化物

本文描述用离子束透过钽金属膜进行混合和快速热处理方法来形成钽的硅化物.用溅射方法在P型硅衬底上淀积一层金属钽,然后用砷离子束透过钽金属模进行混合,采用快速热处理后形成了平整的硅化钽薄层.使用厚度为500埃的钽金属膜,得到钽的硅化物薄层电阻为5.5Ω/□.研究了砷离子能量、剂量及钽膜厚度对钽的硅化物薄层电阻的影响.用透射电镜和台阶仪对所形成的硅化钽进行了分析和厚度测量.     

Characterization of CuInS2 thin films for solar cells prepared by spray pyrolysis

We have made a study of the chemical composition, the electrical, the optical and the structural properties of polycrystalline CuInS₂ thin films prepared by spray pyrolysis to be used for thin film solar cells. These films were deposited starting from aqueous solutions with different chemical compositions ([Cu]/[In] and [S]/[Cu] ratios) and at different substrate temperatures. In all cases, the material is p-type with grains preferentially oriented in the (112) direction of the sphalerite structure. The electro-optical properties show a very strong dependence on the [Cu]/[In] ratio in the solution. Films with copper excess have smaller resistivity and better crystallinity than those which are stoichiometric or have indium excess. The results obtained in this work show the possibility of having CuInS₂ thin films with a wide range of resistivity, a fact that could be important for making solar cells based on this material.     

单晶硅化物及其应用

本文评述了单晶CoSi_2和NiSi_2的结构特点、各种制备方法、器件应用和发展前景。采用分子束外延(MBE)和“内延”法(Mesotaxy)制备的单晶硅化物质量,电学性能和热稳定性较好。由于首次得到理想的突变的金属——半导体接触,使对金属——半导体接触的理论分析成为可能。硅/单晶硅化物/硅结构在实际应用中非常重要,如单晶硅化物作集电极埋层,能降低集电极串联电阻,克服重掺杂埋层的横扩和自掺杂问题,提高了电路工作速度,减小了器件面积。埋层硅化物也可作为微波传输线的地线,是实现高频集成电路互连的好方法。而采用该结构制备的高速器件——金属基区晶体管(MBT)和穿透基区晶体管(PBT),具有很好的应用前景。     

As离子注入形成硅化钨的研究

大规模集成电路的发展使集成度不断提高,器件尺寸减小,线条变窄。现常用的多晶硅栅和互连,由于电阻率高,限制了集成电路的速度。近年发展起来的硅化物材料,因其电阻率低、稳定性好、自对准性能好而常被用作大规模集成电路中的欧姆接触,互连和肖特基势垒。