全文获取类型
收费全文 | 30191篇 |
免费 | 2061篇 |
国内免费 | 2623篇 |
专业分类
电工技术 | 957篇 |
综合类 | 1595篇 |
化学工业 | 7067篇 |
金属工艺 | 4156篇 |
机械仪表 | 2178篇 |
建筑科学 | 321篇 |
矿业工程 | 228篇 |
能源动力 | 1273篇 |
轻工业 | 1764篇 |
水利工程 | 89篇 |
石油天然气 | 377篇 |
武器工业 | 183篇 |
无线电 | 4784篇 |
一般工业技术 | 7817篇 |
冶金工业 | 850篇 |
原子能技术 | 462篇 |
自动化技术 | 774篇 |
出版年
2024年 | 133篇 |
2023年 | 459篇 |
2022年 | 708篇 |
2021年 | 831篇 |
2020年 | 855篇 |
2019年 | 756篇 |
2018年 | 769篇 |
2017年 | 1005篇 |
2016年 | 950篇 |
2015年 | 867篇 |
2014年 | 1272篇 |
2013年 | 1567篇 |
2012年 | 1743篇 |
2011年 | 2300篇 |
2010年 | 1630篇 |
2009年 | 1842篇 |
2008年 | 1608篇 |
2007年 | 2101篇 |
2006年 | 1960篇 |
2005年 | 1601篇 |
2004年 | 1481篇 |
2003年 | 1230篇 |
2002年 | 1092篇 |
2001年 | 1034篇 |
2000年 | 894篇 |
1999年 | 743篇 |
1998年 | 644篇 |
1997年 | 528篇 |
1996年 | 454篇 |
1995年 | 401篇 |
1994年 | 364篇 |
1993年 | 292篇 |
1992年 | 212篇 |
1991年 | 148篇 |
1990年 | 97篇 |
1989年 | 101篇 |
1988年 | 58篇 |
1987年 | 35篇 |
1986年 | 20篇 |
1985年 | 13篇 |
1984年 | 15篇 |
1983年 | 8篇 |
1982年 | 10篇 |
1981年 | 8篇 |
1980年 | 5篇 |
1979年 | 7篇 |
1976年 | 3篇 |
1963年 | 3篇 |
1959年 | 6篇 |
1951年 | 2篇 |
排序方式: 共有10000条查询结果,搜索用时 796 毫秒
1.
Jincheng Yu Yabin Chang Ewa Jakubczyk Bing Wang Feridoon Azough Robert Dorey Robert Freer 《Journal of the European Ceramic Society》2021,41(9):4859-4869
Ca3Co4O9 is a promising p-type thermoelectric oxide material having intrinsically low thermal conductivity. With low cost and opportunities for automatic large scale production, thick film technologies offer considerable potential for a new generation of micro-sized thermoelectric coolers or generators. Here, based on the chemical composition optimized by traditional solid state reaction for bulk samples, we present a viable approach to modulating the electrical transport properties of screen-printed calcium cobaltite thick films through control of the microstructural evolution by optimized heat-treatment. XRD and TEM analysis confirmed the formation of high-quality calcium cobaltite grains. By creating 2.0 at% cobalt deficiency in Ca2.7Bi0.3Co4O9+δ, the pressureless sintered ceramics reached the highest power factor of 98.0 μWm?1 K-2 at 823 K, through enhancement of electrical conductivity by reduction of poorly conducting secondary phases. Subsequently, textured thick films of Ca2.7Bi0.3Co3.92O9+δ were efficiently tailored by controlling the sintering temperature and holding time. Optimized Ca2.7Bi0.3Co3.92O9+δ thick films sintered at 1203 K for 8 h exhibited the maximum power factor of 55.5 μWm?1 K-2 at 673 K through microstructure control. 相似文献
2.
F.T. Munna Vidhya Selvanathan K. Sobayel Ghulam Muhammad Nilofar Asim Nowshad Amin Kamaruzzaman Sopian Md. Akhtaruzzaman 《Ceramics International》2021,47(8):11003-11009
In this study, dilute chemical bath deposition technique has been used to deposit CdZnS thin films on soda-lime glass substrates. The structural, morphological, optoelectronic properties of as-grown films have been investigated as a function of different Zn2+ precursor concentrations. The X-ray diffractogram of CdS thin-film reveals a peak corresponding to (002) plane with wurtzite structure, and the peak shift has been observed with the increase of the Zn2+ concentration upon formation of CdZnS thin film. From morphological studies, it has been revealed that the diluted chemical bath deposition technique provides homogeneous distribution of film on the substrate even at a lower concentration of Zn2+. Optical characterization has shown that the transparency of the film is influenced by Zn2+ concentration and when the Zn2+ concentration is varied from 0 M to 0.0256 M, bandgap values of resulting films range from 2.42 eV to 3.90 eV while. Furthermore, electrical properties have shown that with increasing zinc concentration the resistivity of the film increases. Finally, numerical simulation validates and suggests that CdZnS buffer layer with composition of 0.0032 M Zn2+ concentration would be a promising candidate in CIGS solar cell. 相似文献
3.
《Ceramics International》2021,47(19):27217-27229
Herein, an in-depth analysis of the effect of heat treatment at temperatures between 900 and 1500 °C under an Ar atmosphere on the structure as well as strength of Cansas-II SiC fibres was presented. The untreated fibres are composed of β-SiC grains, free carbon layers, as well as a small amount of an amorphous SiCxOy phase. As the heat-treatment temperature was increased to 1400 °C, a significant growth of the β-SiC grains and free carbon layers occurred along with the decomposition of the SiCxOy phase. Moreover, owing to the decomposition of the SiCxOy phase, some nanopores formed on the fibre surface upon heating at 1500 °C. The mean strength of the Cansas-II fibres decreased progressively from 2.78 to 1.20 GPa with an increase in the heat-treatment temperature. The degradation of the fibre strength can be attributed to the growth of critical defects, β-SiC grains, as well as the residual tensile stress. 相似文献
4.
《Ceramics International》2022,48(20):29959-29966
High-purity SiC ceramic devices are applied in semiconductor industry owing to their outstanding properties. Nevertheless, it is difficult to densify SiC ceramics without any sintering additive even by HP sintering. In this work, high-purity and dense SiC ceramics were fabricated by HP sintering with very low amounts of sintering aids. Residual B content was only 556 ppm and relative density was more than 99.5%. Furthermore, thermal conductivity of as-prepared SiC ceramics was improved from 155 W m?1 K?1 to 167 W m?1 K?1 by increasing holding time and their plasma corrosion resistance was promoted in the meantime. The as-prepared high-purity SiC ceramics have broad application prospects in the field of semiconductor industry. 相似文献
5.
Qiqi Peng Xu Jiang Yifan Chen Wei Zhang Jun Jiang Anquan Jiang 《Ceramics International》2021,47(16):22753-22759
Large domain wall (DW) conductivity in an insulating ferroelectric plays an important role in the future nanosensors and nonvolatile memories. However, the wall current was usually too small to drive high-speed memory circuits and other agile nanodevices requiring high output-powers. Here, a large domain-wall current of 67.8 μA in a high on/off ratio of ~4460 was observed in an epitaxial Au/BiFeO3/SrRuO3 thin-film capacitor with the minimized oxygen vacancy concentration. The studies from read current-write voltage hysteresis loops and piezo-response force microscope images consistently showed remaining of partially unswitched domains after application of an opposite poling voltage that increased domain wall density and wall current greatly. A theoretical model was proposed to explain the large wall current. According to this model, the domain reversal occurs with the appearance of head-to-head and tail-to-tail 180° domain walls (DWs), resulting in the formation of highly conductive wall paths. As the applied voltage increased, the domain-wall number increased to enhance the on-state current, in agreement with the measurements of current-voltage curves. This work paves a way to modulate DW currents within epitaxial Au/BiFeO3/SrRuO3 thin-film capacitors through the optimization of both oxygen vacancy and domain wall densities to achieve large output powers of modern domain-wall nanodevices. 相似文献
6.
Jiangyou Long Qingfa Peng Gaopan Chen Yuliang Zhang Xiaozhu Xie Guoshun Pan Xiaofeng Wang 《Ceramics International》2021,47(16):23134-23143
Femtosecond (fs) lasers have been proved to be reliable tools for high-precision and high-quality micromachining of ceramic materials. Nevertheless, fs laser processing using a single-mode beam with a Gaussian intensity distribution is difficult to obtain large-area flat and uniform processed surfaces. In this study, we utilize a customized diffractive optical element (DOE) to redistribute the laser pulse energy from Gaussian to square-shaped Flat-Top profile to realize centimeter-scale low-damage micromachining on single-crystal 4H–SiC substrates. We systematically investigated the effects of processing parameters on the changes in surface morphology and composition, and an optimal processing strategy was provided. Mechanisms of the formation of surface nanoparticles and the removal of surface micro-burrs were discussed. We also examined the distribution of subsurface defects caused by fs laser processing by removing a thin surface layer with a certain depth through chemical mechanical polishing (CMP). Our results show that laser-induced periodic surface structures (LIPSSs) covered by fine SiO2 nanoparticles form on the fs laser-processed areas. Under optimal parameters, the redeposition of SiO2 nanoparticles can be minimized, and the surface roughness Sa of processed areas reaches 120 ± 8 nm after the removal of a 10 μm thick surface layer. After the laser processing, micro-burrs on original surfaces are effectively removed, and thus the average profile roughness Rz of 2 mm long surface profiles decreases from 920 ± 120 nm to 286 ± 90 nm. No visible micro-pits can be found after removing ~1 μm thick surface layer from the laser-processed substrates. 相似文献
7.
In this study, AA7075 aluminum matrix composites reinforced with the combination of SiC, Al2O3, and B4C particles were fabricated by the liquid metal infiltration method. The effects of the relative ratio of B4C and Al2O3 particles on the microstructural, wear, and corrosion features of the composite samples were analyzed using XRD, light metal microscopy, SEM, EDS, Brinell hardness, ball-on-disc type tribometer, and potentiodynamic polarization devices. It was determined that infiltration occurred more successfully, and homogenously distributed particles with reduced porosity were obtained as the amount of Al2O3 increased. Worn surface studies revealed that the specimens were predominantly worn by abrasion and adhesion. The increase in B4C/Al2O3 ratio caused a decrease in the hardness and wear strength, whereas it increased the corrosion resistance. 相似文献
8.
《Ceramics International》2022,48(14):20000-20009
Zinc oxide (ZnO) offers a major disadvantage of asymmetry doping in terms of reliability, stability, and reproducibility of p-type doping, which is the main hindrance in realization of optoelectronic devices. The problem is even more complicated due to formation of various native defects in unintentionally doped n-type ZnO. The realization of p-type conductivity in doped ZnO requires an in-depth understanding of the formation of an effective shallow acceptor, as well as donor-acceptor compensation. Photophysical properties such as photoconductivity along with photoluminescence (PL) studies have unprecedentedly and effectively been utilized in this work to monitor the evolution of various in-gap defects. Phosphorus (P) doped ZnO thin films have been grown by RF magnetron sputtering under various Ar to O2 gas ratios to investigate the effect of O2 on the donor-acceptor compensation by comprehensive photoconductivity measurements supported by the PL studies. Initial elemental analyses indicate presence of abundant zinc vacancies (VZn) in O-rich ambience. The results predict that P sits in the zinc (Zn) site rather than the oxygen (O) site causing the formation of PZn–2VZn acceptor-like defects, which compensates the donor defects in P doped ZnO films. Photocurrent spectra uniquely reveal presence of more oxygen vacancies (VO) defects states in lower O2 flow, which gets compensated with an increase in the O2 flow. Successive photocurrent transients indicate probable presence of more VO in the films grown with lower O2 flow and more VZn in higher O2 flow. Overall the photosensitivity measurements clearly present that O-rich ambience expedites the formation of acceptor defects which are compensated, thereby lowering the dark current and enhancing the ultraviolet photosensitivity. 相似文献
9.
《Ceramics International》2022,48(1):744-753
The heat-resistance of the Cansas-II SiC/CVI-SiC mini-composites with a PyC and BN interface was studied in detail. The interfacial shear strength of the SiC/PyC/SiC mini-composites decreased from 15 MPa to 3 MPa after the heat treatment at 1500 °C for 50 h, while that of the SiC/BN/SiC mini-composites decreased from 248 MPa to 1 MPa, which could be mainly attributed to the improvement of the crystallization degree of the interface and the decomposition of the matrix. Aside from the above reasons, the larger declined fraction of the interfacial shear strength of the SiC/BN/SiC mini-composites might also be related to the gaps in the BN interface induced by the volatilization of B2O3·SiO2 phase, leading to a significant larger declined fraction of the tensile strength of the SiC/BN/SiC mini-composites due to the obvious expansion of the critical flaws on the fiber surface. Therefore, compared with the CVI BN interface, the CVI PyC interface has better heat-resistance at high temperatures up to 1500 °C due to the fewer impurities in PyC. 相似文献
10.
三维异质异构集成技术是实现电子信息系统向着微型化、高效能、高整合、低功耗及低成本方向发展的最重要方法,也是决定信息化平台中微电子和微纳系统领域未来发展的一项核心高技术。文章详细介绍了毫米波频段三维异质异构集成技术的优势、近年来的发展趋势以及面临的挑战。利用硅基MEMS 光敏复合薄膜多层布线工艺可实现异质芯片的低损耗互连,同时三维集成高性能封装滤波器、高辐射效率封装天线等无源元件,还能很好地处理布线间的电磁兼容和芯片间的屏蔽问题。最后介绍了一款新型毫米波三维异质异构集成雷达及其在远距离生命体征探测方面的应用。 相似文献