Large Ti-doped sapphire single crystals grown by the kyropoulos technique for petawatt power laser application

Large diameter Ti-doped sapphire single crystals were grown by the Kyropoulos technique. The optical characterizations (luminescence, transmittance, evaluation of the FOM) of these bulk crystals are presented. The presented results are promising for the growth of large Ti-doped sapphire crystals by Kyroupolos technology for petawatt scale amplifier.     

Qualitative and quantitative bubbles defects analysis in undoped and Ti-doped sapphire crystals grown by Czochralski technique

Small bubbles can be observed in both sapphire and Ti-sapphire bulk crystals grown by Czochralski technique (Cz). Various thickness of wafers cut from the grown ingots were studied by optical microscopy. Bubbles distribution has different regulation in sapphire and Ti-sapphire crystals. All bubbles are spherical and have a diameter range from 2 μm to 5 μm in sapphire crystals while 10–45 μm in Ti-doped sapphire crystals. Some adjacent bubbles congregated into defects present various sizes and shape. The bubbles density increases as a function of pulling rate and rotation rate. The effect of bubbles on optical characterizations of Ti-sapphire crystals has been studied.     

Electrochromic Properties of Sputtered Ti-Doped WO3 Films

Ti-doped WO3 films were prepared by the mid-frequency dual-target magnetron sputtering method. The structure and electrochromic properties of the Ti-doped WO3 films were analysed by X-Ray diffraction （XRD）, Raman spectroscopy, spectrophotometer, cyclic chronoam- perometry and atomic force microscopy （AFM）. The results indicate that the erystallinity decrease after the doping of titanium, the channels for ion injection and extraction increase, the responding speed with 5.1% titanium doped becomes faster, and its circle life increases more than four times compared with the undoped WO3 film. In the coloured state, the W-O-W bonds decrease, but the W = O bonds increase. Since the W-O-W bonds break down for Li＋ ions＇ injection and more W = O bonds form, it is more convenient to inject Li＋ ions into the Ti-doped film than undoped film because more W-O-W bonds break down in the coloured state.     

准分子激光对钛宝石辐照作用的研究

采用波长为193 nm的ArF准分子激光对钛宝石进行辐照,对比辐照前后的吸收光谱,218 nm处的吸收增加幅度明显大于193 nm和266 nm的吸收峰.通过对不同品质因素(FOM)值样品在420 nm处的荧光强度检测,发现FOM值随荧光强度减小而增大,对比钛宝石样品在准分子激光辐照前后的420 nm荧光谱,可以发现荧光强度明显降低.在检测样品的电子顺磁共振(EPR)谱后发现,Ti3 离子的电子顺磁共振信号在辐照后强度明显增强.表明钛宝石在准分子激光辐照过程中有Ti4 离子向Ti3 离子转变趋势.     

不同Ti靶电流对Ti掺杂类石墨碳膜的结构和性能的影响(英文)

利用磁控溅射的方法成功制备Ti掺杂类石墨碳(Ti-GLC)膜。采用拉曼光谱、X射线光电子谱(XPS)、扫描电子显微镜(SEM)、原子力显微镜(AFM)、纳米压痕仪和球盘式摩擦机分别表征不同Ti靶电流下制备的Ti-GLC膜的成分、结构和性能。随着Ti靶电流的增加,薄膜中sp2键的比率和Ti含量增加,同时薄膜的硬度和内应力也增大,但较高的Ti靶电流将会促使薄膜产生鳞片状结构从而使其变疏松。较少的Ti掺入量可以降低GLC膜的干摩擦因数,纯GLC膜在水润滑条件下的摩擦因数最低。在较低Ti靶电流下制备的Ti-GLC膜在干摩擦及水润滑条件下均具有较高的抗磨性能。     

Ti掺杂及Ti应力缓和层对类金刚石薄膜附着力的影响

研究了Ti掺杂对磁控溅射类金刚石(DLC)薄膜附着力及硬度的影响,同时在Ti掺杂类金刚石(Ti-DLC)薄膜的基础上,通过引入Ti应力缓和层制备了Ti/Ti-DLC/Ti/Ti-DLC……软硬交替多层薄膜,研究了Ti应力缓和层对进一步提高薄膜附着力特性的作用.采用纳米划痕仪和显微硬度计分析测试了薄膜的附着力和硬度.研究表明,金属Ti的掺杂有利于DLC薄膜附着力特性的改善,但对硬度有一定的影响.Ti应力缓和层的导入进一步改善了Ti-DLC薄膜的附着力特性,使其达到或超过了TiN薄膜的水平,对于附着力的改善Ti应力缓和层存在最佳的厚度值.采用特殊的变周期多层结构设计即在应力集中的膜基界面附近采用较小的调制周期,薄膜项层附近采用较大的调制周期不但可以保持足够的附着力,还可维持Ti-DLC薄膜原有的硬度.     

2种不同激光对钛宝石辐照作用的研究

分别采用波长为193 nm的ArF准分子激光与波长为800 nm、脉冲宽度为120 fs的飞秒激光对温梯法生长的钛宝石进行辐照,并对辐照前后的吸收谱、荧光谱及电子顺磁共振(EPR)谱进行了检测。2种不同辐照的结果表明:218 nm及266 nm吸收峰并不是完全由同一种色心所引起的。通过对比不同品质因数(FOM)值的钛宝石样品在420 nm处的荧光谱,发现准分子激光辐照后420 nm处荧光强度降低,表明样品中Ti~(4 )离子浓度降低。而在飞秒激光辐照下荧光强度增大,即Ti~(4 )浓度增大。根据2种激光的波长,功率密度及辐照方式的差异对于2种辐照产生不同结果做出了解释。     

Enhanced optoelectronic properties of Ti-doped ZnO nanorods for photodetector applications

We report the effect of Ti-doping on structural, morphological, photoluminescence, optical and photoconductive properties of ZnO thin films. Pure and Ti(1, 3 and 5%)-doped ZnO thin films are deposited by the successive ionic layer adsorption and reaction (SILAR) method. The X-ray diffraction analysis revealed the single-phase hexagonal wurtzite ZnO structure of all the films. Scanning electron microscope images suggest the formation of rod shaped particles in Ti-doped ZnO thin films. Photoluminescence spectra of all the films show emission peaks centered at 398 nm, 413 nm, 438 nm, 477 nm and 522 nm wavelengths. Optical properties support the semiconducting nature of all the films. The optical bandgap values are estimated to be 3.29 eV, 3.26 eV, 3.19 eV and 3.23 eV for ZnO, ZnO:Ti(1%), ZnO:Ti(3%) and ZnO:Ti(5%) thin films, respectively. Photoconductivity study indicates that ZnO:Ti(3%) thin film exhibits high responsivity, external quantum efficiency and detectivity of 0.30 AW^-1, 97% and 5.49 × 10¹⁰ Jones, respectively, among all the films. The enhanced photoconductivity of Ti-doped ZnO thin films make them useful for optoelectronic applications.     

双弯管磁过滤阴极真空弧技术沉积超厚多层钛掺杂类金刚石膜

极端工况对关键部件涂层的性能要求较高,作为常用涂层,薄类金刚石(Diamond-like carbon,DLC)膜因其厚度的局限性已不能满足日益增长的性能需求,因此超厚DLC膜的制备工艺具有较大的现实意义。采用双弯管磁过滤阴极真空弧沉积技术制备多层Ti掺杂DLC膜,并通过显微维氏硬度计、摩擦磨损试验仪、场发射扫描电子显微镜(FESEM)、能谱仪(EDS)、透射电子显微镜(TEM)、X光电子能谱仪(XPS)、X射线衍射仪(XRD)、拉曼光谱仪(Raman)等对膜的结构和性能进行表征。结果表明:薄膜的沉积速率最高可达0.40μm/min;随着沉积过程中C2H2流量的增加,Ti掺杂DLC膜中超硬Ti C相的相对含量降低,因此导致膜硬度降低,同时热稳定性变差;通过金属掺杂以及多层复合结构的方法能够有效制备低内应力的DLC膜,同时实现超厚DLC膜(最高可达42.3μm)的制备。     

Investigation of Ti-doped Gd2O3 charge trapping layer with HfO2 blocking oxide for memory application

In this study, Ti-doped gadolinium oxide (Gd₂TiO₅) is investigated by X-ray diffraction, atomic force microscopy, and capacitance voltage curves (C-V) as the charge trapping layer in metal-oxide-high-k material-oxide-silicon structure memories. It was found that the Gd₂TiO₅ charge-trapping layer with an HfO₂ blocking layer annealed at 900 °C had a larger window of 4.8 V in the C-V hysteresis loop, a faster program/erase speed and good retention without significant drift up to 10⁴ cycles. This excellent performance was attributed to the well-crystallized Gd₂TiO₅ structure and the higher probability of charges being trapped in the deep trap energy level of the Gd₂TiO_5. This Gd₂TiO₅ memory device with post-annealing shows considerable promise for use in future flash memory applications.