热丝法低温生长硅上单晶碳化硅薄膜

提出了热丝化学气相淀积法，在低温（６００－７５０℃）下成功地生长出硅上单晶碳化硅薄膜，Ｘ光衍射谱、喇曼光谱证实了外延膜的单晶结构，光致发光测量证明外延ＳｉＣ材料室温下可稳定发射可见光。     

石油沥青薄膜烘箱试验法国家标准修订说明

石油沥青薄膜烘箱试验是重交通道路石油沥青和道路石油沥青的重要检测项目之一,此标准的修订,对促进国产沥青产品质量以及与国际标准接轨都具有重大意义,该文对《石油沥青薄膜烘箱试验法》修订目的和意义,修订依据,修订内容做了简要介绍。     

Non-destructive evaluation of carrier transport properties in CuInS2 and CuInSe2 thin films using photothermal deflection technique

Photothermal deflection technique (PTD) is a non-destructive tool for measuring the temperature distribution in and around a sample, due to various non-radiative decay processes occurring within the material. This tool was used to measure the carrier transport properties of CuInS₂ and CuInSe₂ thin films. Films with thickness < 1 μm were prepared with different Cu/In ratios to vary the electrical properties. The surface recombination velocity was least for Cu-rich films (5 × 10⁵ cm/s for CuInS₂, 1 × 10³ cm/s for CuInSe₂), while stoichiometric films exhibited high mobility (0.6 cm²/V s for CuInS_2, 32 cm²/V s for CuInSe₂) and high minority carrier lifetime (0.35 µs for CuInS₂, 12 µs for CuInSe₂).